Results 141 to 150 of about 8,899 (300)

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities. [PDF]

RSC Adv, 2022
Raeis-Hosseini N, Chen S, Papavassiliou C, Valov I.   +3 more
europepmc   +1 more source

Resistive Switching Characteristics of Antimony Oxide Thin Film for Resistive Switching Random Access Memory Application [PDF]

, 2013
학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2013. 2. 김형준.Resistive switching (RS) oxide materials, including various binary metal oxides (BMO) and perovskite structured ternary oxides, have been researched extensively for application to next-generation nonvolatile ...
안영배
core  

Measuring the Hall Effect in Hysteretic Materials

Advanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya, Anthony Voyemant, Sudipta Chatterjee, Scott B. Lee, Grigorii Skorupskii, Connor J. Pollak, Leslie M. Schoop   +6 more
wiley   +1 more source

Resistive switching properties and mechanisms of La doped ZnO thin film memory cells

AIP Advances
In this paper, the memory cells based on ZnO thin films with various La concentrations (x% La:ZnO, x = 0, 2, 4, 6) are fabricated using the sol-gel spin coating method.
Jiahao Zhang, Jianbo Yang, Xiang Luo, Yan Zhang, Honglong Zheng, Xianpei Ren, Qiwei Hu, Ping He, Gang Yan, Yuanping Liu, Rui Wen, Qiang Li   +11 more
doaj   +1 more source

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

, 2016
A bio-memristor fabricated with ferritin exhibits novel resistive switching characteristics wherein memory switching and threshold switching are made steadily coexistent and inter-convertible through controlling the magnitude of compliance current ...
Liu, Gang, Tan, Hongwei, Zhang, Chaochao, Shang, Jie, Hao, Jian, Guo, Shanshan, Xue, Wuhong, Pan, Liang, Yang, Xi, Li, Run-Wei   +9 more
core  

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Giant Orbital Rashba–Edelstein Effect in Crystalline Cu2O/Cu Heterostructures

Advanced Materials, EarlyView.
An enhanced orbital Rashba–Edelstein effect is demonstrated in a crystalline Cu2O/Cu heterostructure, compared to naturally oxidized CuOx structures, highlighting the critical role of crystallinity and interface control in orbital torque generation. The resulting spin torque conductivity exceeds that of Pt, indicating the potential of orbital torque ...
San Ko, Jaimin Kang, Su Jae Kim, Hanhwi Jang, Do‐Kyeong Nam, Minseok Kang, Sunghoon Kim, Yeon Sik Jung, Se‐Young Jeong, Kab‐Jin Kim, Byong‐Guk Park   +10 more
wiley   +1 more source

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

Advanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung, Jiaxiang Yi, Hieu Nguyen‐Duc, Tien Nu Hoang Lo, Weili Zhao, Chaoqun Dong, Fabien Sorin, Baris Caglar, Lei Wei, Tung Nguyen‐Dang   +9 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials
Resistive Random Access Memory (ReRAM) devices offer a promising solution for next‐generation non‐volatile memory and neuromorphic computing systems. Yet, existing compact models fail to capture analog resistive switching behavior of ReRAM devices.
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
doaj   +1 more source