Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer.
Kena Zhang +5 more
doaj +2 more sources
Optimal Weight‐Splitting in Resistive Random Access Memory‐Based Computing‐in‐Memory Macros
Computing‐in‐memory (CIM) is considered a feasible solution to the acceleration of multiply‐accumulate (MAC) operations at low power. The key to CIM is parallel MAC operations in the memory domain, and thus reductions in power consumption and memory ...
Choongseok Song +2 more
doaj +2 more sources
High Performance All Nonmetal SiNx Resistive Random Access Memory with Strong Process Dependence [PDF]
All-nonmetal resistive random access memory (RRAM) with a N+–Si/SiNx/P+–Si structure was investigated in this study. The device performance of SiNx developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated ...
T. Yen, A. Chin, V. Gritsenko
semanticscholar +2 more sources
Scindapsus Aureus Resistive Random-Access Memory with Synaptic Plasticity and Sound Localization Function [PDF]
This work presents a memristive device based on a composite of Scindapsus aureus (SA) and gold nanoparticles (Au NPs), which exhibits excellent resistive switching characteristics and supports multiple forms of synaptic plasticity such as paired-pulse ...
Lu Wang +4 more
doaj +2 more sources
Resistive Random Access Memory (ReRAM) [PDF]
Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM.
Dayalan, Muthu
openaire +3 more sources
A Collective Study on Modeling and Simulation of Resistive Random Access Memory [PDF]
In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working ...
Debashis Panda +2 more
doaj +2 more sources
Low-power resistive random access memory by confining the formation of conducting filaments
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang +4 more
doaj +2 more sources
Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory [PDF]
Daewon Kim, Jonghyeon Yun
exaly +2 more sources
A comprehensive investigation of MoO3 based resistive random access memory. [PDF]
The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.
Fatheema J +6 more
europepmc +2 more sources
Overview of radiation effects on emerging non-volatile memory technologies [PDF]
In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S. +3 more
doaj +1 more source

