Results 1 to 10 of about 76,331 (301)
Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM [PDF]
Scientific ReportsIn the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties.
Alireza Moazzeni +3 more
doaj +2 more sources
Multistate resistive switching in silver nanoparticle films [PDF]
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +2 more sources
Resistive switching in nano-structures [PDF]
Scientific Reports, 2018 Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either
V. G. Karpov, D. Niraula
doaj +3 more sources
Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode
Metals, 2021 In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device.
Hojeong Ryu, Sungjun Kim
doaj +1 more source
The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films
Journal of Asian Ceramic Societies, 2021 Bi2FeCrO6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two
Yan-Ping Jiang +5 more
doaj +1 more source
Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device
Metals, 2021 In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device.
Hojeong Ryu, Beomjun Park, Sungjun Kim
doaj +1 more source
Tunable resistive switching in shales
Results in Physics, 2022 Electrically induced resistive switching is a subject of increasing scientific interest because it is a candidate for universal non-volatile memory. We demonstrate resistive switching in a natural reservoir shale. The resistance of the rocks is repeatedly switched between the high-resistance state and low-resistance state, being controlled by the ...
Xinyang Miao +5 more
openaire +2 more sources
Nanomaterials, 2022 With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen +7 more
doaj +1 more source
Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films
Nanomaterials, 2020 We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov +7 more
doaj +1 more source
Tuning the resistive switching in tantalum oxide-based memristors by annealing
AIP Advances, 2020 A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a ...
Yang Li +10 more
doaj +1 more source