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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
Crystals, 2022 The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time.
Hanwen Wang +6 more
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Semiconductor spintronics [PDF]
Acta Physica Slovaca. Reviews and Tutorials, 2007 Semiconductor spintronicsSpintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or ...
Fabian, J. +4 more
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Novel physical network algorithm for indirect measurement of polished rod load of beam-pumping unit
The Journal of Engineering, 2019 A novel neural network algorithm for indirect measurement of the polished rod load of the beam-pumping unit is proposed. The dynamometer card is a two-dimension graph of polished rod load versus horse head position, and it is widely used for working ...
Ke Wang +6 more
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IEEE Journal of the Electron Devices Society, 2015 The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality.
Liyang Zhang +9 more
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High-Speed and High-Performance Continuous-Time ADCs for Automotive Receivers
IEEE Open Journal of the Solid-State Circuits Society, 2023 This article presents an overview of high-speed and high-performance continuous-time (CT) ADCs with a special attention to the application field of automotive receivers for broadcast radio and radar.
Lucien J. Breems +3 more
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Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
Crystals, 2023 In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact.
Guo Li +13 more
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Technology investigation on time series classification and prediction [PDF]
PeerJ Computer Science, 2022 Time series appear in many scientific fields and are an important type of data. The use of time series analysis techniques is an essential means of discovering the knowledge hidden in this type of data.
Yuerong Tong +9 more
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COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES
Le Journal de Physique Colloques, 1990 A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Matthai, C., Ashu, P.
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Rapidly Verifiable XMSS Signatures
Transactions on Cryptographic Hardware and Embedded Systems, 2020 This work presents new speed records for XMSS (RFC 8391) signature verification on embedded devices. For this we make use of a probabilistic method recently proposed by Perin, Zambonin, Martins, Custódio, and Martina (PZMCM) at ISCC 2018, that changes ...
Joppe W. Bos +3 more
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Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]
MRS Proceedings, 1989 ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
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