Results 141 to 150 of about 123,696 (336)

Kinetic Regimes of Hydrogen Absorption in Thin Films

Advanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco, Sabine Pütter, Yury N. Khaydukov, Luca Silvi, Mariano A. Paulin, Attila Csik, Thomas Keller, Bernhard Keimer   +7 more
wiley   +1 more source

Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.

Journal of Colloid and Interface Science, 2019
The resistive switching effect is a great physical phenomenon that the resistance of a material can be reversibly changed by applying an electric pulse, which is useful to constructing the nonvolatile resistance random access memory (RRAM) in the next ...
Bai Sun, T. Guo, Guangdong Zhou, S. Ranjan, W. Hou, Yunming Hou, Yong Zhao   +6 more
semanticscholar   +1 more source

Improved Uniformity of TaO_x-Based Resistive Switching Memory Device by Inserting Thin SiO₂ Layer for Neuromorphic System. [PDF]

Materials (Basel), 2023
Ju D, Kim S, Jang J, Kim S.
europepmc   +1 more source

Magnetothermal‐Triggered Response and Self‐Healing of Recyclable and Reprocessable Nanocomposites for Actuation Systems

Advanced Functional Materials, EarlyView.
Developing recyclable materials for magnetic robotics that combine rapid response and self‐healing properties is challenging. Hence, this study focuses on the integration of magnetothermal nanoparticles into a dynamic sorbitol‐based vitrimer, a recyclable composite capable of remote actuation and self‐healing by magnetic heating.
Maria Weißpflog, Gloria Signorato, Birgit Hankiewicz, Volker Abetz   +3 more
wiley   +1 more source

Oxygen Vacancy Engineering and Its Impact on Resistive Switching of Oxide Thin Films for Memory and Neuromorphic Applications

Chips
Oxygen vacancy engineering in metal oxides is a propitious route to modulate their resistive switching properties for memory and neuromorphic applications.
Biswajit Jana, Ayan Roy Chaudhuri
doaj   +1 more source

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques. [PDF]

Sci Rep, 2023
Patil SM, Kundale SS, Sutar SS, Patil PJ, Teli AM, Beknalkar SA, Kamat RK, Bae J, Shin JC, Dongale TD.   +9 more
europepmc   +1 more source

Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity

Advanced Functional Materials, EarlyView.
This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su, Huacheng Zhang, Tamar L. Greaves, Qi Han, Weiwei Lei, Dan Liu   +5 more
wiley   +1 more source

Fast Track to the Overdoped Regime of Superconducting YBa2Cu3O7‐δ Thin Films via Electrochemical Oxidation

Advanced Functional Materials, EarlyView.
Overdoping high temperature superconductors, such as YBa2Cu3O7‐δ (YBCO), is expected to maxime the critical current density by optimising the condensation energy for a given defect landscape, providing new thrust for the development of fusion enabling coated conductors. Here, precise oxygen control is achieved via an electrochemical method allowing for
Alexander Stangl, Aiswarya Kethamkuzhi, Hervé Roussel, Cornelia Pop, Xavier Obradors, Teresa Puig, Mónica Burriel, Arnaud Badel   +7 more
wiley   +1 more source

Improved Performance of NbO_x Resistive Switching Memory by In-Situ N Doping. [PDF]

Nanomaterials (Basel), 2022
Xu J, Zhu Y, Liu Y, Wang H, Zou Z, Ma H, Wu X, Xiong R.   +7 more
europepmc   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source