Results 121 to 130 of about 8,899 (300)

Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications

Chips
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications.
Biswajit Jana, Ayan Roy Chaudhuri
doaj   +1 more source

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques. [PDF]

Sci Rep, 2023
Patil SM, Kundale SS, Sutar SS, Patil PJ, Teli AM, Beknalkar SA, Kamat RK, Bae J, Shin JC, Dongale TD.   +9 more
europepmc   +1 more source

Non-volatile resistive switching in nanoscaled elemental tellurium by vapor transport deposition on gold

Two-dimensional (2D) materials are highly promising as resistive switching materials for neuromorphic and in-memory computing owing to their fascinating properties derived from their low thickness.
Sara, Ghomi, Alessio, Lamperti, Yoonseok, Lee, Andrea, Serafini, Sepideh, Gharedaghi, Paolo, Targa, Christian, Martella, Carlo, Grazianetti, Deji, Akinwande, Alessandro, Molle, Davide , Codegoni, Chiara, Massetti   +11 more
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Switching kinetics of SiC resistive memory for harsh environments

, 2015
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and ...
L. Zhong, J. Fan, L. Jiang, K. A. Morgan, R. P. Gowers, C. H. de Groot, R. Huang   +6 more
core   +1 more source

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

Advanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping. [PDF]

Nanomaterials (Basel), 2022
Xu J, Zhu Y, Liu Y, Wang H, Zou Z, Ma H, Wu X, Xiong R.   +7 more
europepmc   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Physical Review X, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, Tom Wu   +10 more
doaj   +1 more source

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer. [PDF]

Nanomaterials (Basel), 2022
Lee KJ, Lin WS, Wang LW, Lin HN, Wang YH.   +4 more
europepmc   +1 more source