Results 81 to 90 of about 139,672 (310)
Exciton Binding Energy of Phosphorescent Emitter Molecules in Organic Light‐Emitting Diodes
Advanced Functional Materials, EarlyView.Energy level alignment is key to efficient OLED design, yet determining LUMO energies remains challenging. A methodology based on field‐induced dissociation and kinetic Monte Carlo simulations is presented to extract LUMO energies of iridium‐based phosphorescent emitters from their exciton binding energy.
Hiroki Tomita +6 more
wiley +1 more source
Point defects in III-V compound semiconductors
, 2000 Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The
Chen N +1 more
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Ultrasensitive Anti‐Stokes Luminescence Thermometry in Transition Metal Dichalcogenide Monolayers
Advanced Functional Materials, EarlyView.We demonstrate a highly sensitive nanothermometer using anti‐Stokes photoluminescence, also known as photoluminescence upconversion (UPL), in monolayer tungsten disulfide. A strong resonantly enhanced UPL is observed, confirming the central role of optical phonons in the PL upconversion mechanism.
Sharada Nagarkar +6 more
wiley +1 more source
, 2001 Semiconductors -- March 2001 Volume 35, Issue 3, pp. 243-369 REVIEWS Electrical and Optical Properties of Pristine and Polymerized Fullerenes T. L. Makarova pp.
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Advanced Functional Materials, EarlyView.Terminal groups on Cu porphyrins modulate the electronic states of single‐atom Cu centers through a long‐range electronic effect, without altering the Cu coordination geometry. Meanwhile, a multi‐descriptor framework is established that incorporates porphyrin regulation, hybrid catalyst properties, and CO2 photoreduction capabilities.
Yi Zhang +13 more
wiley +1 more source
, 1999 Semiconductors -- February 1999 Volume 33, Issue 2, pp. 107-222 REVIEW Deep level centers in silicon carbide: A review A. A. Lebedev Full Text: PDF (404 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Optically active layers ...
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Advanced Functional Materials, EarlyView.A gradient M/MOx (M = Sn, Cu, Cd) synergistic interphase was constructed on Al via a one‐step displacement reaction. This interphase leverages high aluminophilicity and ion‐buffering capability to accelerate desolvation, enhance Al3+ transport, and suppress side reactions, enabling ultrastable symmetric cell operation at 0.05 mA cm−2 for 1800 h with an
Shuang Cheng +7 more
wiley +1 more source
Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications
Micromachines, 2015 In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation.
Meng Zhang +5 more
doaj +1 more source
, 2000 Semiconductors -- February 2000 Volume 34, Issue 2, pp. 123-249 REVIEW Modification of Semiconductors with Proton Beams. A Review V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov pp. 123-140 Full Text: PDF (203 kB) ATOMIC STRUCTURE AND
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Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC
Advanced Functional Materials, EarlyView.The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi +9 more
wiley +1 more source