Results 121 to 130 of about 139,672 (310)
, 2001 Semiconductors -- August 2001 Volume 35, Issue 8, pp. 861-979 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Growth of Fractal Lithium Clusters in Germanium S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, and
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Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing
Advanced Materials, EarlyView.This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long +26 more
wiley +1 more source
Optical Multi-Frequency Discrimination and Phase Identification System Based on On-Chip Dual MZM
PhotonicsA photonic frequency discrimination and phase identification system based on an on-chip dual Mach–Zehnder modulator (MZM) is proposed. By utilizing the power cancellation (PCD) condition, the system achieves high-precision frequency discrimination and ...
Xiang Li +5 more
doaj +1 more source
, 2003 Semiconductors -- March 2003 Volume 37, Issue 3, pp. 239-366 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Temperature Dependence of the Band Structure of 3C, 2H, 4H, and 6H SiC Polytypes S. M. Zubkova, L. N. Rusina, and E.
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Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
Advanced Materials, EarlyView.This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
, 2000 Semiconductors -- September 2000 Volume 34, Issue 9, pp. 983-1102 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Long-Range Effects of Ion Irradiation, Chemical Etching, and Mechanical Grinding on Relaxation of a Solid Solution ...
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Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
Advanced Materials, EarlyView.Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra +19 more
wiley +1 more source
, 2002 Semiconductors -- April 2002 Volume 36, Issue 4, pp. 363-479 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects V. V.
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Advanced Materials, EarlyView.AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll +19 more
wiley +1 more source
Semiconductor Physics and Semiconductor Devices
The Journal of the Institute of Television Engineers of Japan, 1973 Norikazu Hashimoto, Mikio Ashikawa
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