Results 1 to 10 of about 490,893 (298)

Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM [PDF]

Scientific Reports
In the exploration of materials for neuromorphic computing, Graphene Oxide (GO) stands out as a promising organic candidate due to its low-cost fabrication, flexibility, and tunable chemical properties.
Alireza Moazzeni, Hadi Riyahi Madvar, Samaneh Hamedi, Zoheir Kordrostami   +3 more
doaj   +2 more sources

Irregular Resistive Switching Behaviors of Al₂O₃-Based Resistor with Cu Electrode

Metals, 2021
In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device.
Hojeong Ryu, Sungjun Kim
doaj   +1 more source

The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films

Journal of Asian Ceramic Societies, 2021
Bi2FeCrO6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two
Yan-Ping Jiang, Hang-Lv Zhou, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang   +5 more
doaj   +1 more source

Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaO_x/ITO Device

Metals, 2021
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device.
Hojeong Ryu, Beomjun Park, Sungjun Kim
doaj   +1 more source

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current

Nanomaterials, 2022
With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, Ling Xu   +7 more
doaj   +1 more source

Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films

Nanomaterials, 2020
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov, Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Aleksandr A. Fedotov, Evgeny G. Zamburg, Vladimir A. Smirnov, Oleg A. Ageev   +7 more
doaj   +1 more source

Tuning the resistive switching in tantalum oxide-based memristors by annealing

AIP Advances, 2020
A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a ...
Yang Li, Y. Eren Suyolcu, Simone Sanna, Dennis Valbjørn Christensen, Marie Lund Traulsen, Eugen Stamate, Christian Søndergaard Pedersen, Peter A. van Aken, Juan Maria García Lastra, Vincenzo Esposito, Nini Pryds   +10 more
doaj   +1 more source

Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Advanced Electronic Materials, 2023
Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency.
Yang Li, Wei Wang, Di Zhang, Maria Baskin, Aiping Chen, Shahar Kvatinsky, Eilam Yalon, Lior Kornblum   +7 more
doaj   +1 more source

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Scientific Reports, 2021
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj   +1 more source

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

Nanomaterials, 2021
In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, Sungjun Kim   +5 more
doaj   +1 more source