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Shining light on devices: New perspectives in non-volatile memory device and material investigation [PDF]
APL Electronic DevicesNon-volatile memory (NVMe) technologies, including resistive random access memory (RAM), 2D memristors, and ferroelectric RAM, offer major improvements in data storage and computational systems.
Giuliana Di Martino +2 more
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IEEE Access, 2023 Spin-torque-transfer magnetic random access memory (STT-MRAM) has recently emerged as a promising technology to replace dynamic random access memory (DRAM).
Thien An Nguyen, Jaejin Lee
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Word and bit line operation of a 1 × 1 μm2 superconducting vortex-based memory
Nature Communications, 2023 The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained.
Taras Golod +2 more
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Rediscovering Majority Logic in the Post-CMOS Era: A Perspective from In-Memory Computing
Journal of Low Power Electronics and Applications, 2020 As we approach the end of Moore’s law, many alternative devices are being explored to satisfy the performance requirements of modern integrated circuits. At the same time, the movement of data between processing and memory units in contemporary computing
John Reuben
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A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM
IEEE Access, 2018 Spin transfer torque-random access memory (STT-RAM) has recently been regarded as one of the most promising non-volatile memory candidates for the next-generation computer architectures.
He Zhang +4 more
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HOPE: Holistic STT-RAM Architecture Exploration Framework for Future Cross-Platform Analysis
IEEE AccessSpin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies.
Saeed Seyedfaraji +3 more
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IEEE Access, 2021 Monolithic 3D (M3D) integration has been emerged as a promising technology for fine-grained 3D stacking. As the M3D integration offers extremely small dimension of via in a nanometer-scale, it is beneficial for small microarchitectural blocks such as ...
Young-Ho Gong
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Design and Evaluation of a 28-nm FD-SOI STT-MRAM for Ultra-Low Power Microcontrollers
IEEE Access, 2019 The complexity of embedded devices increases as today's applications request always more services. However, the power consumption of systems-on-chip has significantly increased due to the high-density integration and the high leakage power of current ...
Guillaume Patrigeon +5 more
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NVPE: An FPGA-Based Non-Volatile Processor Emulator for Intermittent Computing
ProceedingsResearch on novel memory storage devices that occupy less physical area and are compatible with CMOS processes, such as resistive RAM, has led to the interesting study of non-volatile compute memories and devices.
Idris Somoye, Kevin Yang
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IET Computers & Digital Techniques, 2021 As a promising alternative to dynamic RAM, phase change memory (PCM) suffers from limited write endurance. Therefore, many research proposals on PCM security or reliability have focussed on the possible threat of wear‐out attacks from malicious ...
Xianzhong Zhou, Ying Wang
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