Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications [PDF]
Nanoscale Research Letters, 2020 In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor +2 more
doaj +4 more sources
Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays [PDF]
NanomaterialsResistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.
Mikhail Fedotov +2 more
doaj +3 more sources
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing [PDF]
Chemical ReviewsIn the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation.
Daniele Ielmini, Giacomo Pedretti
exaly +4 more sources
Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO3 Layers [PDF]
NanomaterialsTwo-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures.
Kai Liu +9 more
doaj +3 more sources
Hierarchical Multi-Mode Computing in Interlayer-Coupled 3D RRAM Crossbar Arrays. [PDF]
Adv Sci (Weinh)2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Park S +7 more
europepmc +2 more sources
Hydrogen-Stabilized Self-Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer-Based Keyword Spotting. [PDF]
Adv Sci (Weinh)A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Lee S +5 more
europepmc +2 more sources
Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing. [PDF]
Adv Sci (Weinh)A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Lee S +6 more
europepmc +2 more sources
Advances and Perspectives in Graphene-Based Quantum Dots Enabled Neuromorphic Devices. [PDF]
Adv Sci (Weinh)Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Zhen Y +9 more
europepmc +2 more sources
Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM). [PDF]
Micromachines (Basel), 2021 Zahoor F +4 more
europepmc +2 more sources
ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
Crystals, 2023 In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes.
Mirosław Szybowicz +2 more
exaly +3 more sources