Results 101 to 110 of about 2,200,736 (300)
Ion transport-related resistive switching in film sandwich structures
Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years. To utilize the resistive switching memories for high-performance information storage applications, a thorough understanding
Liu, Gang +3 more
core
Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
Resistive-Switching Memory Effects of NiO Nanowire/Metal ...
Jin-Soo Kim (7954) +5 more
core +1 more source
A multicomponent supramolecular hydrogel integrating cell‐adhesive and antibacterial peptides within an alginate‐cellulose nanofibril matrix is developed. Peptide co‐assembly simultaneously strengthens the hydrogel network, improves extrusion printability, and imparts cell‐adhesive and antibacterial functions, offering a versatile platform for ...
Mor Tsuriano‐Zernichov +4 more
wiley +1 more source
Unipolar resistive switching and mechanism in Gd-doped-TiO2-based resistive switching memory devices
Gd-doped-TiO2-based resistive switching random-access memory (RRAM) devices with MOM structure of top metal electrode (W, Ti)/Gd-doped-TiO2/Pt/Ti/SiO2/Si were fabricated, and resistive switching characteristics were investigated.
Liu, L. F. +13 more
core +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Long memory with Markov-Switching GARCH [PDF]
The paper considers the Markov-Switching GARCH(1,1)-model with time-varying transition probabilities. It derives su?cient conditions for the square of the process to display long memory and provides some additional intuition for the empirical observation
Krämer, Walter
core
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Protein-based Resistive Switching Memory with Configurable Switching Properties
Resistive switching memory (ReRAM) based on natural materials has received great attention as emerging memory devices due to flexible, low cost, biocompatible, and biodegradable properties.
LEE, JANG SIK, Sungjo Kim
core
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source

