Results 71 to 80 of about 54,518 (263)

Atomic‐Scale Light Coupling Control in Ultrathin Photonic Membranes

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin photonic nanomembranes provide atomic‐scale control over the coupling between incident light and high‐Q photonic modes, enabling angstrom‐level resonance tuning and strong field confinement. When integrated with TMD monolayers, they further yield enhanced light–matter interactions, offering a versatile platform for advancing quantum photonics,
Chih‐Zong Deng   +8 more
wiley   +1 more source

Covalent Organic Frameworks for Photocatalytic CO2 Reduction: Metal Integration Principles, Strategies and Functions

open access: yesAdvanced Functional Materials, EarlyView.
Covalent organic frameworks (COFs) with metals have been recognized as versatile platforms for photocatalytic CO2 reduction (CO2PRR). Herein, an overview of metal integration strategies for COFs is systematically summarized. Regulatory mechanisms and structure–activity relationships between metal integration and COF‐based CO2PRR are emphasized.
Jie He   +5 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

open access: yesMicromachines, 2015
In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation.
Meng Zhang   +5 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Josephson current in a ferromagnetic semiconductor/semiconductor/ferromagnetic semiconductor junction with superconducting contacts [PDF]

open access: yesJournal of Applied Physics, 2006
On the basis of a general expression for dc Josephson current, we study the Josephson current flowing through a ferromagnetic semiconductor (FS)/semiconductor (SM)/FS trilayer connected to two superconducting electrodes. It is demonstrated that the Josephson current in the junction strongly depends not only on the kinds of holes (the heavy or light) in
openaire   +2 more sources

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

open access: yesAdvanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu   +8 more
wiley   +1 more source

Enhanced Binding Efficiency of Microcantilever Biosensor for the Detection of Yersinia

open access: yesSensors, 2019
A novel microcantilever sensor was batch fabricated for Yersinia detection. The microcantilever surface modification method was optimized by introducing a secondary antibody to increase the number of binding sites.
Xiaochen Liu   +5 more
doaj   +1 more source

Semirelativity in semiconductors: a review [PDF]

open access: yesJournal of Physics: Condensed Matter, 2017
Analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons is reviewed. Energy bands in NGS correspond to special relativity, the latter is analogous to two-band k.p description for NGS. Maximum electron velocity in NGS is u=(okolo)1x 10^8 cm/s corresponding to the light velocity.
openaire   +3 more sources

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

open access: yesAdvanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park   +6 more
wiley   +1 more source

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