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Modeling of Bilayer Modulated RRAM and Its Array Performance for Compute-in-Memory Applications
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 This article presents a modified compact model of resistive random access memory (RRAM) with a tunneling barrier. The bilayer modulated RRAM can be integrated into a higher density array, reducing leakage current in standby mode.
Jia-Wei Lee +3 more
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Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Advances in Condensed Matter Physics, 2015 HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu +4 more
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Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) [PDF]
2011 3rd IEEE International Memory Workshop (IMW), 2010 Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories.
Wong, H.-S. Philip +7 more
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Nanomaterials, 2022 With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen +7 more
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A hardware Markov chain algorithm realized in a single device for machine learning
Nature Communications, 2018 Despite the need to develop resistive random access memory (RRAM) devices for machine learning, RRAM array-based hardware methods for algorithm require external electronics.
He Tian +6 more
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Nanoscale Research Letters, 2017 A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array.
Zheng Zhou +8 more
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Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement
AIP Advances, 2013 The refractory transition metal nitride (TMN) film Hafnium nitride (HfNx) was successfully prepared on silicon-based substrates as bottom electrodes for resistive random access memory (RRAM) cells in Pt (top)/metal oxide/ HfNx (bottom) sandwich structure.
Qigang Zhou, Jiwei Zhai
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Research progress in flexible resistive random access memory materials
Cailiao gongcheng, 2020 The basic structure, working principle, and the development process and research status of resistive random access memory (RRAM) were outlined. Material systems, including dielectric materials, electrode materials, and substrate materials, as well as ...
TANG Da-xiu +9 more
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Effect of Hydrogen Annealing on Performances of BN-Based RRAM
Nanomaterials, 2023 BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high ...
Doowon Lee, Hee-Dong Kim
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Variability characteristics of non-stoichiometric, low-cost silicon oxide resistive memory [PDF]
AIP AdvancesResistive-switching random access memory (RRAM) is an important class of data storage and computing devices. A recent technological trend requires RRAM devices to be manufactured in an environmentally and economically sound way.
Julia C. Rodrigues +4 more
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