Results 111 to 120 of about 123,696 (336)
An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory
Advanced Electronic Materials, 2018 A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high ...
Yuxi Yang +5 more
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Recent advances in organic‐based materials for resistive memory applications
InfoMat, 2020 With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory ...
Yang Li +9 more
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Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon [PDF]
, 2015 Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming.
Baxter R. J. +5 more
core +4 more sources
INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES
Journal of Advanced Dielectrics, 2011 Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The
SHENG-YU WANG, TSEUNG-YUEN TSENG
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A ZnTaOx Based Resistive Switching Random Access Memory [PDF]
ECS Solid State Letters, 2014 The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of
Zheng, K. +5 more
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2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, EarlyView.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Nanoscale Research Letters, 2019 Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
doaj +1 more source
, 2018 Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and
Khare, Neeraj, Munjal, Sandeep
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Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory
Nanomaterials, 2016 ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai +5 more
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AIP Advances, 2020 This study investigates the operation mechanisms of organolead halide perovskite based resistive memory cells and explores the device architectures that could ensure high memory endurance and high fabrication reproducibility.
Xiaojing Wu, Hui Yu, Jie Cao
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