Results 31 to 40 of about 5,289 (241)
Nanoscale Research Letters, 2017 A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array.
Zheng Zhou +8 more
doaj +1 more source
Materials Research Express, 2022 We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 °C under ambient atmospheric conditions.
Joong Hyeon Park +4 more
doaj +1 more source
Mott-transition-based RRAM [PDF]
, 2019 Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks.
Dittmann, Regina +10 more
core +1 more source
Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations [PDF]
, 2020 While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values ...
Atienza Alonso, David +12 more
core +1 more source
RRAM device with different switching layer thicknesses [PDF]
, 2019 This paper presents switching characteristics of Ni/HfOx/p(+)-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm
Min-Hwi Kim +15 more
core +1 more source
Glucose-based resistive random access memory for transient electronics
Journal of Information Display, 2019 In this research, glucose was adopted as the switching layer of resistive random access memory (RRAM) for transient electronics. The fabricated glucose-based RRAM showed bipolar switching behavior with stable endurance (100 cycles) and retention (104 ...
Sung Pyo Park +3 more
doaj +1 more source
LTspice implementation of PKU compact model of metal-oxide-based RRAM: part C_simulation of RRAM memory arrays [PDF]
, 2022 RRAM, which has the characteristics of high speed, low power consumption, easy integration, compatibility with CMOS technology, is a potential NVM technology.
Du, Yifan
core
Dynamically Configurable Physical Unclonable Function based on RRAM Crossbar [PDF]
, 2021 Physical unclonable function (PUF) has been an effective solution for hardware security with the popularity of the internet of things (IoT). Due to low power consumption and high area efficiency, an emerging nonvolatile memory, resistive random access ...
Gu, Chongyan; id_orcid +9 more
core +1 more source
IEEE Open Journal of the Communications Society, 2022 Next generation wireless networks are expected to be extremely complex due to their massive heterogeneity in terms of the types of network architectures they incorporate, the types and numbers of smart IoT devices they serve, and the types of emerging ...
Abdulmalik Alwarafy +4 more
doaj +1 more source
A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation [PDF]
, 2021 RRAM is a promising candidate for compute-in-memory (CIM) applications owing to its natural multiply-and-accumulate (MAC)-supporting structure, high bit-density, non-volatility, and a monolithic CMOS and RRAM process. In particular, multi-bit encoding in
Raychowdhury, Arijit +11 more
core +1 more source