Neural network detector with sparse codes for spin transfer torque magnetic random access memory [PDF]
Cogent Engineering, 2023 This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
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Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory [PDF]
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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Improving MRAM Performance with Sparse Modulation and Hamming Error Correction [PDF]
SensorsWith the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le +3 more
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Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel [PDF]
SensorsAsymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
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IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory
IEEE Access, 2021 A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
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IEEE Access, 2019 Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei +3 more
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Modeling the association between illiteracy and poverty in Egypt: a comparative analysis of linear regression and ARDL approaches. [PDF]
Sci RepAlsebai Mohamed MM, Mohamed A.
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PPG-basis: A python-based toolbox for fast photoplethysmogram decomposition and reconstruction. [PDF]
Comput Methods Programs BiomedPutcha A +7 more
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Weighted Chernoff Information and Optimal Loss Exponent in Context-Sensitive Hypothesis Testing. [PDF]
Entropy (Basel)Kelbert M, Kalimulina EY.
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