Results 1 to 10 of about 134 (108)

A Relaxed Quantization Training Method for Hardware Limitations of Resistive Random Access Memory (ReRAM)-Based Computing-in-Memory [PDF]

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020
Nonvolatile computing-in-memory (nvCIM) exhibits high potential for neuromorphic computing involving massive parallel computations and for achieving high energy efficiency.
Wei-Chen Wei   +9 more
doaj   +2 more sources

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory

open access: yesMicromachines, 2022
With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that ...
Ricky Wenkuei Chuang   +2 more
doaj   +1 more source

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

open access: yesAdvanced Electronic Materials, 2023
A hole‐type vertical structure is adopted to fabricate a vertically stacked resistive switching random access memory (ReRAM) array. The vertical configuration is more advantageous in lowering the process cost and increasing integration density than the ...
Seung Soo Kim   +7 more
doaj   +1 more source

Conductance-Aware Quantization Based on Minimum Error Substitution for Non-Linear-Conductance-State Tolerance in Neural Computing Systems

open access: yesMicromachines, 2022
Emerging resistive random-access memory (ReRAM) has demonstrated great potential in the achievement of the in-memory computing paradigm to overcome the well-known “memory wall” in current von Neumann architecture.
Chenglong Huang   +4 more
doaj   +1 more source

PRAP-PIM: A weight pattern reusing aware pruning method for ReRAM-based PIM DNN accelerators

open access: yesHigh-Confidence Computing, 2023
Resistive Random-Access Memory (ReRAM) based Processing-in-Memory (PIM) frameworks are proposed to accelerate the working process of DNN models by eliminating the data movement between the computing and memory units.
Zhaoyan Shen   +5 more
doaj   +1 more source

High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

open access: yesNanomaterials, 2021
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar   +5 more
doaj   +1 more source

A Reconfigurable 4T2R ReRAM Computing In-Memory Macro for Efficient Edge Applications

open access: yesIEEE Open Journal of Circuits and Systems, 2021
Resistive random access memory (ReRAM)-based computing in-memory (CIM) is a promising solution to overcome the von-Neumann bottleneck in conventional computing architectures. We propose a reconfigurable ReRAM architecture using a novel 4T2R bit-cell that
Yuzong Chen   +3 more
doaj   +1 more source

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

open access: yesIEEE Access, 2022
In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices.
Golnaz Korkian   +9 more
doaj   +1 more source

A Fully Integrated System‐on‐Chip Design with Scalable Resistive Random‐Access Memory Tile Design for Analog in‐Memory Computing

open access: yesAdvanced Intelligent Systems, 2022
As the demands of big data applications and deep learning continue to rise, the industry is increasingly looking to artificial intelligence (AI) accelerators.
Fuxi Cai   +10 more
doaj   +1 more source

Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing

open access: yesNanoscale Research Letters, 2022
Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and
Kannan Udaya Mohanan   +2 more
doaj   +1 more source

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