Results 101 to 110 of about 139,672 (310)

Is It Real Type‐II or S‐Scheme? A Three‐Phase Diagnostic Protocol for Identifying Potentially Mislabeled Heterojunction Photocatalysts

Advanced Functional Materials, EarlyView.
Diagnostic analysis via the heterojunction validation funnel. The funnel illustrates the hierarchical stratification of 30 reported Type‐II systems based on the three‐phase, seven‐step diagnostic framework. Complete validation through all phases is achieved by only 3.3% of systems, while 96.7% lack full mechanistic validation, revealing a pervasive ...
Ki‐Hyun Kim
wiley   +1 more source

Semiconductors V. 36, I. 02

, 2002
Semiconductors -- February 2002 Volume 36, Issue 2, pp. 121-238 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors B. V. Petukhov pp.

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Interface Effects in Ultrathin Silicon on Insulator Films

Advanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici, Gabriele Seguini, Fabiana Taglietti, Roman Gumeniuk, Riccardo Chiarcos, Michele Laus, Johannes Heitmann, Marco Fanciulli, Michele Perego   +8 more
wiley   +1 more source

Semiconductors V. 35, I. 12

, 2001
Semiconductors -- December 2001 Volume 35, Issue 12, pp. 1347-1417 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Paramagnetic Defects in Silicon Carbide Crystals Irradiated with Gamma-Ray Quanta I. V. Ilyin, E. N. Mokhov, and P.

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Coupling Anodic Activity and Stability at Ni‐Based Non‐Oxide Catalysts via Coordinating Alcohol Oxidation and Oxygen Evolution

Advanced Functional Materials, EarlyView.
A cooperative and competitive interrelationship between alcohol oxidation (AOR) and water oxidation (OER) was observed on a typical anode catalyst of Ni2P. In situ Raman spectroscopy and electrochemical analyses revealed a specific complementary mechanism between them, in which OER and AOR critically contribute to the activity and stability of anodic ...
Yong Yan, Xinyu Liu, Yuguo Zhao, Hanwen Jian, Huan Zhou, Riyi Zhang, Dong Wang, Peter Schaaf, Lihua Wang, Guangsheng Guo, Xiayan Wang   +10 more
wiley   +1 more source

Semiconductor Physics and Semiconductor Devices

The Journal of the Institute of Television Engineers of Japan, 1974
Wakui, Kotaro, Mochizuki, Tohru, Aziki, Tsuneo   +2 more
  +9 more sources

Semiconductors V. 37, I. 10

, 2003
Semiconductors -- October 2003 Volume 37, Issue 10, pp. 1127-1242 REVIEW Modification of Hg1 – xCdxTe Properties by Low-Energy Ions K. D. Mynbaev and V. I. Ivanov-Omskii pp.

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Support‐Controlled Reaction Pathways via Dynamic Sulfur‐Mediated Interfaces for Selective Urea Electrolysis

Advanced Functional Materials, EarlyView.
Sulfur‐doped graphitized carbon nanofibers act as adaptive catalyst–support platforms, enabling dynamic sulfur‐mediated reconstruction and strong metal–support interactions. This unique behavior enhances catalyst stability and controls reaction pathways, achieving highly selective urea oxidation (∼92% N2) coupled with efficient hydrogen evolution ...
Melanie Guillén‐Soler, Lucía Vizcaíno‐Anaya, Ahmad Tayyebi, José Manuel Vila‐Fungueiriño, María del Carmen Giménez‐López   +4 more
wiley   +1 more source

Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode

Results in Physics
This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD).
Xinyu Wang, Ming Li, Fanpeng Zeng, Bin Zhang, Lei Ge, Yingxin Cui, Mingsheng Xu, Yu Zhong, Kuan Yew Cheong, Xiaobo Hu, Xiangang Xu, Jisheng Han   +11 more
doaj   +1 more source

Semiconductors V. 39, I. 10

, 2005
Semiconductors -- October 2005 Volume 39, Issue 10, pp. 1111-1233 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys V. G. Deibuk, S. G. Dremlyuzhenko,

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