Results 1 to 10 of about 120,078 (195)
Multistate resistive switching in silver nanoparticle films [PDF]
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +2 more sources
In-memory computing with resistive switching devices [PDF]
Modern computers are based on the von Neumann architecture in which computation and storage are physically separated: data are fetched from the memory unit, shuttled to the processing unit (where computation takes place) and then shuttled back to the ...
D. Ielmini, H. Wong
semanticscholar +3 more sources
Nanoscale resistive switching memory devices: a review
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms.
S. Slesazeck, T. Mikolajick
semanticscholar +4 more sources
Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces
For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature ...
Takafumi Ishibe +6 more
doaj +2 more sources
A Light‐Controlled Resistive Switching Memory
Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied.
Mariana Ungureanu +2 more
exaly +4 more sources
Reliability of analog resistive switching memory for neuromorphic computing
As artificial intelligence calls for novel energy-efficient hardware, neuromorphic computing systems based on analog resistive switching memory (RSM) devices have drawn great attention recently.
Meiran Zhao, Bin Gao, Jianshi Tang
exaly +2 more sources
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e ...
Ee Wah Lim, Razali Ismail
exaly +2 more sources
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj +1 more source
Spike-time dependent plasticity of tailored ZnO nanorod-based resistive memory for synaptic learning
Metal oxide resistive memory is a potential device that can substantially influence the current roadmap for nonvolatile memory and neuromorphic computing.
Shubham V. Patil +9 more
doaj +1 more source
HfO2-based resistive switching memory devices for neuromorphic computing
HfO2-based resistive switching memory (RRAM) combines several outstanding properties, such as high scalability, fast switching speed, low power, compatibility with complementary metal-oxide-semiconductor technology, with possible high-density or three ...
S. Brivio, Sabina Spiga, D. Ielmini
semanticscholar +1 more source

