Results 21 to 30 of about 16,903,176 (225)
Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM
Materials Research Express, 2022 Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li +5 more
doaj +1 more source
ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation
Applied Surface Science Advances, 2022 This paper demonstrates the fabrication of a thin film of Zinc Oxide (ZnO) by RF sputtering on Indium Tin Oxide (ITO) substrate for Resistive Random-Access Memory (RRAM) application.
Shikha Kaushik +3 more
doaj +1 more source
Gradual reset and set characteristics in yttrium oxide based resistive random access memory [PDF]
, 2021 This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack.
Zintler, Alexander +7 more
core +1 more source
Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [PDF]
, 2011 It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large
Asal Kiazadeh +3 more
openaire +2 more sources
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source
Advanced Electronic Materials, 2022 Multifunctional nonvolatile photoelectronic memory devices with multilevel storage and logic operation are expected to perform logic‐in‐memory computing tasks and overcome the von Neumann bottleneck.
Jiacheng Li +5 more
doaj +1 more source
Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
doaj +1 more source
Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 This article presents a modified compact model of resistive random access memory (RRAM) with a tunneling barrier. The bilayer modulated RRAM can be integrated into a higher density array, reducing leakage current in standby mode.
Jia-Wei Lee +3 more
doaj +1 more source
Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) [PDF]
2011 3rd IEEE International Memory Workshop (IMW), 2010 Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories.
Wong, H.-S. Philip +7 more
openaire +2 more sources
Nanomaterials, 2022 With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen +7 more
doaj +1 more source