Results 1 to 10 of about 7,553,652 (107)
Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]
SensorsAsymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
doaj +2 more sources
Improving MRAM Performance with Sparse Modulation and Hamming Error Correction [PDF]
SensorsWith the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le +3 more
doaj +2 more sources
Neural network detector with sparse codes for spin transfer torque magnetic random access memory
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj +1 more source
IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
doaj +1 more source
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj +1 more source
On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj +1 more source
IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
doaj +1 more source
Adaptive Error-Correction Coding for Joint Energy and Reliability Optimization in STT-MRAM
IEEE AccessThis paper proposes a concatenated coding framework that combines Bose–Chaudhuri–Hocquenghem (BCH) coding with sparse coding to improve the reliability and energy efficiency of spin-transfer torque magnetic random access memory (STT-MRAM ...
Thanh-Loc Nguyen-Van +2 more
doaj +1 more source
A Persistent Multi-User Virtual Reality Garden: Architecture, Traceability, and Technical Validation
Multimodal Technologies and InteractionVirtual reality (VR) applications are often designed as episodic experiences, with limited support for persistence, longitudinal revisitation, and structured integration of interaction data across sessions.
Giovanni Giuliodori +3 more
doaj +1 more source
Some of the next articles are maybe not open access.
Asymmetric Focused-Ion-Beam Trimming of Longitudinal and Perpendicular Write Heads
IEEE Transactions on Magnetics, 2003P A A van der Heijden
exaly +2 more sources