Results 111 to 120 of about 2,200,736 (300)
Advanced Functional Materials, EarlyView.Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi +8 more
wiley +1 more source
The Forecast Performance of Long Memory and Markov Switching Models [PDF]
Recent research has focused on the links between long memory and structural change, stressing the long memory properties that may arise in models with parameter changes. In this paper, we contribute to this research by comparing the forecasting abilities
Vasco J. Gabriel, Luis F. Martins
core
Advanced Functional Materials, EarlyView.Inspired by skeletal muscles’ precision and endurance, CoilLCE integrates a self‐sensing liquid crystal elastomer/graphene artificial muscle with an embedded Joule‐heating copper coil, enabling closed‐loop multistage actuation with programmable intermediate states (strain accuracy of 2%), and antagonistic coordination (32% total strain). These features
Ziyun Zhang +9 more
wiley +1 more source
Structural effect on controllable resistive memory switching in donor-acceptor polymer systems
, 2014 Controllable bistable electrical conductivity switching behavior and resistive memory effects have been demonstrated in Al/polymer/indium-tin oxide (ITO) sandwich structure devices, constructed from non-conjugated vinyl copolymers of PTPA(n)OXD(m) with ...
Liu, Gang +4 more
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Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
Advanced Functional Materials, EarlyView.An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
ChipsOxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications.
Biswajit Jana, Ayan Roy Chaudhuri
doaj +1 more source
Photo-stimulated resistive switching of ZnO nanorods
, 2018 Resistive switching memory devices are promising candidates for emerging memory technologies because they yield outstanding device performance. Storage mechanisms for achieving high-density memory applications have been developed; however, so far many of
Yong, K, Park, J, Lee, S
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Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites
Advanced Functional Materials, EarlyView.Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto +4 more
wiley +1 more source
INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES
Journal of Advanced Dielectrics, 2011 Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The
SHENG-YU WANG, TSEUNG-YUEN TSENG
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Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping. [PDF]
Nanomaterials (Basel), 2022 Xu J +7 more
europepmc +1 more source