Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer [PDF]
Global Challenges, 2022 In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature.
Jaemin Park +5 more
doaj +2 more sources
Memristive tonotopic mapping with volatile resistive switching memory devices [PDF]
Nat CommunTo reach the energy efficiency and the computing capability of biological neural networks, novel hardware systems and paradigms are required where the information needs to be processed in both spatial and temporal domains.
Alessandro Milozzi +2 more
semanticscholar +2 more sources
Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM) [PDF]
Sci Rep, 2020 We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the ...
Taeyoon Kim +8 more
semanticscholar +2 more sources
Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current [PDF]
Nanomaterials, 2022 With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a significant application in neuromorphic computing, which is similar to the tunable weight of ...
Tong Chen +7 more
doaj +2 more sources
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory [PDF]
Materials, 2017 Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar ...
Sungjun Kim +5 more
openaire +4 more sources
Quantum Dots for Resistive Switching Memory and Artificial Synapse [PDF]
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
doaj +2 more sources
Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory [PDF]
Scientific Reports, 2017 Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom +7 more
doaj +2 more sources
Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
Materials Research Express, 2021 In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj +1 more source
An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors [PDF]
Advanced Electronic Materials, 2020 AbstractIt has been suggested that all resistive‐switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed to determine whether a given physical system is indeed a memristor or not. Here,
Jinsun Kim +4 more
openaire +4 more sources
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source