Results 1 to 10 of about 15,800,199 (248)

Conductance Quantization in Resistive Random Access Memory [PDF]

open access: yesNanoscale Research Letters, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory.
Li, Yang   +8 more
openaire   +5 more sources

Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]

open access: yesAdvanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi   +3 more
doaj   +3 more sources

Recent Advances in Flexible Resistive Random Access Memory

open access: yesApplied System Innovation, 2022
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang   +9 more
doaj   +2 more sources

On the Thermal Models for Resistive Random Access Memory Circuit Simulation [PDF]

open access: yesNanomaterials, 2021
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware ...
Juan B. Roldán   +13 more
doaj   +6 more sources

Recent advances in resistive random access memory based on lead halide perovskite

open access: yesInfoMat, 2021
Lead halide perovskites have attracted increasing attention in photovoltaic devices, light‐emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the
Jiayu Di   +5 more
doaj   +2 more sources

A compute-in-memory chip based on resistive random-access memory [PDF]

open access: yesNature, 2022
Abstract Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM) 1 promises to meet such demand by ...
Weier Wan   +13 more
openaire   +4 more sources

Overview of radiation effects on emerging non-volatile memory technologies [PDF]

open access: yesNuclear Technology and Radiation Protection, 2017
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S.   +3 more
doaj   +1 more source

Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

open access: yesMolecules, 2021
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid ...
Jin Mo Kim, Sung Won Hwang
doaj   +1 more source

Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

open access: yesMaterials Research Express, 2021
In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim   +8 more
doaj   +1 more source

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

open access: yesIEEE Access, 2021
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku   +4 more
doaj   +1 more source

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