Results 21 to 30 of about 123,696 (336)

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Nanomaterials, 2021
Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil, Honggyun Kim, Shania Rehman, Kalyani D. Kadam, Jamal Aziz, Muhammad Farooq Khan, Deok-kee Kim   +6 more
doaj   +1 more source

Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits

IEEE Transactions on Electron Devices, 2021
Resistive switching memory (RRAM) is a promising technology for embedded memory and its application in computing. In particular, RRAM arrays can provide a convenient primitive for matrix–vector multiplication (MVM) with strong impact on the acceleration ...
V. Milo, A. Glukhov, E. Pérez, C. Zambelli, N. Lepri, M. K. Mahadevaiah, E. Quesada, P. Olivo, C. Wenger, D. Ielmini   +9 more
semanticscholar   +1 more source

Multi-Level Resistive Switching in SnSe/SrTiO₃ Heterostructure Based Memristor Device

Nanomaterials, 2022
Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based ...
Tsz-Lung Ho, Keda Ding, Nikolay Lyapunov, Chun-Hung Suen, Lok-Wing Wong, Jiong Zhao, Ming Yang, Xiaoyuan Zhou, Ji-Yan Dai   +8 more
doaj   +1 more source

Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell

Molecules, 2023
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu, Jinhao Jia, Xinru Qu, Qingcheng Wang, Wenbo Kang, Baosheng Liu, Qingquan Xiao, Tinghong Gao, Quan Xie   +8 more
doaj   +1 more source

The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films

Journal of Asian Ceramic Societies, 2021
Bi2FeCrO6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two
Yan-Ping Jiang, Hang-Lv Zhou, Xin-Gui Tang, Qiu-Xiang Liu, Wen-Hua Li, Zhen-Hua Tang   +5 more
doaj   +1 more source

Switching Power Universality in Unipolar Resistive Switching Memories [PDF]

Scientific Reports, 2016
AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin, Jung, Kyooho, Kim, Yongmin, Jo, Yongcheol, Cho, Sangeun, Woo, Hyeonseok, Lee, Seongwoo, Inamdar, A. I., Hong, Jinpyo, Lee, Jeon-Kook, Kim, Hyungsang, Im, Hyunsik   +11 more
openaire   +3 more sources

Degenerate resistive switching and ultrahigh density storage in resistive memory [PDF]

Applied Physics Letters, 2014
We show that in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially ...
Andrew J. Lohn, Patrick R. Mickel, Conrad D. James, Matthew J. Marinella   +3 more
openaire   +2 more sources

Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Results in Physics, 2019
With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li, Bai Sun, Wentao Hou, Jiao Chen, Pingping Zheng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Guoqiang Fu   +8 more
doaj   +1 more source

Resistance switching memories are memristors [PDF]

Applied Physics A, 2011
All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
openaire   +1 more source

Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Results in Physics, 2020
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj   +1 more source