Results 71 to 80 of about 2,200,736 (300)

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes

npj 2D Materials and Applications, 2021
Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit.
Sanchali Mitra, Arnab Kabiraj, Santanu Mahapatra   +2 more
doaj   +1 more source

Resistive switching memory using biomaterials

, 2019
Resistive switching memory (ReRAM) is emerging as a developed technology for a new generation of non-volatile memory devices. Natural organic biomaterials are potential elements of environmentally-benign, biocompatible, and biodegradable electronic ...
LEE, JANG SIK, RAEISHOSSEINI, NILOUFAR
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM

Materials Research Express, 2022
Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li, Xin Zhou, Liu Xu, Jiale Wang, Binhe Wu, Chunrui Wang   +5 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

AIP Advances, 2012
Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAMs. This study revealed that one of the main factors causing variation is the presence of multiple filaments in each memory cell.
Hayato Tanaka, Kentaro Kinoshita, Masataka Yoshihara, Satoru Kishida   +3 more
doaj   +1 more source

Silicon compatible Sn-based resistive switching memory

, 2018
Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.
Kiran Sasikumar, Supratik Guha, Ralu Divan, Sushant Sonde, Leonidas E. Ocola, Pabitra Choudhury, Kai Ni, Yuzi Liu, Liliana Stan, Daniel Rosenmann, Jianqiang Lin, Bhaswar Chakrabarti, Subramanian K. R. S. Sankaranarayanan, Suman Datta   +13 more
core   +1 more source