Results 131 to 140 of about 8,899 (300)

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites. [PDF]

ACS Omega, 2022
Thien GSH, Ab Rahman M, Yap BK, Tan NML, He Z, Low PL, Devaraj NK, Ahmad Osman AF, Sin YK, Chan KY.   +9 more
europepmc   +1 more source

Zeolitic-imidazole framework thin film-based flexible resistive switching memory

, 2017
As some of the organic-inorganic hybrid materials that have been researched actively for decades, metal-organic frameworks (MOFs) have been studied in various fields due to their high chemical tunability and stability.
Myung-Joo Park, Jang-Sik Lee
core   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride. [PDF]

Micromachines (Basel), 2021
Das NC, Kim M, Rani JR, Hong SM, Jang JH.   +4 more
europepmc   +1 more source

Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

, 2016
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge ...
Kim, Tae-Hyun, Venkatachalam, Dinesh, Belay, Kidane, Nawaz (Saleh), Muhammad, Karouta, Fouad, Elliman, Robert   +5 more
core   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices

, 2017
The impact of hydrogen peroxide treatment on the surface of ZnO film used for transparent resistive memory device application has been investigated.
Firman Mangasa Simanjuntak, Bhaskar Pattanayak, Chun-Chieh Lin, Simanjuntak, Firman Mangasa, Lin, Chun-Chieh, Pattanayak, Bhaskar, Tseung-Yuen Tseng, Tseng, Tseung-Yuen   +7 more
core   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory. [PDF]

iScience, 2022
Zhou G, Ji X, Li J, Zhou F, Dong Z, Yan B, Sun B, Wang W, Hu X, Song Q, Wang L, Duan S.   +11 more
europepmc   +1 more source