Results 31 to 40 of about 8,899 (300)
Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
Frontiers in Nanotechnology, 2021 Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao +4 more
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Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
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Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
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Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices [PDF]
Journal of the Korean Physical Society, 2016 The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 ...
Yun, Min Ju, Kim, Sungho, Kim, Hee-Dong
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ANODIC FORMATION OF HfO2 NANOSTRUCTURE ARRAYS FOR RESISTIVE SWITCHING APPLICATION
, 2020 Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability,
Kamnev, Kirill +7 more
core +1 more source
Multistate resistive switching behaviors for neuromorphic computing in memristor
Materials Today Advances, 2021 Conventional Von Neumann computing systems encounter increasing challenges in the big-data era due to the constraints by the separated data storage and processing. Resistive random-access memory provides dual functionalities of data storage and computing
B. Sun +7 more
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Multistate Resistive Switching Memory for Synaptic Memory Applications [PDF]
Advanced Materials Interfaces, 2016 Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory
Hota, Mrinal Kanti +4 more
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Advanced Electronic Materials, 2018 Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang +5 more
doaj +1 more source
Nanoscale Research Letters, 2022 Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata +3 more
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Multistate resistive switching in silver nanoparticle films
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +1 more source