Results 121 to 130 of about 2,200,736 (300)

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer. [PDF]

Nanomaterials (Basel), 2022
Lee KJ, Lin WS, Wang LW, Lin HN, Wang YH.   +4 more
europepmc   +1 more source

Resistive switching memory : next generation non-volatile memory technology

, 2019
The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate.
Poh, Jake Wei Li
core  

Crossbar architecture based on 2R complementary resistive switching memory cell

, 2012
International audienceEmerging non-volatile memoires (e.g. STT-MRAM, OxRRAM and CBRAM) based on resistive switching are under intense R&D investigation by both academics and industries.
Aziza, Hassen, Muller, Christophe, W. S. Zhao, J. O. Klein, Klein, Jacques-Olivier, C. Muller, D. Querlioz, H. Aziza, Y. Zhang, D. Chabi, D. Ravelosona, J. M. Portal, Zhang, Y, Querlioz, Damien,, Portal, Jean-Michel, Deleruyelle, Damien, Querlioz, Damien, S, Bocquet, Marc, C. Chappert, Chappert, Claude, D. Deleruyelle, Zhao, Weisheng, M. Bocquet, Ravelosona, Dafine   +23 more
core   +1 more source

Sub‐1 ms Optoelectronic Synapse Based on {ZnCdO/ZnO} Multilayer Structure for High‐Speed Neuromorphic Vision Systems

Advanced Functional Materials, EarlyView.
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski, Eunika Zielony, Adrian Kaim, Ewa Przeździecka   +3 more
wiley   +1 more source

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride. [PDF]

Micromachines (Basel), 2021
Das NC, Kim M, Rani JR, Hong SM, Jang JH.   +4 more
europepmc   +1 more source

Switching kinetics of SiC resistive memory for harsh environments

, 2015
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest ROFF/RON ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and ...
L. Zhong, J. Fan, L. Jiang, K. A. Morgan, R. P. Gowers, C. H. de Groot, R. Huang   +6 more
core   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source

Nonvolatile Resistive Switching in Pt/LaAlO_{3}/SrTiO_{3} Heterostructures

Physical Review X, 2013
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO_{3}/SrTiO_{3} heterostructures,
Shuxiang Wu, Xin Luo, Stuart Turner, Haiyang Peng, Weinan Lin, Junfeng Ding, Adrian David, Biao Wang, Gustaaf Van Tendeloo, Junling Wang, Tom Wu   +10 more
doaj   +1 more source

Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites. [PDF]

ACS Omega, 2022
Thien GSH, Ab Rahman M, Yap BK, Tan NML, He Z, Low PL, Devaraj NK, Ahmad Osman AF, Sin YK, Chan KY.   +9 more
europepmc   +1 more source