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Advanced Science, EarlyView.A layered bead‐network wallpaper is designed to modulate the light propagation path, overcoming the color residue limitations of thermochromic components for efficient automatic switching between radiative cooling and solar heating modes. The layered bead‐network wallpaper provides passive, all‐season thermal regulation while offering self‐cleaning and
Jianyu Wu +7 more
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In-memory Learning with Analog Resistive Switching Memory: A Review and Perspective
Proceedings of the IEEE, 2021In this article, we review the existing analog resistive switching memory (RSM) devices and their hardware technologies for in-memory learning, as well as their challenges and prospects. Since the characteristics of the devices are different for in-memory learning and digital memory applications, it is important to have an in-depth understanding across
Yue Xi, Meng-Fan Chang, Huaqiang Wu
exaly +2 more sources
Resistive Switching Memory Devices Based on Proteins
Advanced Materials, 2015Resistive switching memory constitutes a prospective candidate for next‐generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices.
Bowen Zhu, Hong Wang, Yaqing Liu
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Halide Perovskites for Resistive Switching Memory
The Journal of Physical Chemistry Letters, 2021Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture.
Kaijin Kang, Wei Hu, Xiaosheng Tang
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Nanoionics-based resistive switching memories
Nature Materials, 2007Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable.
Rainer, Waser, Masakazu, Aono
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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Resistive Switches and Memories from Silicon Oxide
Nano Letters, 2010Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments ...
Jun, Yao +4 more
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Complementary resistive switches for passive nanocrossbar memories
Nature Materials, 2010On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits.
Eike, Linn +3 more
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In-place Repair for Resistive Memories Utilizing Complementary Resistive Switches
Proceedings of the 2016 International Symposium on Low Power Electronics and Design, 2016Recent advances in resistive memory technologies have demonstrated their potential to serve as next generation random access memories (RAM) which are fast, low-power, ultra-dense, and nonvolatile. However, owing to their stochastic filamentary nature, several sources of hard errors exist that could affect the lifetime of a resistive RAM (ReRAM).In this
Amirali Ghofrani +3 more
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Plasma Modified Silicon Nitride Resistive Switching Memories
2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2019In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented.
Panagiotis Karakolis +7 more
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