Results 31 to 40 of about 55,939 (266)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Point convolutional neural network algorithm for Ising model ground state research based on spring vibration

open access: yesScientific Reports
The ground state search of the Ising model can be used to solve many combinatorial optimization problems. Under the current computer architecture, an Ising ground state search algorithm suitable for hardware computing is necessary for solving practical ...
Zhelong Jiang   +10 more
doaj   +1 more source

BEANIE – A 32-bit Cipher for Cryptographic Mitigations Against Software Attacks

open access: yesIACR Transactions on Symmetric Cryptology
In modern CPU architectures, various security features to mitigate software attacks can be found. Examples of such features are logical isolation, memory tagging or shadow stacks. Basing such features on cryptographic isolation instead of logical checks
Simon Gerhalter   +9 more
doaj   +1 more source

A Simple Photonics-Based Measurement Method for Microwave DFS and AOA

open access: yesIEEE Photonics Journal, 2022
This article put forwards a simple microwave photonics measurement method for microwave doppler frequency shift (DFS) and angle of arrival (AOA), which obtains the information conveniently and precisely by comparing the frequency and phase shift between ...
Qianqian Jia   +4 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Dominant Loss Mechanisms of Whispering Gallery Mode RF-MEMS Resonators with Wide Frequency Coverage

open access: yesSensors, 2020
This work investigates the dominant energy dissipations of the multi-frequency whispering gallery mode (WGM) resonators to provide an insight into the loss mechanisms of the devices.
Zeji Chen   +6 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Dynamic Markov Model: Password Guessing Using Probability Adjustment Method

open access: yesApplied Sciences, 2021
In password guessing, the Markov model is still widely used due to its simple structure and fast inference speed. However, the Markov model based on random sampling to generate passwords has the problem of a high repetition rate, which leads to a low ...
Xiaozhou Guo   +5 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

open access: yesAdvanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón   +8 more
wiley   +1 more source

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