Results 131 to 140 of about 175,328 (304)
Advanced Functional Materials, EarlyView.The APTES linker establishes a permanent interfacial dipole, reducing the work function of n‐GaN from 3.55 to 3.29 eV. This strengthens the built‐in electric field, significantly accelerating hole extraction to drive the oxygen evolution reaction (OER). Ultimately, this tailored charge‐separation architecture achieves a remarkable 4.78‐fold enhancement
Jeong‐Kyun Oh +15 more
wiley +1 more source
Properties OF the Most Important Semiconductors
The article examines the properties of semiconductors, the history of the creation of semiconductors and the semiconductors widely used in the field of technology are covered in ...
Atayevich, T. A. (Turayev) +1 more
core +1 more source
Advanced Functional Materials, EarlyView.Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee +9 more
wiley +1 more source
Molecular Bridges for 2D Nanomaterials
Advanced Functional Materials, EarlyView.Molecular cross‐linking provides a versatile strategy to engineer interfaces in 2D materials. By tuning the linker backbone, binding mode, and interflake spacing, molecular bridges can regulate charge transport, mechanical integrity, chemical functionality, and processing.
Yudhajit Bhattacharjee +3 more
wiley +1 more source
How the Porous Transport Layer Dictates Membrane Electrode Assembly Performance of IrO2 Catalysts
Advanced Functional Materials, EarlyView.The Schottky barrier formed at the catalyst | PTL interface critically governs both the initial performance and long‐term durability of the PEMWE, and its magnitude is dictated by the catalyst's work function. This limitation can be resolved by combining a rutile IrO2 core for efficient electron transfer with an amorphous IrOx shell for high surface ...
Hyeseong Jeon +6 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva +5 more
wiley +1 more source
Polycrystalline Semiconductors VIII
, 2005 Polycrystalline Semiconductors ...
Nickel, N.H. [Ed.]
core +1 more source
, 2020 Unirradiated and γ-irradiated (average energy E = 1.25 MeV and dose Φ = 2.41 MGy) chalcogenide glassy semiconductors (CGSs) As2S3 and Ge15.8As21S63.2 are studied by positron annihilation lifetime spectroscopy (PALS) and Doppler broadening of the 0.511 ...
Šauša O. +3 more
core
Advanced Functional Materials, EarlyView.Scalable stencil lithography enables resist‐free fabrication of high‐index Ge metasurfaces for mid‐infrared molecular fingerprinting. Reversible thermo‐optic tuning provides post‐fabrication spectral control for precise resonance–vibration mode alignment, enabling enhanced molecular fingerprinting of microplastic particles.
Shovasis Kumar Biswas +6 more
wiley +1 more source
, 1994 JESSI Application Project AE10 aims at the transfer of the results from EUREKA 95 into system components for HDTV receivers. The European transmission standard HDMAC is base for the development of IC design flows, design libraries and test methods in ...
Philips Semiconductors, Hamburg (Germany). Roehren- und Halbleiterwerke +1 more
core