Growth of amorphous, anatase and rutile phase TiO2 thin films on Pt/TiO2/SiO2/Si (SSTOP) substrate for resistive random access memory (ReRAM) device application [PDF]
Ceramics International, 2020 Abstract Memory structures play a basic role in providing integrated circuits of powerful processing capabilities. Even most powerful processors have nothing to offer without an accompanying memory and importantly, the development of mobile devices is dependent on the continual improvement of memory technology. Herein, we report the synthesis of TiO2
Alsaiari, Mabkhoot +3 more
openaire +2 more sources
Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM
Discrete Dynamics in Nature and Society, 2015 There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the ...
Peng Hai-yun, Zhou Wen-gang
doaj +1 more source
Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE Access, 2022 In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are ...
Nils Kopperberg +6 more
doaj +1 more source
Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013 Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (∼10 nm) oxide/suboxide heterostructures (e.g.
Elliman, Robert +7 more
openaire +3 more sources
Insulator Metal Transition-Based Selector in Crossbar Memory Arrays
Electronic MaterialsThis article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology.
Mahmoud Darwish, László Pohl
doaj +1 more source
EnTiered-ReRAM: An Enhanced Low Latency and Energy Efficient TLC Crossbar ReRAM Architecture
IEEE Access, 2021 Resistive Random Access Memory (ReRAM) is promising to be employed as high density storage-class memory due to its crossbar array and Triple-Level Cell (TLC) structures.
Yang Zhang +4 more
doaj +1 more source
Stable switching of resistive random access memory on the nanotip array electrodes [PDF]
, 2016 The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external ...
Ke, Jr-Jian +6 more
core +1 more source
ARIA: Additive ReRAM-Based Integrity and Aging Monitoring for ICs
IEEE AccessThis paper reports an approach for monitoring aging and integrity of CMOS circuits through additively manufactured Resistive Random-Access Memory (ReRAM) based test structures.
Thomas Schultz +3 more
doaj +1 more source
ReGra: Accelerating Graph Traversal Applications Using ReRAM With Lower Communication Cost
IEEE Access, 2020 There is a growing gap between data explosion speed and the improvement of graph processing systems on conventional architectures. The main reason lies in the large overhead of random access and data movement, as well as the unbalanced and unordered ...
Haoqiang Liu +3 more
doaj +1 more source
Hybrid flexible resistive random access memory-gated transistor for novel nonvolatile data storage
, 2016 Here, a single‐device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch ...
Sun, Qijun +9 more
core +1 more source