Results 51 to 60 of about 123,696 (336)
Multistate Resistive Switching Memory for Synaptic Memory Applications [PDF]
Advanced Materials Interfaces, 2016 Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory
Hota, Mrinal Kanti +4 more
openaire +2 more sources
Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]
Advanced Intelligent Systems, 2020 In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in storage and processing at any time. This propounds a strong demand for the stretchable and wearable
Qiuwei Shi +3 more
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Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution [PDF]
, 2014 Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications.
MacLaren, DA +2 more
core +1 more source
Chemical ReviewsIn the information age, novel hardware solutions are urgently needed to efficiently store and process increasing amounts of data. In this scenario, memory devices must evolve significantly to provide the necessary bit capacity, performance, and energy ...
D. Ielmini, G. Pedretti
semanticscholar +1 more source
Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
AIP Advances, 2017 Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching ...
Zijin Wu +7 more
doaj +1 more source
, 2009 We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu +7 more
core +1 more source
Oxides based resistive switching memories
Oxide-based Materials and Devices XII, 2021 This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers.
Kalem, Seref +7 more
openaire +3 more sources
Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices
, 2014 Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved.
Johan Vanacken +3 more
core +1 more source
Investigating Unipolar Switching in Niobium Oxide Resistive Switches: Correlating Quantized Conductance and Mechanism [PDF]
, 2018 Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in transition metal ...
Deswal, Sweety +2 more
core +2 more sources
Modeling Electrical Switching Behavior of Carbon Resistive Memory [PDF]
IEEE Access, 2020 The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory switching mechanism of amorphous carbon media remains mysterious and thus severely restricted its application prospect.
Qiaofeng Ou +2 more
openaire +2 more sources