Results 51 to 60 of about 8,899 (300)

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

, 2017
Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nano-crystalline hafnium oxide thin film is fabricated ...
Liu, Gang, Ji, Zhenghui, Xu, Xiao-Hong, Liang Pan, Zhan, Qingfeng, Zhenghui Ji, Gang Liu, Qingfeng Zhan, Niu, Xuhong, Xuhong Niu, Xiao-Hong Xu, Shang, Jie, Xue, Wuhong, Pan, Liang, Wuhong Xue, Xiaohui Yi, Jie Shang, Yi, Xiaohui, Li, Run-Wei, Run-Wei Li   +19 more
core   +1 more source

Tumor B‐cell infiltration in platinum‐treated advanced muscle‐invasive urothelial carcinoma

Molecular Oncology, EarlyView.
Bladder tumors with higher pretreatment memory B‐cell infiltration were linked to longer survival after cisplatin chemotherapy, but not carboplatin. These tumors also showed more organized immune structures (tertiary lymphoid structures) and a shared pro‐inflammatory B‐cell‐rich community, suggesting that memory B cells may help identify patients most ...
Konrad Stawiski, Júlia Perera‐Bel, Alejo Rodriguez‐Vida, Nuria Juanpere, Jihyun Lee, Daniel E. Michaud, Jennifer L. Guerriero, Kent W. Mouw, Aristotelis Bamias, Filipe L. F. Carvalho, Joaquim Bellmunt   +10 more
wiley   +1 more source

Epigenetic heterogeneity and plasticity in therapy‐induced tumor states through single‐cell multi‐omics

Molecular Oncology, EarlyView.
Single‐cell multi‐omics reveals epigenetic heterogeneity across therapy‐adaptive tumor states, including quiescent/dormant, drug‐tolerant persister, and EMT‐like phenotypes. By linking regulatory features with state‐associated biomarkers, these approaches inform biomarker‐guided therapeutic strategies for evolving tumors.
Hee Jung Kim, Hwiyeong Lee, Jin Hong, Daechan Park   +3 more
wiley   +1 more source

Low-power resistive random access memory by confining the formation of conducting filaments

AIP Advances, 2016
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang, Tzu-Hsien Shen, Lan-Hsuan Lee, Cheng-Yen Wen, Si-Chen Lee   +4 more
doaj   +1 more source

Stable Resistive Switching in ZnO/PVA:MoS₂ Bilayer Memristor

Nanomaterials, 2022
Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their ...
Tangyou Sun, Hui Shi, Shuai Gao, Zhiping Zhou, Zhiqiang Yu, Wenjing Guo, Haiou Li, Fabi Zhang, Zhimou Xu, Xiaowen Zhang   +9 more
doaj   +1 more source

Recycling of NiTi Shape Memory Alloys: Fundamental and Technological Aspects of a Vacuum Induction Melting Processing Route

Advanced Engineering Materials, EarlyView.
The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee, Son Tung Mai, Sarath Menon, Braulio Gadiel Sánchez Ortega, Ralf Drautz, Alexander Kauffmann, Gunther Eggeler, Jan Frenzel   +7 more
wiley   +1 more source

Data related to the nanoscale structural and compositional evolution in resistance change memories

Data in Brief, 2018
The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a
Taimur Ahmed, Sumeet Walia, Edwin L.H. Mayes, Rajesh Ramanathan, Paul Guagliardo, Vipul Bansal, Madhu Bhaskaran, J. Joshua Yang, Sharath Sriram   +8 more
doaj   +1 more source

Plasma Modified Silicon Nitride Resistive Switching Memories

2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019
In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented.
Panagiotis Karakolis, Pascal Normand, Panagiotis Dimitrakis, L. Sygelou, Vasileios G. Ntinas, Iosif-Angelos Fyrigos, Ioannis Karafyllidis, George Ch. Sirakoulis   +7 more
openaire   +2 more sources

TaO x -based resistive switching memories: prospective and challenges [PDF]

Nanoscale Research Letters, 2013
Abstract Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications.
Prakash, Amit, Jana, Debanjan, Maikap, Siddheswar   +2 more
openaire   +2 more sources