Results 31 to 40 of about 2,200,736 (300)
An Experimental Proof that Resistance‐Switching Memory Cells are not Memristors [PDF]
Advanced Electronic Materials, 2020 AbstractIt has been suggested that all resistive‐switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed to determine whether a given physical system is indeed a memristor or not. Here,
Jinsun Kim +4 more
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Results in Physics, 2020 Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj +1 more source
Ionic liquid-enhanced soft resistive switching devices† [PDF]
RSC Advances, 2016 Resistive switching phenomena are of paramount importance in the area of memory devices. In the present study, we have fabricated a simple resistive switching device using a solution processable nanocomposite based on silver nitrate and poly(vinylidene ...
Krishna Rajan +9 more
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Switching Power Universality in Unipolar Resistive Switching Memories [PDF]
Scientific Reports, 2016 AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin +11 more
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Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)
Frontiers in Nanotechnology, 2023 The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman +7 more
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Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
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Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
Frontiers in Nanotechnology, 2021 Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility.
Yudi Zhao +4 more
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Memristor-based Random Access Memory: The delayed switching effect could revolutionize memory design [PDF]
, 2015 Memristor’s on/off resistance can naturally store binary bits for non-volatile memories. In this work, we found that memristor’s another peculiar feature that the switching takes place with a time delay (we name it “the delayed switching”) can be used to
Wang, Frank Z. +6 more
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Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
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ANODIC FORMATION OF HfO2 NANOSTRUCTURE ARRAYS FOR RESISTIVE SWITCHING APPLICATION
, 2020 Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability,
Kamnev, Kirill +7 more
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