Results 61 to 70 of about 175,328 (304)
Ultrafast nonlinear optics in semiconductors [PDF]
, 1993 The nonlinear optical phenomena which occur in semiconductor materials on a femtosecond to picosecond timescale have recently generated much interest, especially in the field of telecommunications where the development of all-optical switching devices ...
Walmsley, M., Walmsley, M
core
III-nitride semiconductors and their modern devices
, 2013 This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments ...
Gil, Bernard +5 more
core +1 more source
Advanced Functional Materials, EarlyView.A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Point defects in III-V compound semiconductors
, 2000 Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The
Chen N +1 more
core
Status and prospects of ohmic contacts on two dimensional semiconductors.
, 2021 In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly.
Xiao, Shaoqing +11 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Nonthermal phase transitions in semiconductors induced by a femtosecond extreme ultraviolet laser pulse [PDF]
, 2013 Part of Focus on High Energy Density Physics. In this paper, we present a novel theoretical approach, which allows the study of nonequilibrium dynamics of both electrons and atoms/ions within free-electron laser excited semiconductors at femtosecond time
Jeschke, H. O. +3 more
core +1 more source
Advanced Functional Materials, EarlyView.The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Design and Simulation of A Novel Piezoelectric AlN-Si Cantilever Gyroscope
Micromachines, 2018 A novel design of piezoelectric aluminum nitride (AlN)-Si composite cantilever gyroscope is proposed in this paper. The cantilever is stimulated to oscillate in plane by two inverse voltages which are applied on the two paralleled drive electrodes ...
Jian Yang +6 more
doaj +1 more source
Dirac‐Source Linear X‐Ray Detection Diode
Advanced Functional Materials, EarlyView.Monolayer graphene imparts near linear current‐voltage behavior to a perovskite X‐ray detection diode, contrasting with conventional diode‐like responses. Exploiting graphene's Dirac dispersion and a Schottky‐like back‐to‐back junction, the device achieves six‐orders‐of‐magnitude dark current suppression while retaining linearity over 200 V, enabling ...
Babar Shabbir +8 more
wiley +1 more source