Results 21 to 30 of about 872 (214)
Multistate resistive switching behaviors for neuromorphic computing in memristor
Materials Today Advances, 2021 Conventional Von Neumann computing systems encounter increasing challenges in the big-data era due to the constraints by the separated data storage and processing. Resistive random-access memory provides dual functionalities of data storage and computing
B. Sun +7 more
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Degenerate resistive switching and ultrahigh density storage in resistive memory [PDF]
Applied Physics Letters, 2014 We show that in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially ...
Andrew J. Lohn +3 more
openaire +2 more sources
Advanced Electronic Materials, 2018 Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang +5 more
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Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces
Science and Technology of Advanced Materials, 2020 For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature ...
Takafumi Ishibe +6 more
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Nanoscale Research Letters, 2022 Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata +3 more
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Multistate resistive switching in silver nanoparticle films
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
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Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
AIP Advances, 2012 Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou +7 more
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Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
AIP Advances, 2017 Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching ...
Zijin Wu +7 more
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Hijacking emergency granulopoiesis: Neutrophil ontogeny and reprogramming in cancer
Molecular Oncology, EarlyView.Neutrophils are highly plastic innate immune cells; their functions in cancer extend beyond the tumour microenvironment. This Review summarises current understanding of neutrophil maturation and heterogeneity and highlights tumour‐induced granulopoiesis as a systemic programme that expands immature, immunosuppressive neutrophils via tumour‐derived ...
Gabriela Marinescu, Yi Feng
wiley +1 more source
Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Advances in Condensed Matter Physics, 2015 HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu +4 more
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