Results 111 to 120 of about 8,899 (300)

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

, 2015
We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices.
Hedhili, Mohamed N., M. K. Hota, D. H. Nagaraju, H. N. Alshareef, Nagaraju, Doddahalli H., Alshareef, Husam N., M. N. Hedhili, Hota, Mrinal Kanti   +7 more
core   +1 more source

Time‐Resolved Magnetization Switching Dynamics Driven by Orbital Torques

Advanced Functional Materials, EarlyView.
Du et al. reveal nanosecond magnetization switching driven by orbital currents using time‐resolved Hall detection. The measurements separate domain nucleation from domain wall propagation and show that Joule heating strongly assists switching by lowering energy barriers.
Ao Du, Shilei Ding, Min‐Gu Kang, Marco Hoffmann, Pietro Gambardella   +4 more
wiley   +1 more source

Multilevel resistive switching memory in lead-free double perovskite La 2 NiFeO 6 films. [PDF]

Discov Nano, 2023
Qin Y, Gao Y, Lv F, Huang F, Liu F, Zhong T, Cui Y, Tian X.   +7 more
europepmc   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

Advanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong, You Zhou, Qingxiu Li, Wenyu Zhao, Sunyingyue Geng, Hangfei Li, Yan‐Bing Leng, Shirui Zhu, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Ye Zhou, Su‐Ting Han   +12 more
wiley   +1 more source

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. [PDF]

Polymers (Basel), 2023
Li B, Zhang S, Xu L, Su Q, Du B.
europepmc   +1 more source

Crossbar architecture based on 2R complementary resistive switching memory cell

, 2012
International audienceEmerging non-volatile memoires (e.g. STT-MRAM, OxRRAM and CBRAM) based on resistive switching are under intense R&D investigation by both academics and industries.
Aziza, Hassen, Muller, Christophe, W. S. Zhao, J. O. Klein, Klein, Jacques-Olivier, C. Muller, D. Querlioz, H. Aziza, Y. Zhang, D. Chabi, D. Ravelosona, J. M. Portal, Zhang, Y, Querlioz, Damien,, Portal, Jean-Michel, Deleruyelle, Damien, Querlioz, Damien, S, Bocquet, Marc, C. Chappert, Chappert, Claude, D. Deleruyelle, Zhao, Weisheng, M. Bocquet, Ravelosona, Dafine   +23 more
core   +1 more source

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Advanced Materials, EarlyView.
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra, Alberto M. Ruiz, Marta Galbiati, Álvaro Cortés‐Flores, Daniel Brown, Esteban Zamora‐Amo, Lisa Almonte, Andrei Shumilin, Juan Salvador‐Sánchez, Ana Pérez‐Rodríguez, Iñaki Orue, Andrés Cantarero, Andres Castellanos‐Gomez, Federico Mompeán, Mar Garcia‐Hernandez, Efrén Navarro‐Moratalla, Enrique Diez, Mario Amado, José J. Baldoví, M. Reyes Calvo   +19 more
wiley   +1 more source

Improved Uniformity of TaO_x-Based Resistive Switching Memory Device by Inserting Thin SiO₂ Layer for Neuromorphic System. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Jang J, Kim S.
europepmc   +1 more source

Resistive switching memory : next generation non-volatile memory technology

, 2019
The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate.
Poh, Jake Wei Li
core  

Transient Charging of Mixed Ionic‐Electronic Conductors by Anomalous Diffusion

Advanced Materials, EarlyView.
This article explores charge transport in mixed ionic‐electronic conductors (MIECs) through electrochemical impedance spectroscopy and transient current analysis. Focusing on PEDOT:PSS, WO3, and n‐doped PBDF, it uncovers the impact of anomalous diffusion via fractional modeling. The study reveals key correlations that deepen understanding and guide the
Heyi Zhang, Gonzalo Rivera‐Sierra, Shirin Siahjani‐Gultekin, Jenifer Rubio‐Magnieto, Anis Allagui, Ignacio Sanjuán, David Franco, Antonio Guerrero, Enrique H. Balaguera, Juan Bisquert   +9 more
wiley   +1 more source