Results 21 to 30 of about 6,168 (289)
Remote control of resistive switching in TiO2 based resistive random access memory device. [PDF]
Sci Rep, 2017 We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics.
Sahu DP, Jammalamadaka SN.
europepmc +2 more sources
An overview of critical applications of resistive random access memory. [PDF]
Nanoscale AdvThe rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits.
Zahoor F +8 more
europepmc +3 more sources
All Nonmetal Resistive Random Access Memory. [PDF]
Sci Rep, 2019 AbstractTraditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si
Yen TJ +4 more
europepmc +4 more sources
Overview of radiation effects on emerging non-volatile memory technologies [PDF]
Nuclear Technology and Radiation Protection, 2017 In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access ...
Fetahović Irfan S. +3 more
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Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
Materials Research Express, 2021 In this study, sol–gel-processed amorphous-phase ZrO _2 was used as an active channel material to improve the resistive switching properties of resistive random access memories (RRAMs). ITO/ZrO _2 /Ag RRAM devices exhibit the properties of bipolar RRAMs.
Kyoungdu Kim +8 more
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IEEE Access, 2021 Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed.
Usman Bature Isyaku +4 more
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A Compact Model of Hafnium-Oxide-Based Resistive Random Access Memory
Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), 2013 In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations.
Andrea Padovani +7 more
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Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
Nanomaterials, 2021 Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil +6 more
doaj +1 more source
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
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Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning
Journal of Science: Advanced Materials and Devices, 2023 Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil +9 more
doaj +1 more source