Results 81 to 90 of about 2,200,736 (300)
Analysis on switching mechanism of graphene oxide resistive memory device [PDF]
, 2011 Recently, a flexible resistive switching memory device using graphene oxide was successfully demonstrated. In this work, the new findings on the switching mechanism of the graphene oxide memory are presented through a comprehensive study on the switching
Kim, Sang Ouk +7 more
core +1 more source
Localized Heating and Switching in MoTe2 -Based Resistive Memory Devices [PDF]
, 2020 Two-dimensional (2D) materials have recently been incorporated into resistive memory devices due to their atomically thin nature, but their switching mechanism is not yet well understood. Here we study bipolar switching in MoTe2-based resistive memory of
Yalon, Eilam +5 more
core +2 more sources
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Integration of TaOx-based resistive-switching element and GaAs diode
APL Materials, 2013 We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element.
Z. Xu +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory
Advanced Electronic Materials, 2018 A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high ...
Yuxi Yang +5 more
doaj +1 more source
Advanced Materials Interfaces, 2023 Negative differential resistance (NDR) with multi‐level resistive switching has been investigated for realizing multi‐level memory devices. However, achieving a high peak‐to‐valley ratio of NDR is a formidable challenge for a reliable multi‐level switch.
Sonia Sharma +6 more
doaj +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Electroforming free resistive switching memory in two-dimensional VOx nanosheets [PDF]
, 2015 We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices.
Hedhili, Mohamed N. +7 more
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source