Results 161 to 170 of about 2,200,736 (300)

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

Sustainable Poly(Lactic Acid)/Graphene Oxide Bioelectronic Platform for Neurotransmitters Sensing and Tunable Stimulation of Astrocytes

Advanced Materials, EarlyView.
This work introduces sustainable PLA/graphene oxide bioelectronic interfaces featuring electrodes with tunable conductivity and strong electrocatalytic performance. These platforms were used to implement a new method for tuning astrocyte Ca2+ signaling and for the efficient detection of key biomarkers.
Alessandra Scidà, Giulia Cazzador, Roberta Fabbri, Matteo Calosi, Alessandro Silvestri, Andrea Candini, Fabiola Liscio, Franco Corticelli, Aikaterini Konstantoulaki, Andrea D'Iorio, Marco Caprini, Vincenzo Palermo, Monica Bertoldo, Valentina Benfenati, Chiara Zanardi, Emanuele Treossi   +15 more
wiley   +1 more source

Multilevel Resistive Switching Memory Based on a CH₃NH₃PbI _3-xCl_x Film with Potassium Chloride Additives. [PDF]

Nanoscale Res Lett, 2020
Lv F, Ling K, Zhong T, Liu F, Liang X, Zhu C, Liu J, Kong W.   +7 more
europepmc   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application

, 2020
In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO2 /HfO2
Zhong, G, Huang, R, Bao, L, Cai, Y, Wang, Z, Wu, L, Wang, B, Ling, Y, ,, Bai, G, Kang, J, Chen, Q, Robertson, J   +12 more
core  

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Liquid Crystal Elastomer‐Based Haptic Pixel Arrays at Your Fingertips for Advanced Human–Machine Interfaces

Advanced Materials, EarlyView.
We mechanically program liquid crystal elastomer coatings as a stimuli‐responsive and digitally addressable platform for refreshable tactile displays; we validate the perceptual performance of our dynamic device matches conventional static tactile media.
Tom Bruining, Enjun Lin, Yu Zou, Meike Heldoorn, Pengrong Lyu, Samuël A. M. Weima, Astrid M. L. Kappers, Myrthe A. Plaisier, Satoshi Aya, Danqing Liu   +9 more
wiley   +1 more source

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]

ACS Omega
Chen HC, Kao IC, Lai KJ, Chen CY, Chang YC.   +4 more
europepmc   +1 more source

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

Advanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam, Towhidur Rahaman, Céline Besnard, Arnulf Rosspeintner, Latevi Max Lawson Daku, Saood Khan, Soumya Jyoti Ray, Thomas Bürgi   +7 more
wiley   +1 more source