Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
Frontiers in Nanotechnology, 2021 Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao +4 more
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Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
Advanced Electronic Materials, 2023 The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture.
Jun Lan +15 more
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Materials & Design, 2022 Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows
Zhiliang Chen +9 more
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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
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Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition
APL Materials, 2022 This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices.
Minjae Kim +5 more
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Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM
Materials Research Express, 2022 Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li +5 more
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ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation
Applied Surface Science Advances, 2022 This paper demonstrates the fabrication of a thin film of Zinc Oxide (ZnO) by RF sputtering on Indium Tin Oxide (ITO) substrate for Resistive Random-Access Memory (RRAM) application.
Shikha Kaushik +3 more
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Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles [PDF]
, 2011 It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for non-volatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large
Asal Kiazadeh +3 more
openaire +2 more sources
A semiconducting supramolecular Co(II)-metallogel based resistive random access memory (RRAM) design with good endurance capabilities. [PDF]
Sci RepA highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic ligand benzene-
Roy A +9 more
europepmc +2 more sources
Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures
IEEE Journal of the Electron Devices Society, 2016 Resistive switching behaviors of oxide-based resistive random access memory (RRAM) and the applications for the data storage and computing systems have been widely studied.
Jinfeng Kang +8 more
doaj +1 more source