Results 71 to 80 of about 123,696 (336)
Resistive switching phenomena in TiOx nanoparticle layers for memory applications
, 2014 Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been ...
Casanova, Fèlix +7 more
core +1 more source
Noise on resistive switching: a Fokker–Planck approach [PDF]
, 2016 We study the effect of internal and external noise on the phenomenon of resistive switching. We consider a non-harmonic external driving signal and provide a theoretical framework to explain the observed behavior in terms of the related Fokker–Planck ...
Fierens, Pablo Ignacio +2 more
core +2 more sources
Impact of laser attacks on the switching behavior of RRAM devices [PDF]
, 2020 The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory ...
Arumi Delgado, Daniel +7 more
core +2 more sources
Applied Materials Today, 2019 Photo-induced novel effect in a material with multiple physical properties has highly important potential applications in the photo-electric multifunctional electronic devices.
Pingping Zheng +9 more
semanticscholar +1 more source
Advanced Engineering Materials, EarlyView.The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee +7 more
wiley +1 more source
Data related to the nanoscale structural and compositional evolution in resistance change memories
Data in Brief, 2018 The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a
Taimur Ahmed +8 more
doaj +1 more source
Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films
Nanomaterials, 2020 We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov +7 more
doaj +1 more source
Stochastic Memristive Devices for Computing and Neuromorphic Applications
, 2013 Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems.
Choi, Shinhyun +4 more
core +1 more source
Computational Capacity and Energy Consumption of Complex Resistive Switch Networks [PDF]
, 2015 Resistive switches are a class of emerging nanoelectronics devices that exhibit a wide variety of switching characteristics closely resembling behaviors of biological synapses.
Alireza Goudarzi +4 more
core +4 more sources
Plasma Modified Silicon Nitride Resistive Switching Memories
2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019 In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented.
Panagiotis Karakolis +7 more
openaire +2 more sources