Results 131 to 140 of about 139,672 (310)
, 1999 Semiconductors -- April 1999 Volume 33, Issue 4, pp. 377-481 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Low-temperature relaxation of a solid solution of iron in gallium phosphide E. S. Demidov, V. V. Karzanov, A.
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Advanced Materials, EarlyView.The seminal transformation of a 2D‐COF (SURFCOF‐IMDEA1) into a 2D porous COF (SURFCOF‐IMDEA2) on Au(111) by a sequential C‐C coupling and ladderization triggered by thermal annealing steps at increasing temperatures is reported. Abstract The development of covalent organic frameworks (COFs) is currently a primary objective in materials science, taking ...
Ana Barragán +11 more
wiley +1 more source
, 1998 Semiconductors -- October 1998 Volume 32, Issue 10, pp. 1029-1140 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation ...
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Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives
Advanced Materials, EarlyView.Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi +4 more
wiley +1 more source
, 2002 Semiconductors -- October 2002 Volume 36, Issue 10, pp. 1073-1197 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Thermodynamic Stability of Bulk and Epitaxial Ge1 – xSnx Semiconductor Alloys V. G. Deibuk and Yu. G.
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A Functional 2D Carbon Allotrope Combining Nanoporous Graphene and Biphenylene Segments
Advanced Materials, EarlyView.The synthesis of a novel nanoporous graphene (NPG) is reported with biphenylene segments via thermal fusion of 12‐armchair porous graphene nanoribbons grown on gold surfaces. Characterization using STM, AFM, and DFT reveals low‐defect semiconducting behaviour and tunable band gaps.
Paula Angulo‐Portugal +14 more
wiley +1 more source
, 2003 Semiconductors -- June 2003 Volume 37, Issue 6, pp. 617-739 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Highly Nonequilibrium Conditions on the Stoichiometry of Cadmium Telluride Layer Obtained by Vapor-Phase ...
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Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
, 2004 Semiconductors -- March 2004 Volume 38, Issue 3, pp. 245-367 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized ...
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Directional Flow of Confined Polaritons in CrSBr
Advanced Materials, EarlyView.CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak +10 more
wiley +1 more source