Results 1 to 10 of about 241 (114)

EnTiered-ReRAM: An Enhanced Low Latency and Energy Efficient TLC Crossbar ReRAM Architecture [PDF]

open access: yesIEEE Access, 2021
Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures.
Yang Zhang   +4 more
doaj   +2 more sources

XB-SIM∗: A simulation framework for modeling and exploration of ReRAM-based CNN acceleration design

open access: yesTsinghua Science and Technology, 2021
Resistive Random Access Memory (ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance.
Youhui Zhang, Weimin Zheng
exaly   +3 more sources

The Role of Hydrogen in ReRAM

open access: yesAdvanced Materials
AbstractPrevious research on transistor gate oxides reveals a clear link between hydrogen content and oxide breakdown. This has implications for redox‐based resistive random access memory (ReRAM) devices, which exploit soft, reversible, dielectric breakdown, as hydrogen is often not considered in modeling or measured experimentally.
Horatio Cox   +2 more
exaly   +5 more sources

TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing

open access: yesNanomaterials
This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Jonghwan Lee
exaly   +3 more sources

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

open access: yesAdvanced Electronic Materials, 2023
A hole‐type vertical structure is adopted to fabricate a vertically stacked resistive switching random access memory (ReRAM) array. The vertical configuration is more advantageous in lowering the process cost and increasing integration density than the ...
Seung Soo Kim   +7 more
doaj   +1 more source

Conductance-Aware Quantization Based on Minimum Error Substitution for Non-Linear-Conductance-State Tolerance in Neural Computing Systems

open access: yesMicromachines, 2022
Emerging resistive random-access memory (ReRAM) has demonstrated great potential in the achievement of the in-memory computing paradigm to overcome the well-known “memory wall” in current von Neumann architecture.
Chenglong Huang   +4 more
doaj   +1 more source

Intrinsically Secure Non-Volatile Memory Using ReRAM Devices

open access: yesIEEE Access, 2022
The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan   +5 more
doaj   +1 more source

PEROVSKITES AND OTHER FRAMEWORK STRUCTURE CRYSTALLINE MATERIALS (BOOK' FIRST PAGES AND PREFACE)

open access: yesMaterials and Devices, 2021
Perovskites are among the most famous materials due to their exceptional properties: they present nearly all existing types of interesting properties, in particular as ferroics or multiferroics, they may be insulators, (super)conductors, or ...
Saint-Grégoire P., Smirnov M.
doaj   +1 more source

TRNGs from Pre-Formed ReRAM Arrays

open access: yesCryptography, 2021
Schemes generating cryptographic keys from arrays of pre-formed Resistive Random Access (ReRAM) cells, called memristors, can also be used for the design of fast true random number generators (TRNG’s) of exceptional quality, while consuming low levels of
Bertrand Cambou   +5 more
doaj   +1 more source

Nano-intrinsic security primitives with redox-based resistive memory

open access: yesFrontiers in Communications and Networks, 2022
Physical unclonable function (PUF) exploits advantages of otherwise undesirable non-idealities to create physical systems that are difficult to copy even with the same manufacturing process.
Jeeson Kim
doaj   +1 more source

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