Results 11 to 20 of about 872 (214)
The transformation of digital to analog resistance switching behavior in Bi2FeCrO6 thin films
Journal of Asian Ceramic Societies, 2021 Bi2FeCrO6 (BFCO) thin films were fabricated by sol-gel method. Digital and analog resistive switching behaviors were sequentially observed in Au/BFCO/FTO/Glass structure by applying a continuous cyclic voltage. By analyzing formation mechanism of the two
Yan-Ping Jiang +5 more
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Results in Physics, 2019 With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li +8 more
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Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
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An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors [PDF]
Advanced Electronic Materials, 2020 AbstractIt has been suggested that all resistive‐switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed to determine whether a given physical system is indeed a memristor or not. Here,
Jinsun Kim +4 more
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Results in Physics, 2020 Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
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Switching Power Universality in Unipolar Resistive Switching Memories [PDF]
Scientific Reports, 2016 AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin +11 more
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Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)
Frontiers in Nanotechnology, 2023 The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman +7 more
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Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
Frontiers in Nanotechnology, 2021 Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao +4 more
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Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
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Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
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