Results 21 to 30 of about 12,905 (282)
IEEE Access, 2023 In non-volatile random-access memory (RAM) technologies, the spin-torque transfer magnetic random-access memory (STT-MRAM) is a promising candidate. STT-MRAM has attracted attention owing to its advantages, such as a high density, high endurance, and ...
Thien An Nguyen, Jaejin Lee
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DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability
Journal of Low Power Electronics and Applications, 2017 To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal +2 more
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RAM function is dependent on Kapβ2-mediated nuclear entry [PDF]
, 2014 Eukaryotic gene expression is dependent on the modification of the first transcribed nucleotide of pre-mRNA by the addition of the 7-methylguanosine cap.
Gonatopoulos-Pournatzis, Thomas +1 more
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IEEE Access, 2020 One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one ...
Prashanth Barla +2 more
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Design of In-Memory Parallel-Prefix Adders
Journal of Low Power Electronics and Applications, 2021 Computational methods in memory array are being researched in many emerging memory technologies to conquer the ‘von Neumann bottleneck’. Resistive RAM (ReRAM) is a non-volatile memory, which supports Boolean logic operation, and adders can be implemented
John Reuben
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Shining light on devices: New perspectives in non-volatile memory device and material investigation [PDF]
APL Electronic DevicesNon-volatile memory (NVMe) technologies, including resistive random access memory (RAM), 2D memristors, and ferroelectric RAM, offer major improvements in data storage and computational systems.
Giuliana Di Martino +2 more
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IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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Word and bit line operation of a 1 × 1 μm2 superconducting vortex-based memory
Nature Communications, 2023 The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained.
Taras Golod +2 more
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Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing
Journal of Low Power Electronics and Applications, 2020 As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing
John Reuben
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A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM
IEEE Access, 2018 Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures.
He Zhang +4 more
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