Results 31 to 40 of about 123,696 (336)

Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]

, 2017
Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu, Asanuma, Baikalov, Beck, Bertaud, Borgatti, Borgatti, Chen, Chen, Chevallier, Dirkmann, Dudy, Fabris, Fairley, Fors, French, Fujii, Garvie, Govoreanu, Govoreanu, Gundlach, Hansen, Hasan, Herpers, Herrero-Martin, Hu, Hunt, Ifland, Ignatiev, Jablonski, Jeon, Jeong, Kawano, Kobayashi, Kohlstedt, Kroeger, Lee, Lenser, Luis Garcia-Munoz, Marot, McComb, Meyer, Muenstermann, Nian, Oka, Oshima, Ostanin, Ostanin, Park, Parreira, Pomfret, Quintero, Richter, Rozenberg, Sacchi, Santander-Syro, Sawa, Sawa, Schramm, Scott, Seong, Shono, Sim, Simmons, Slooten, Sowinska, Truccato, Walsh, Waser, Watanabe, Watanabe, Xue   +71 more
core   +1 more source

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Frontiers in Nanotechnology, 2023
The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman, A. Jaman, A. S. Goossens, A. S. Goossens, J. J. L. van Rijn, L. van der Zee, T. Banerjee, T. Banerjee   +7 more
doaj   +1 more source

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Frontiers in Nanotechnology, 2021
Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao, Yudi Zhao, Ruiqi Chen, Peng Huang, Jinfeng Kang   +4 more
doaj   +1 more source

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Journal of Materiomics, 2018
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu, Lai-Mun Wong, Shijie Wang, Kaiyang Zeng   +3 more
doaj   +1 more source

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory [PDF]

, 2019
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements.
Deswal, Sweety, Kumar, Ajeet, Kumar, Ashok, Malode, Rupali R.   +3 more
core   +2 more sources

How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]

, 2018
Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying, Choudhary, Satyan, De Roo, Jonathan, De Keukeleere, Katrien, Van Driessche, Isabel, Crosby, Alfred J, Nonnenmann, Stephen S   +6 more
core   +2 more sources

Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory.

ACS Applied Materials and Interfaces, 2020
Hybrid organic-inorganic halide perovskites (HPs) have garnered significant attention for use in resistive switching (RS) memory devices; this is due to their low cost, low operation voltage, high ON/OFF ratio, and excellent mechanical properties ...
SangMyeong Lee, Hyojung Kim, Dong Hoe Kim, Won Bin Kim, Jae Myeong Lee, Jaeho Choi, Hyunjung Shin, G. Han, Ho Won Jang, H. Jung   +9 more
semanticscholar   +1 more source

Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping

Advanced Intelligent Systems, 2022
Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma   +7 more
doaj   +1 more source

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]

, 2014
An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng, Chen, Yen-Ting, Fowler, Burt W., Lee, Jack C., Wang, Yanzhen, Xue, Fei, Zhou, Fei   +6 more
core   +1 more source

Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices [PDF]

Journal of the Korean Physical Society, 2016
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 ...
Yun, Min Ju, Kim, Sungho, Kim, Hee-Dong
openaire   +2 more sources