Results 131 to 140 of about 123,696 (336)
Simultaneous electric and magnetic field induced nonvolatile memory
, 2005 We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence.
Levy, P., Leyva, A. G., Quintero, M.
core +1 more source
Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems
Advanced Functional Materials, EarlyView.MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley +1 more source
Bipolar resistive switching behaviors of ITO nanowire networks
AIP Advances, 2016 We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior.
Qiang Li +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Stability and Migration of Small Copper Clusters in Amorphous Dielectrics
, 2015 We use density functional theory (DFT) to study the thermodynamic stability and migration of copper ions and small clusters embedded in amorphous silicon dioxide.
Guzman, David M. +2 more
core +1 more source
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling
IEEE Transactions on Electron Devices, 2019 Resistive-switching random access memory (RRAM) based on Cu or Ag filament is a promising selector device for high-density crosspoint arrays. These devices display high ON-OFF ratio, volatile switching, high switching speed, and long endurance ...
Wei Wang +6 more
semanticscholar +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Multilevel resistive switching memory in lead-free double perovskite La 2 NiFeO 6 films. [PDF]
Discov Nano, 2023 Qin Y +7 more
europepmc +1 more source
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Advanced Functional Materials, EarlyView.Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source
Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. [PDF]
Polymers (Basel), 2023 Li B, Zhang S, Xu L, Su Q, Du B.
europepmc +1 more source