Results 71 to 80 of about 872 (214)
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai +5 more
doaj +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Photoaligned and photopatterned liquid crystal platforms provide programmable control of optical phase, polarization, and spin‐orbit interactions, enabling compact generation of structured light and complex wavefronts. This review highlights how tailored molecular orientations transform simple beams into designed optical fields, opening versatile ...
Le Zhou +6 more
wiley +1 more source
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley +1 more source
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han +6 more
wiley +1 more source
Thermally Robust Spin–Orbit Torque Switching in Low‐Resistivity Mo‐Alloyed β‐W Heterostructures
Mo‐alloyed β‐W heterostructures exhibit enhanced spin‐orbit torque efficiency, reduced resistivity and switching current density, and reliable operation from −50 to +150°C. The optimized W87.3Mo12.7 device achieves high spin Hall conductivity with thermal robustness, highlighting its potential for energy‐efficient magnetic memory and automotive ...
Han Seok Ko +7 more
wiley +1 more source
Bipolar resistive switching behaviors of ITO nanowire networks
We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior.
Qiang Li +5 more
doaj +1 more source
Catalytically Enhanced Near Room‐Temperature Hydrogen Sensing Using Pd‐ZnO Colloidal Crystals
Pd‐decorated ZnO colloidal crystal monolayers demonstrate excellent performance across a wide hydrogen concentration range at 33°C, with high selectivity and reproducible device fabrication. The sensors show strong responses even at low‐ppm H2 concentrations and an ultra‐low detection limit of 82 ppb, indicating their suitability for diverse hydrogen ...
Hamidah Alluhaybi +13 more
wiley +1 more source

