Results 71 to 80 of about 8,899 (300)

Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM

Materials Research Express, 2022
Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li, Xin Zhou, Liu Xu, Jiale Wang, Binhe Wu, Chunrui Wang   +5 more
doaj   +1 more source

High-Quality Single-Crystalline β-Ga₂O₃ Nanowires: Synthesis to Nonvolatile Memory Applications

Nanomaterials, 2021
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin, Mon-Shu Ho   +5 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Localized Heating and Switching in MoTe2 -Based Resistive Memory Devices [PDF]

, 2020
Two-dimensional (2D) materials have recently been incorporated into resistive memory devices due to their atomically thin nature, but their switching mechanism is not yet well understood. Here we study bipolar switching in MoTe2-based resistive memory of
Yalon, Eilam, Pop, Eric, Muñoz Rojo, Miguel, Deshmukh, Sanchit, Datye, Isha, Mleczko, Michael   +5 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

AIP Advances, 2012
Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAMs. This study revealed that one of the main factors causing variation is the presence of multiple filaments in each memory cell.
Hayato Tanaka, Kentaro Kinoshita, Masataka Yoshihara, Satoru Kishida   +3 more
doaj   +1 more source

Resistive Switching Memory Based on Bioinspired Natural Solid Polymer Electrolytes

, 2016
A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural
Jang-Sik Lee (1683466), Niloufar Raeis Hosseini (1683469)   +1 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Integration of TaOx-based resistive-switching element and GaAs diode

APL Materials, 2013
We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element.
Z. Xu, X. Tong, S. F. Yoon, Y. C. Yeo, C. K. Chia, G. K. Dalapati, D. Z. Chi   +6 more
doaj   +1 more source