Results 181 to 190 of about 12,742 (221)

Reliability of Industrial grade Embedded-STT-MRAM

2020 IEEE International Reliability Physics Symposium (IRPS), 2020
Robust reliability of industrial grade (Tj: -40~125°C) was successfully demonstrated. The reliability items such as HTOL, retention and endurance test showed negligible fail bit count changes with ECC off mode even after accelerated stress conditions for 10yr user life time and come to zero with ECC on mode.
Yongsung Ji, Hyunjae Goo, Jungman Lim, Tae-Young Jeong, Taiki Uemura, Gun Rae Kim, Boil Seo, Seungbae Lee, Goeun Park, Jeongmin Jo, Sang-Il Han, Kilho Lee, Junghyuk Lee, Sohee Hwang, Daesop Lee, Suksoo Pyo, Hyun Taek Jung, Shinhee Han, Seungmo Noh, Kiseok Suh, Sungyoung Yoon, Hyeonwoo Nam, Hyewon Hwang, Hai Jiang 0005, J. W. Kim, D. Kwon, Yoonjong Song, K. H. Koh, Hwasung Rhee, Sangwoo Pae, E. Lee   +30 more
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STT MRAM patterning challenges

SPIE Proceedings, 2013
In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive- Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented.
Werner Boullart, Dunja Radisic, Vasile Paraschiv, Sven Cornelissen, Mauricio Manfrini, Koichi Yatsuda, Eiichi Nishimura, Tetsuya Ohishi, Shigeru Tahara   +8 more
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Reliability of STT-MRAM for various embedded applications

2021 IEEE International Reliability Physics Symposium (IRPS), 2021
Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame ...
Shinhee Han, Junghyuk Lee, Kiseok Suh, Kyungtae Nam, Daeeun Jeong, Sechung Oh, Sohee Hwang, Yongsung Ji, Kilho Lee, Kangho Lee, Yoonjong Song, Yeongki Hong, Gitae Jeong   +12 more
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Write-optimized reliable design of STT MRAM

Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design, 2012
Spin transfer torque magnetic random access memory (STT MRAM) is a promising non-volatile memory due to its outstanding potential for high integration density and excellent scalability. Despite the attractive features, high write current and power is still a major challenge. As a result, the optimization of the memory for write is critical.In this work,
Yusung Kim 0002, Sumeet Kumar Gupta, Sang Phill Park, Georgios Panagopoulos, Kaushik Roy 0001   +4 more
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Etching Methods for STT-MRAM

ECS Meeting Abstracts, 2017
Spin-transfer torque [1] MRAM (STT-MRAM) continues to be the subject of intense investigation due to its scalability and excellent endurance. Initially explored mainly as a DRAM replacement, STT-MRAM with perpendicularly magnetized materials is now targeted as a nonvolatile memory, medium-performance replacement for mobile applications, and more long
E. J. O'Sullivan, Anthony J Annunziata, Jemima Gonsalves, G. Hu, Eric A Joseph, Raman Kothandaraman, Gen Lauer, Nathan Marchack, J. J. Nowak, R. P. Robertazzi, J. Z. Sun, Thitima Suwannasiri, P. L. Trouilloud, Yu Zhu, D. C. Worledge   +14 more
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Test challenges in embedded STT-MRAM arrays

2017 18th International Symposium on Quality Electronic Design (ISQED), 2017
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging memory technology which exhibits non-volatility, high density and nanosecond read and write times. These attributes of STT-MRAM make it suitable for last level embedded caches.
Insik Yoon, Arijit Raychowdhury
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FPGA Implementation of A Hybrid Decoder for STT-MRAM

2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2018
Process variation and random thermal fluctuation severely affect the reliability of spin-torque transfer magnetic random access memory (STT-MRAM). This paper presents an FPGA-based two-stage hybrid decoder of extended Hamming codes for STT-MRAM with less decoding latency and lower implementation complexity.
Xue Liu, Kui Cai 0001, Zhen Mei 0001
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STT-MRAM for Embedded Memory Applications

2020 IEEE International Memory Workshop (IMW), 2020
With traditional embedded memories, such as eFlash and SRAM, facing major challenge of scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies as the preferred technology for both embedded flash and SRAM replacements. Having high data retention, reflow compatibility and high endurance, MRAM is ready for production to replace ...
Zihui Wang, Xiaojie Hao, Pengfa Xu, Longqian Hu, Dongha Jung, Woojin Kim, Kimihiro Satoh, Bing Yen, Zhiqiang Wei, Lienchang Wang, Jing Zhang, Yiming Huai   +11 more
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Read disturbance issue for nanoscale STT-MRAM

2015 IEEE Non-Volatile Memory System and Applications Symposium (NVMSA), 2015
Spin transfer torque magnetic random access memory (STT-MRAM) has been widely considered as one of the most promising candidates for the next-generation nonvolatile memory technologies, thanks to its attractive features, including high density, high speed, low power and high endurance etc.
Yi Ran, Wang Kang 0001, Youguang Zhang, Jacques-Olivier Klein, Weisheng Zhao 0001   +4 more
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28nm STT-MRAM Array and Sense Amplifier

2019 8th International Conference on Modern Circuits and Systems Technologies (MOCAST), 2019
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a replacement for currently used embedded non-volatile memory. We describe the characteristics of STT-MRAM and explore aspects of the memory array including trade-off in size, switching, read speed, temperature effects, layout, and power consumption.
Jin Woong Kwak, Andrew Marshall, Harvey Stiegler   +2 more
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