Results 21 to 30 of about 15,800,744 (205)
Resistive-RAM-Based In-Memory Computing for Neural Network: A Review
, 2022 Processing-in-memory (PIM) is a promising architecture to design various types of neural network accelerators as it ensures the efficiency of computation together with Resistive Random Access Memory (ReRAM).
Zhi Qi +3 more
core +1 more source
Network-on-ReRAM for Scalable Processing-in-Memory Architecture Design
, 2021 The non-volatile metal-oxide resistive random access memory (ReRAM) is an emerging alternative for the current memory technologies. The unique capability of ReRAM to perform analog and digital arithmetic and logic operations has enabled this technology ...
Mehdi Modarressi +5 more
core +1 more source
APL Materials, 2021 The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices.
Horatio R. J. Cox +7 more
doaj +1 more source
, 2022 Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage.
Izzat Aziz +6 more
core +1 more source
Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application [PDF]
Ceramics International, 2020 Abstract Memory structures play a basic role in providing integrated circuits of powerful processing capabilities. Even most powerful processors have nothing to offer without an accompanying memory and importantly, the development of mobile devices is dependent on the continual improvement of memory technology. Herein, we report the synthesis of TiO2
Alsaiari, Mabkhoot +3 more
openaire +2 more sources
Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE Access, 2022 In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are ...
Nils Kopperberg +6 more
doaj +1 more source
Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013 Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (∼10 nm) oxide/suboxide heterostructures (e.g.
Elliman, Robert +7 more
openaire +3 more sources
Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM
Discrete Dynamics in Nature and Society, 2015 There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the ...
Peng Hai-yun, Zhou Wen-gang
doaj +1 more source
EnTiered-ReRAM: An Enhanced Low Latency and Energy Efficient TLC Crossbar ReRAM Architecture
IEEE Access, 2021 Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures.
Yang Zhang +4 more
doaj +1 more source
Surface-Controlled Metal Oxide Resistive Memory [PDF]
, 2015 To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied.
Duran Retamal, Jose Ramon +9 more
core +1 more source