Results 1 to 10 of about 5,275 (241)

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures [PDF]

2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC), 2020
The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a promising solution as they enable cheap fine grain technology co-integration with CMOS, fast switching
Tuli, Shikhar, Rios, Marco, Levisse, Alexandre, ESL, David Atienza   +3 more
openaire   +2 more sources

Effect of Hydrogen Annealing on Performances of BN-Based RRAM

Nanomaterials, 2023
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
doaj   +2 more sources

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Advanced Electronic Materials, 2023
The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan
exaly   +2 more sources

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Nanomaterials, 2020
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are ...
Zongjie Shen, Chun Zhao, Yanfei Qi
exaly   +3 more sources

Investigation of key performance metrics in TiOX/TiN based resistive random-access memory cells [PDF]

Scientific Reports
Resistive random-access memory (RRAM) is a promising beyond-CMOS technology due to its non-volatility, scalability, and high ON/OFF ratio. Furthermore, a single RRAM cell can operate as an analog resistor, meaning that it can be used in more novel ...
Brandon R. Zink, William A. Borders, Advait Madhavan, Brian D. Hoskins, Jabez McClelland   +4 more
doaj   +2 more sources

The Synthesis Method of Logic Circuits Based on the NMOS-Like RRAM Gates

IEEE Access, 2021
The synthesis method of logic circuits based on the RRAM (Resistive Random Access Memory) devices is of great concern in recent years. Inspired by the CMOS-like RRAM based logic gates, this work proposes a NMOS-like RRAM gate family.
Xiaole Cui, Ye Ma, Feng Wei, Xiaoxin Cui
doaj   +1 more source

An Open-Source RRAM Compiler

2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), 2022
Memory compilers are necessary tools to boost the design procedure of digital circuits. However, only a few are available to academia. Resistive Random Access Memory (RRAM) is characterised by high density, high speed, non volatility and is a potential candidate of future digital memories.
Dimitris Antoniadis, Andrea Mifsud, Peilong Feng, Timothy G. Constandinou   +3 more
openaire   +2 more sources

Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems

IEEE Journal of the Electron Devices Society, 2021
Resistive switching random access memory (RRAM) shows its potential to be a promising candidate as the basic in-memory computing unit for deep neural networks (DNN) accelerator design due to its non-volatile, low power, and small footprint properties ...
Chenglong Huang, Nuo Xu, Keni Qiu, Yujie Zhu, Desheng Ma, Liang Fang   +5 more
doaj   +1 more source

Self-Compliance and High Performance Pt/HfO_x/Ti RRAM Achieved through Annealing

Nanomaterials, 2020
A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfOx/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the ...
Lei Wu, Hongxia Liu, Jinfu Lin, Shulong Wang   +3 more
doaj   +1 more source

An RRAM Biasing Parameter Optimizer [PDF]

IEEE Transactions on Electron Devices, 2015
Research on memory devices is a highly active field, and many new technologies are being constantly developed. However, characterizing them and understanding how to bias for optimal performance are becoming an increasingly tight bottleneck. Here, we propose a novel technique for extracting biasing parameters, conducive to desirable switching behavior ...
Serb, Alexantrou, Khiat, Ali, Prodromakis, Themistoklis   +2 more
openaire   +2 more sources