Results 1 to 10 of about 2,200,736 (300)

A graphene integrated highly transparent resistive switching memory device

APL Materials, 2018
We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the ...
Sita Dugu, Shojan P. Pavunny, Tej B. Limbu, Brad R. Weiner, Gerardo Morell, Ram S. Katiyar   +5 more
doaj   +2 more sources

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Nanoscale Research Letters, 2019
Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding, Yulin Feng, Peng Huang, Lifeng Liu, Jinfeng Kang   +4 more
doaj   +1 more source

Recent advances in organic‐based materials for resistive memory applications

InfoMat, 2020
With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory ...
Yang Li, Qingyun Qian, Xiaolin Zhu, Yujia Li, Mayue Zhang, Jingni Li, Chunlan Ma, Hua Li, Jianmei Lu, Qichun Zhang   +9 more
doaj   +1 more source

Unraveling the origin of resistive switching behavior in organolead halide perovskite based memory devices

AIP Advances, 2020
This study investigates the operation mechanisms of organolead halide perovskite based resistive memory cells and explores the device architectures that could ensure high memory endurance and high fabrication reproducibility.
Xiaojing Wu, Hui Yu, Jie Cao
doaj   +1 more source

Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

Nanomaterials, 2016
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai, Wenbiao Qiu, Zecun Zeng, Shuying Cheng, Jinling Yu, Qiao Zheng   +5 more
doaj   +1 more source

Bipolar resistive switching behaviors of ITO nanowire networks

AIP Advances, 2016
We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior.
Qiang Li, Zhina Gong, Shuai Wang, Jiangteng Wang, Ye Zhang, Feng Yun   +5 more
doaj   +1 more source

Multilevel resistive switching memory in lead-free double perovskite La 2 NiFeO 6 films. [PDF]

Discov Nano, 2023
Qin Y, Gao Y, Lv F, Huang F, Liu F, Zhong T, Cui Y, Tian X.   +7 more
europepmc   +1 more source

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. [PDF]

Polymers (Basel), 2023
Li B, Zhang S, Xu L, Su Q, Du B.
europepmc   +1 more source

Improved Uniformity of TaO_x-Based Resistive Switching Memory Device by Inserting Thin SiO₂ Layer for Neuromorphic System. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Jang J, Kim S.
europepmc   +1 more source

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques. [PDF]

Sci Rep, 2023
Patil SM, Kundale SS, Sutar SS, Patil PJ, Teli AM, Beknalkar SA, Kamat RK, Bae J, Shin JC, Dongale TD.   +9 more
europepmc   +1 more source