Results 11 to 20 of about 2,200,736 (300)

Quantum Dots for Resistive Switching Memory and Artificial Synapse [PDF]

open access: yesNanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim   +2 more
doaj   +3 more sources

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory. [PDF]

open access: yesMaterials (Basel), 2017
Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant
Kim S   +5 more
europepmc   +7 more sources

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer [PDF]

open access: yesGlobal Challenges, 2022
In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature.
Jaemin Park   +5 more
doaj   +2 more sources

Nanoscale resistive switching memory devices: a review [PDF]

open access: yesNanotechnology, 2022
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms.
Slesazeck, Stefan, Mikolajick, Thomas
core   +4 more sources

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces [PDF]

open access: yesScience and Technology of Advanced Materials, 2020
For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature ...
Takafumi Ishibe   +6 more
doaj   +2 more sources

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current [PDF]

open access: yesNanomaterials, 2022
With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen   +7 more
doaj   +2 more sources

Halide Perovskites for Resistive Switching Memory

open access: yesThe Journal of Physical Chemistry Letters, 2021
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von ...
Xiaosheng Tang (1806301)   +5 more
core   +3 more sources

Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory [PDF]

open access: yesScientific Reports, 2017
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom   +7 more
doaj   +2 more sources

Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites [PDF]

open access: yes, 2023
Optoelectronic switching memories are emerging as practical candidates for applications of optically tunable neuromorphic computing systems and artificial vision systems.
Lowe, Chris   +3 more
core   +1 more source

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

open access: yesScientific Reports, 2021
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj   +1 more source

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