Results 1 to 10 of about 30 (30)

Neural network detector with sparse codes for spin transfer torque magnetic random access memory

open access: yesCogent Engineering, 2023
This paper presents leveraging the neural network detector to improve the performance of a spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse coding scheme is also applied to protect the user data for the asymmetric write ...
Chi Dinh Nguyen
doaj   +1 more source

Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2023
Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

On the Design of 7/9-Rate Sparse Code for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2021
A design of 7/9-rate sparse code for spin-torque transfer magnetic random access memory (STT-MRAM) is proposed in this work. The STT-MRAM using spin-polarized current through magnetic tunnel junction (MTJ) to write data is one of the most promising ...
Chi Dinh Nguyen
doaj   +1 more source

Design of Rate-Compatible Protograph LDPC Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

open access: yesIEEE Access, 2019
Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile ...
Zhong Xingwei   +3 more
doaj   +1 more source

Improving MRAM Performance with Sparse Modulation and Hamming Error Correction

open access: yesSensors
With the rise of the Internet of Things (IoT), smart sensors are increasingly being deployed as compact edge processing units, necessitating continuously writable memory with low power consumption and fast access times.
Nam Le   +3 more
doaj   +1 more source

Joint Optimization of Codeword Bit Distribution and Detection Threshold for Asymmetric STT-MRAM Channel

open access: yesSensors
Asymmetric error characteristics in spin-transfer torque magnetic random-access memory (STT-MRAM), particularly the imbalance between logical ‘0’ and ‘1’ error probabilities, can significantly degrade system reliability under conventional modulation and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Adaptive Error-Correction Coding for Joint Energy and Reliability Optimization in STT-MRAM

open access: yesIEEE Access
This paper proposes a concatenated coding framework that combines Bose–Chaudhuri–Hocquenghem (BCH) coding with sparse coding to improve the reliability and energy efficiency of spin-transfer torque magnetic random access memory (STT-MRAM ...
Thanh-Loc Nguyen-Van   +2 more
doaj   +1 more source

A Persistent Multi-User Virtual Reality Garden: Architecture, Traceability, and Technical Validation

open access: yesMultimodal Technologies and Interaction
Virtual reality (VR) applications are often designed as episodic experiences, with limited support for persistence, longitudinal revisitation, and structured integration of interaction data across sessions.
Giovanni Giuliodori   +3 more
doaj   +1 more source
Some of the next articles are maybe not open access.

Asymmetric Write Error Rate Caused by Self-Heating-Induced Offset Field Shift in Spin-Orbit-Torque Magnetic Tunnel Junctions

IEEE Magnetics Letters
Kaiyuan Zhou   +5 more
openaire   +1 more source

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