Results 81 to 90 of about 123,696 (336)

TaO x -based resistive switching memories: prospective and challenges [PDF]

Nanoscale Research Letters, 2013
Abstract Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications.
Prakash, Amit, Jana, Debanjan, Maikap, Siddheswar   +2 more
openaire   +2 more sources

Molecular Dynamics Studies of Shape Memory Polymers: From Bead–Spring Models to Atomistic Simulations

Advanced Engineering Materials, EarlyView.
Coarse‐grained (left) and atomistic (right) models of the shape memory polymer ESTANE ETE 75DT3 are shown schematically. The two representations bridge molecular detail and mesoscopic description. Both models capture shape memory behavior, linking segmental mobility and conformational relaxation of anisotropic chains to macroscopic recovery, and ...
Fathollah Varnik
wiley   +1 more source

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Scientific Reports, 2017
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from
Bohee Hwang, Jang-Sik Lee
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Resistive switching in nanogap systems on SiO2 substrates

, 2009
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further
Chen, Collins, Collins, Dearnaley, Dearnaley, Dearnaley, Deshpande, Endo, Gould, Hirose, Jin, Kim, Kim, Li, Meister, Naitoh, Ouyang, Satoh, Scott, Shatzkes, Simmons, Sinitskii, Standley, Szot, Thurstans, Waser, Weitz, Wokaun, Yang, Yao   +29 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes

npj 2D Materials and Applications, 2021
Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit.
Sanchali Mitra, Arnab Kabiraj, Santanu Mahapatra   +2 more
doaj   +1 more source

A nonvolatile organic resistive switching memory based on lotus leaves

Chemistry Physics, 2019
The resistance random access memory (RRAM) based on biomaterials, which has the advantages of sustainable, green and environment-friendly, has great potential application in the sustainable electronic devices.
Yiming Qi, B. Sun, Guoqiang Fu, Tengteng Li, Shouhui Zhu, Liang Zheng, Shuangsuo Mao, Xiang Kan, M. Lei, Yuanzheng Chen   +9 more
semanticscholar   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

Advanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang, Max Gießübel, Pankaj Dharpure, Andrea Albert, Vira Niestierkina, Paul Mulvaney, Mukundan Thelakkat, Jürgen Köhler   +7 more
wiley   +1 more source

Dual-Functional Nanoscale Devices Using Phase-Change Materials: A Reconfigurable Perfect Absorber with Nonvolatile Resistance-Change Memory Characteristics [PDF]

, 2019
Integration of metamaterial and nonvolatile memory devices with tunable characteristics is an enthusing area of research. Designing a unique nanoscale prototype to achieve a metasurface with reliable resistive switching properties is an elusive goal.
RAEIS-HOSSEINI, NILOUFAR, RHO, JUNSUK
core   +2 more sources