Results 91 to 100 of about 139,672 (310)

Semiconductors V. 33, I. 11

, 1999
Semiconductors -- November 1999 Volume 33, Issue 11, pp. 1157-1264 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Spatially inhomogeneous oxygen precipitation in silicon S. V. Bulyarskii, V. V. Svetukhin, and O. V.

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Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Research on Maximum Likelihood Decoding Algorithm and Channel Characteristics Optimization for 4FSK Ultraviolet Communication System Based on Poisson Distribution

Photonics
This study focuses on a 4FSK-modulated ultraviolet (UV) communication system, introducing an innovative symbol-level maximum likelihood decoding approach based on Poisson statistics.
Li Kuang, Yingkai Zhao, Kangjian Li, Xingfa Wang, Linyi Li, Huishi Zhu, Weijie Zhang, Jianguo Liu   +7 more
doaj   +1 more source

Semiconductors V. 32, I. 12

, 1998
Semiconductors -- December 1998 Volume 32, Issue 12, pp. 1257-1330 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb1 – xSnxSe ...

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Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Semiconductors V. 33, I. 07

, 1999
Semiconductors -- July 1999 Volume 33, Issue 7, pp. 707-819 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Influence of native defects on polytypism in SiC A. A.

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Steering Oxygen Activation Pathways via Redox Dual‐Defects in 2D Hydrated WO3 for High‐Yield Singlet Oxygen Evolution

Advanced Functional Materials, EarlyView.
Redox dual‐defects (Cs substitution and O vacancies) in 2D hydrated WO3 steer O2 activation toward selective singlet oxygen evolution. WO‐CO achieves 8.6–15.8 times higher 1O2 production than single‐defect or pristine catalysts, enabling efficient pollutant mineralization via a pathway‐selective photocatalytic mechanism.
Sheng‐Qi Guo, Mingqi Xiao, Fangyuan Zhang, Hui Li, Yuli Jia, Zhenfang Zhang, Liqun Ye, Bo Yang, Tianyi Ma   +8 more
wiley   +1 more source

Semiconductors V. 34, I. 04

, 2000
Semiconductors -- April 2000 Volume 34, Issue 4, pp. 371-494 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamics of Complex Formation and Defect Clustering in Semiconductors S. V. Bulyarskii, V. V. Svetukhin, and P. E.

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Bandgap‐Engineered AlGaAs/GaAs Heterostructures for Wavelength‐Selective Dual‐Polarity Photoelectrochemistry

Advanced Functional Materials, EarlyView.
Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao, Lipin Chen, Jules Courtin, Siyu Lin, Gangri Cai, Yan Zhu, Yoan Léger, Nicolas Bertru, Jinshi Zhao, Charles Cornet   +9 more
wiley   +1 more source

Semiconductors V. 35, I. 09

, 2001
Semiconductors -- September 2001 Volume 35, Issue 9, pp. 981-1116 THIS ISSUE IS DEDICATED TO THE MEMORY OF ANATOLI VASIL'EVICH RZHANOV (1920–2000) A Scientist, a Mentor, a Soldier I. G. Neizvestnyi pp.

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