Results 51 to 60 of about 139,672 (310)
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
NeuAFG: Neural Network-Based Analog Function Generator for Inference in CIM
IEEE AccessResistive Random-Access Memory (RRAM)-based Compute-in-Memory (CIM) architectures offer promising solutions for energy-efficient deep neural network (DNN) inference.
Pengcheng Feng +11 more
doaj +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Charge neutrality level in significantly cation-anion mismatched semiconductors [PDF]
The fundamental bulk and surface electronic properties of a novel class of semiconductors, characterised by a significant mismatch between the size and electro-negativity of the cation and anion (SCAMS), have been investigated.
King, Philip David
core
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
MicromachinesWe propose and demonstrate a novel on-chip optical sampling pulse interleaver based on time mode interleaving. The designed pulse interleaver was fabricated on a 220 nm silicon-on-insulator (SOI) platform, utilizing only one S-shaped delay waveguide ...
Donghe Tu +9 more
doaj +1 more source
Design and Simulation of A Novel Piezoelectric AlN-Si Cantilever Gyroscope
Micromachines, 2018 A novel design of piezoelectric aluminum nitride (AlN)-Si composite cantilever gyroscope is proposed in this paper. The cantilever is stimulated to oscillate in plane by two inverse voltages which are applied on the two paralleled drive electrodes ...
Jian Yang +6 more
doaj +1 more source
Processing organic semiconductors
, 2010 PhDIn recent years, there has been a considerable interest in organic semiconducting materials due to their potential to enable, amongst other things, low-cost flexible opto-electronic applications, such as large-area integrated circuitry boards, light ...
Baklar, Mohammed Adnan
core
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators
Micromachines, 2015 We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface
Jian Yang +6 more
doaj +1 more source