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On the Thermal Models for Resistive Random Access Memory Circuit Simulation [PDF]

open access: yesNanomaterials, 2021
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware ...
Juan B. Roldán   +13 more
doaj   +8 more sources

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory [PDF]

open access: yesNanoscale Research Letters, 2019
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding   +4 more
doaj   +3 more sources

Conductance Quantization in Resistive Random Access Memory. [PDF]

open access: yesNanoscale Res Lett, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM ...
Li Y   +8 more
europepmc   +7 more sources

A Collective Study on Modeling and Simulation of Resistive Random Access Memory [PDF]

open access: yesNanoscale Research Letters, 2018
In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working ...
Debashis Panda   +2 more
doaj   +5 more sources

Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory [PDF]

open access: yesMolecules, 2021
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid ...
Jin Mo Kim, Sung Won Hwang
doaj   +2 more sources

Recent Advances in Flexible Resistive Random Access Memory

open access: yesApplied System Innovation, 2022
Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and
Peng Tang   +9 more
doaj   +2 more sources

Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network [PDF]

open access: yesSensors, 2023
Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture.
Hyunho Seok   +4 more
doaj   +2 more sources

Research progress in flexible resistive random access memory materials

open access: yesCailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu   +9 more
doaj   +2 more sources

Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]

open access: yesAdvanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi   +3 more
doaj   +2 more sources

Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory [PDF]

open access: yesNanomaterials, 2020
In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture.
Hyojong Cho, Sungjun Kim
doaj   +2 more sources

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