Results 11 to 20 of about 14,908,555 (316)

In Memory Energy Application for Resistive Random Access Memory

Advanced Electronic Materials, 2021
AbstractThis work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next‐generation memory, thanks to its promising performances in terms of scalability and CMOS process ...
Trotti, Paola, Oukassi, Sami, Molas, Gabriel, Bernard, Mathieu, Aussenac, François, Pillonnet, Gaël   +5 more
semanticscholar   +4 more sources

Conductance Quantization in Resistive Random Access Memory [PDF]

Nanoscale Research Letters, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory.
Li, Yang, Long, Shibing, Liu, Yang, Hu, Chen, Teng, Jiao, Liu, Qi, Lv, Hangbing, Suñé, Jordi, Liu, Ming   +8 more
europepmc   +6 more sources

Research progress in flexible resistive random access memory materials

Cailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei   +9 more
doaj   +2 more sources

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications [PDF]

Nanoscale Res Lett, 2020
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor, Tun Zainal Azni Zulkifli, F. A. Khanday   +2 more
semanticscholar   +2 more sources

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

IEEE Access, 2021
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku, Mohd Haris Bin Md Khir, I. Md Nawi, M. A. Zakariya, Furqan Zahoor   +4 more
doaj   +2 more sources

Short-Term Memory Dynamics of TiN/Ti/TiO₂/SiO_x/Si Resistive Random Access Memory [PDF]

Nanomaterials, 2020
In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture.
Hyojong Cho, Sungjun Kim
doaj   +2 more sources

Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Materials Research Express, 2021
In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang, Jaewon Jang   +8 more
doaj   +2 more sources

Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]

Advanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi, Jiangxin Wang, Izzat Aziz, Pooi See Lee   +3 more
doaj   +3 more sources

All Nonmetal Resistive Random Access Memory [PDF]

Scientific Reports, 2019
AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen, Te Jui, Gismatulin, Andrei, Volodin, Vladimir, Gritsenko, Vladimir, Chin, Albert   +4 more
openaire   +3 more sources

Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

Materials Research Express, 2022
We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park, Sobia Ali Khan, Mehr Khalid Rahmani, Jihwan Cho, Moon Hee Kang   +4 more
doaj   +2 more sources