Results 11 to 20 of about 3,876 (248)

Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]

Advanced Intelligent Systems, 2020
In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in
Qiuwei Shi, Jiangxin Wang, Izzat Aziz, Pooi See Lee   +3 more
doaj   +2 more sources

A compute-in-memory chip based on resistive random-access memory. [PDF]

Nature, 2022
AbstractRealizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM)1promises to meet such demand by storing AI model weights in dense, analogue and non-volatile RRAM devices, and by ...
Wan W, Kubendran R, Schaefer C, Eryilmaz SB, Zhang W, Wu D, Deiss S, Raina P, Qian H, Gao B, Joshi S, Wu H, Wong HP, Cauwenberghs G.   +13 more
europepmc   +5 more sources

Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory

Materials Research Express, 2021
In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim, Woongki Hong, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Hyuk-Jun Kwon, Hongki Kang, Jaewon Jang   +8 more
doaj   +1 more source

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

IEEE Access, 2021
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku, Mohd Haris Bin Md Khir, I. Md Nawi, M. A. Zakariya, Furqan Zahoor   +4 more
doaj   +1 more source

All Nonmetal Resistive Random Access Memory. [PDF]

Sci Rep, 2019
AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen TJ, Gismatulin A, Volodin V, Gritsenko V, Chin A.   +4 more
europepmc   +4 more sources

In Memory Energy Application for Resistive Random Access Memory

Advanced Electronic Materials, 2021
AbstractThis work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next‐generation memory, thanks to its promising performances in terms of scalability and CMOS process ...
Trotti, Paola, Oukassi, Sami, Molas, Gabriel, Bernard, Mathieu, Aussenac, François, Pillonnet, Gaël   +5 more
openaire   +2 more sources

Conductance Quantization in Resistive Random Access Memory. [PDF]

Nanoscale Res Lett, 2015
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory.
Li Y, Long S, Liu Y, Hu C, Teng J, Liu Q, Lv H, Suñé J, Liu M.   +8 more
europepmc   +5 more sources

An overview of critical applications of resistive random access memory. [PDF]

Nanoscale Adv
The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits.
Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA.   +8 more
europepmc   +3 more sources

Research progress in flexible resistive random access memory materials

Cailiao gongcheng, 2020
The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu, LIU Jin-yun, WANG Yu-xin, SHANG Jie, LIU Gang, LIU Yi-wei, ZHANG Hui, CHEN Qing-ming, LIU Xiang, LI Run-wei   +9 more
doaj   +1 more source

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

Advanced Materials Interfaces, 2023
To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang, Taegyun Kim, Sunghun Kim, Sungjoon Kim, Tae‐Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho   +8 more
doaj   +1 more source