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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications [PDF]

open access: yesNanoscale Research Letters, 2020
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor   +2 more
doaj   +4 more sources

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays [PDF]

open access: yesNanomaterials
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.
Mikhail Fedotov   +2 more
doaj   +3 more sources

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing [PDF]

open access: yesChemical Reviews
In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation.
Daniele Ielmini, Giacomo Pedretti
exaly   +4 more sources

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO3 Layers [PDF]

open access: yesNanomaterials
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures.
Kai Liu   +9 more
doaj   +3 more sources

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

open access: yesFrontiers in Nanotechnology, 2021
Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao   +4 more
doaj   +1 more source

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

open access: yesAdvanced Electronic Materials, 2023
The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan   +15 more
doaj   +1 more source

Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system

open access: yesMaterials & Design, 2022
Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows
Zhiliang Chen   +9 more
doaj   +1 more source

Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System

open access: yesAdvanced Materials Interfaces, 2023
To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang   +8 more
doaj   +1 more source

Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

open access: yesAPL Materials, 2022
This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim   +5 more
doaj   +1 more source

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