Results 101 to 110 of about 8,899 (300)

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Electrodeposition of GeSbTe-based resistive switching memory in crossbar arrays

, 2021
In this work, we report on the fabrication of resistive random-access memory cells based on electrodeposited GeSbTe material between TiN top and bottom electrodes in a crossbar architecture.
Noori, Yasir J., Reid, Gillian, Beanland, Richard, Meng, Lingcong, Jaafar, Ayoub H., Zhang, Wenjian, Han, Yisong, Smith, David C., Huang, Ruomeng, de Groot, Kees, Bartlett, Philip N.   +10 more
core   +1 more source

3D Printing Innovations in Polymeric Porous and Patterned Architecture

Advanced Functional Materials, EarlyView.
Polymeric foams occupy a unique structural space between dense solids and open networks, where engineered void fraction governs mechanical compliance, thermal resistance, and mass transport. Additive manufacturing now enables precise spatial control over cellular architecture, unlocking designer foam structures across applications spanning crash ...
Dhanush Patil, Sri Vaishnavi Thummalapalli, Clarissa Westover, Arunachalam Ramanathan, M. Taylor Sobzcak, Roumika Patil, Qixuan Xiang, Tiantian Li, Sui Yang, Timothy E. Long, Hongyue Sun, Xianqiao Wang, Yang Liu, Kenan Song   +13 more
wiley   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source

Bipolar resistive switching behaviors of ITO nanowire networks

AIP Advances, 2016
We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior.
Qiang Li, Zhina Gong, Shuai Wang, Jiangteng Wang, Ye Zhang, Feng Yun   +5 more
doaj   +1 more source

Protein-based Resistive Switching Memory with Configurable Switching Properties

, 2017
Resistive switching memory (ReRAM) based on natural materials has received great attention as emerging memory devices due to flexible, low cost, biocompatible, and biodegradable properties.
LEE, JANG SIK, Sungjo Kim
core  

Photo-stimulated resistive switching of ZnO nanorods

, 2018
Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of
Yong, K, Park, J, Lee, S
core   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Structural effect on controllable resistive memory switching in donor-acceptor polymer systems

, 2014
Controllable bistable electrical conductivity switching behavior and resistive memory effects have been demonstrated in Al/polymer/indium-tin oxide (ITO) sandwich structure devices, constructed from non-conjugated vinyl copolymers of PTPA(n)OXD(m) with ...
Liu, Gang, Chen, Po-Hao, Tsai, Hsin-Luen, Wang, Kun-Li, Pan, Liang   +4 more
core