Results 51 to 60 of about 175,328 (304)
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
NeuAFG: Neural Network-Based Analog Function Generator for Inference in CIM
IEEE AccessResistive Random-Access Memory (RRAM)-based Compute-in-Memory (CIM) architectures offer promising solutions for energy-efficient deep neural network (DNN) inference.
Pengcheng Feng +11 more
doaj +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
Advanced Functional Materials, EarlyView.This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Research on Wafer-Level MEMS Packaging with Through-Glass Vias
Micromachines, 2018 A MEMS fabrication process with through-glass vias (TGVs) by laser drilling was presented, and reliability concerns about MEMS packaging with TGV, likes debris and via metallization, were overcome.
Fan Yang +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces [PDF]
MRS Proceedings, 1989 ABSTRACTA recently proposed, new approach to the problem of native defect formation in compound semiconductors is presented. The approach is based on the concept of amphoteric native defects. It is shown that the defect formation energy as well as structure and properties of simple native defects depend on the location of the Fermi level with respect ...
openaire +2 more sources
Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
, 2002 Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of ...
Lebedev, A.A., +6 more
core +1 more source
Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing
Advanced Functional Materials, EarlyView.A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee +10 more
wiley +1 more source
MicromachinesWe propose and demonstrate a novel on-chip optical sampling pulse interleaver based on time mode interleaving. The designed pulse interleaver was fabricated on a 220 nm silicon-on-insulator (SOI) platform, utilizing only one S-shaped delay waveguide ...
Donghe Tu +9 more
doaj +1 more source
Charge neutrality level in significantly cation-anion mismatched semiconductors [PDF]
The fundamental bulk and surface electronic properties of a novel class of semiconductors, characterised by a significant mismatch between the size and electro-negativity of the cation and anion (SCAMS), have been investigated.
King, Philip David
core