Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications [PDF]
In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential ...
Furqan Zahoor +2 more
doaj +4 more sources
Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing [PDF]
In the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy efficiency needed in computation.
Daniele Ielmini, Giacomo Pedretti
exaly +4 more sources
Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays [PDF]
Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications.
Mikhail Fedotov +2 more
doaj +2 more sources
Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO3 Layers [PDF]
Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures.
Kai Liu +9 more
doaj +2 more sources
Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) [PDF]
Illani Mohd Nawi +2 more
exaly +2 more sources
ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes.
MIROSŁAW Szybowicz +2 more
exaly +3 more sources
With the arrival of the era of big data, the conventional von Neumann architecture is now insufficient owing to its high latency and energy consumption that originate from its separated computing and memory units. Neuromorphic computing, which imitates biological neurons and processes data through parallel procedures between artificial neurons, is now ...
Jang-Yeon Kwon +2 more
exaly +3 more sources
Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao +4 more
doaj +1 more source
Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan +15 more
doaj +1 more source
Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows
Zhiliang Chen +9 more
doaj +1 more source

