Results 1 to 10 of about 10,351,284 (240)

ENTT/ENTTR: A Family of Improved Emerging NVM-Based Trojan Triggers and Resets

open access: yesFrontiers in Nanotechnology, 2022
Hardware Trojans in Integrated Circuits (ICs), that are inserted as hostile modifications in the design phase and/or the fabrication phase, are a security threat since the semiconductor manufacturing process is increasingly becoming globalized.
Karthikeyan Nagarajan   +2 more
doaj   +1 more source

A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories

open access: yesComputers, 2017
Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey
Sparsh Mittal
doaj   +1 more source

Improving Bit-Error-Rate Performance Using Modulation Coding Techniques for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2023
In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability

open access: yesJournal of Low Power Electronics and Applications, 2017
To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal   +2 more
doaj   +1 more source

A Novel Low Power and Reduced Transistor Count Magnetic Arithmetic Logic Unit Using Hybrid STT-MTJ/CMOS Circuit

open access: yesIEEE Access, 2020
One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one ...
Prashanth Barla   +2 more
doaj   +1 more source

Design of In-Memory Parallel-Prefix Adders

open access: yesJournal of Low Power Electronics and Applications, 2021
Computational methods in memory array are being researched in many emerging memory technologies to conquer the ‘von Neumann bottleneck’. Resistive RAM (ReRAM) is a non-volatile memory, which supports Boolean logic operation, and adders can be implemented
John Reuben
doaj   +1 more source

Shining light on devices: New perspectives in non-volatile memory device and material investigation [PDF]

open access: yesAPL Electronic Devices
Non-volatile memory (NVMe) technologies, including resistive random access memory (RAM), 2D memristors, and ferroelectric RAM, offer major improvements in data storage and computational systems.
Giuliana Di Martino   +2 more
doaj   +1 more source

Sparse Code With Minimum Hamming Distance of Three for Spin-Torque Transfer Magnetic Random Access Memory

open access: yesIEEE Access, 2023
Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
doaj   +1 more source

Word and bit line operation of a 1 × 1 μm2 superconducting vortex-based memory

open access: yesNature Communications, 2023
The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained.
Taras Golod   +2 more
doaj   +1 more source

Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing

open access: yesJournal of Low Power Electronics and Applications, 2020
As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing
John Reuben
doaj   +1 more source

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