Results 151 to 160 of about 8,899 (300)

Designable van der Waals Crystal for Artificial Neuronal Cell Mimicking

Advanced Materials, EarlyView.
Designable van der Waals crystal has been demonstrated for device‐scale neuronal cell mimicking. The structural similarity between ion‐channel in biological membranes and layered vdW lattices is realized with nano‐crystallization via Ar + H2S plasma sulfurization.
Jinhyoung Lee, Gunhyoung Kim, Dongho Lee, Seowoo Son, Hyunho Seok, Sihoon Son, Hyunbin Choi, Geonwook Kim, Geumji Back, Hyunkyu Kim, Chaerin Park, Junmin Ahn, Seongyun Je, Chaeyoung Im, Junil Cho, Magdalena Grzeszczyk, Seongho Kim, Eunseo Go, Hyunwoo Shim, Donghwan Choi, Muyoung Kim, Hyoeng‐U. Kim, Won‐Jun Jang, Taesung Kim   +23 more
wiley   +1 more source

Resistive switching phenomena for resistive random access memory applications

, 2013
The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible ...
Sim, Raymond Keng Lim.
core  

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology

, 2017
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation ...
Zhang, Haizhong
core   +1 more source

Cell Adhesion by Design: Engineering Tissue Culture Scaffolds With Adhesion Cues

Advanced Materials Interfaces, EarlyView.
ABSTRACT In scaffold‐based tissue engineering, the matrix should provide adequate adhesion cues for cell attachment, spreading, and function. Given the multitude of adhesion receptors and the diversity of scaffolds, there are many approaches to render scaffolds adhesive, even though they are not all equivalent.
Dalia Dranseike, Dhananjay V. Deshmukh, Mark W. Tibbitt, Céline Labouesse   +3 more
wiley   +1 more source

Perovskite Quantum Dot-Based Memory Technologies: Insights from Emerging Trends

Nanomaterials
Perovskite quantum dots (PVK QDs) are gaining significant attention as potential materials for next-generation memory devices leveraged by their ion dynamics, quantum confinement, optoelectronic synergy, bandgap tunability, and solution-processable ...
Fateh Ullah, Zina Fredj, Mohamad Sawan
doaj   +1 more source

Robust resistive switching performance of pulsed laser deposited SiC/Ag/SiC tri-layer thin films deposited on a glass substrate

In this work, the authors developed SiC(10 nm)/Ag/SiC(10 nm) thin films showing an electroforming-free resistive switching (RS) effect with a switching ratio of 102.
Kamakshi, Koppole, Kumar, N.S. Kiran, Sekhar, K. C., Pereira, Mário, Silva, José Pedro Basto   +4 more
core   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

Nanocharacterization of resistance switching oxides for resistive memories

, 2012
En raison de leur faible consommation d'énergie, les mémoires non volatiles (MNV) sont En raison de leur faible consommation d'énergie, les mémoires non-volatiles sont particulièrement intéressantes pour l'électronique portative (clé USB, téléphone, ordinateur portable …).
openaire   +1 more source

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

Advanced Materials Technologies, EarlyView.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu, Mengyao Xiao, Zhouli Sui, Yinpeng Wang, Daoye Zheng, Yuxin Liu, Luwei Wang, Huajun Liu, Chengkuo Lee   +8 more
wiley   +1 more source