Results 1 to 10 of about 512 (68)
Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
Advanced Electronic Materials, 2023 The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Yida Li, Jun Lan
exaly +2 more sources
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
Nanomaterials, 2020 Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are ...
Li Yang, Chun Zhao, Yina Liu
exaly +3 more sources
The Synthesis Method of Logic Circuits Based on the NMOS-Like RRAM Gates
IEEE Access, 2021 The synthesis method of logic circuits based on the RRAM (Resistive Random Access Memory) devices is of great concern in recent years. Inspired by the CMOS-like RRAM based logic gates, this work proposes a NMOS-like RRAM gate family.
Xiaole Cui, Ye Ma, Feng Wei, Xiaoxin Cui
doaj +1 more source
Effect of Hydrogen Annealing on Performances of BN-Based RRAM
Nanomaterials, 2023 BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 Resistive switching random access memory (RRAM) shows its potential to be a promising candidate as the basic in-memory computing unit for deep neural networks (DNN) accelerator design due to its non-volatile, low power, and small footprint properties ...
Chenglong Huang +5 more
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Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing
Nanomaterials, 2020 A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the ...
Lei Wu +3 more
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Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
doaj +1 more source
Journal of Asian Ceramic Societies, 2020 Amorphous LaGdO3 (LGO) thin films were deposited by using RF sputtering system and unipolar resistive switching (URS) properties in the Al/LGO/ITO structure were investigated.
Chia-Shan Chien +2 more
doaj +1 more source
Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes
Micromachines, 2021 Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications.
Donglin Zhang +12 more
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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2020 Analog compute-in-memory with resistive random access memory (RRAM) devices promises to overcome the data movement bottleneck in data-intensive artificial intelligence (AI) and machine learning.
Justin M. Correll +8 more
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