Results 1 to 10 of about 3,221 (210)
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +2 more sources
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj +2 more sources
Improving MRAM Performance with Sparse Modulation and Hamming Error Correction [PDF]
SensorsWith the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le +3 more
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Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]
SensorsAsymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
doaj +2 more sources
IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
doaj +1 more source
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
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Randomness and Noise in Information Systems [PDF]
, 2013 This dissertation is devoted to the study of randomness and noise in a number of information systems including computation systems, storage systems, and natural paradigms like molecular systems, where randomness plays important and distinct roles ...
Zhou, Hongchao
core +1 more source
Coding Assisted Methods for Crossbar Resistive Memory [PDF]
, 2021 Living in the era of big-data, it is crucial to store vast amounts of data and process them quickly. Resistive random-access memory (ReRAM) with the crossbar structure is one promising candidate to be used as the next generation non-volatile memory ...
Chen, Zehui
core
FEBS Open Bio, EarlyView.Unique biological samples, such as site‐specific mutant proteins, are available only in limited quantities. Here, we present a polarization‐resolved transient infrared spectroscopy setup with referencing to improve signal‐to‐noise tailored towards tracing small signals. We provide an overview of characterizing the excitation conditions for polarization‐
Clark Zahn, Karsten Heyne
wiley +1 more source