All Nonmetal Resistive Random Access Memory [PDF]
Scientific Reports, 2019 AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen, Te Jui +4 more
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Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Stefano Di Carlo +7 more
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Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching. [PDF]
PLoS ONE, 2016 Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM).
Adolfo Henrique Nunes Melo +1 more
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Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
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Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network
Sensors, 2023 Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture.
Hyunho Seok +4 more
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Bio-Organic based Resistive Switching Random-Access Memory
, 2023 A non-volatile memory is a solid-state device that can retain data even when power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things.
Cheong, Kuan Yew +2 more
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Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
Nanomaterials, 2016 ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai +5 more
doaj +1 more source
Glucose-based resistive random access memory for transient electronics
Journal of Information Display, 2019 In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park +3 more
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Memories - Materials, Devices, Circuits and Systems, 2023 Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored.
Shalu Saini +4 more
doaj +1 more source
Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays
APL Materials, 2018 Resistive random-access memories are promising analog synaptic devices for efficient bio-inspired neuromorphic computing arrays. Here we first describe working principles for phase-change random-access memory, oxide random-access memory, and conductive ...
Scott H. Tan +5 more
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