Results 41 to 50 of about 139,672 (310)

Ferromagnetic Semiconductors. [PDF]

open access: yesChemInform, 2002
18 pages, 8 figures; special issue of Semicon. Sci. Technol.
openaire   +2 more sources

A Dislocation Perspective on Strength and Toughness in Ceramics

open access: yesAdvanced Engineering Materials, EarlyView.
Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

open access: yesAdvanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol   +5 more
wiley   +1 more source

Dominant Loss Mechanisms of Whispering Gallery Mode RF-MEMS Resonators with Wide Frequency Coverage

open access: yesSensors, 2020
This work investigates the dominant energy dissipations of the multi-frequency whispering gallery mode (WGM) resonators to provide an insight into the loss mechanisms of the devices.
Zeji Chen   +6 more
doaj   +1 more source

Dynamic Markov Model: Password Guessing Using Probability Adjustment Method

open access: yesApplied Sciences, 2021
In password guessing, the Markov model is still widely used due to its simple structure and fast inference speed. However, the Markov model based on random sampling to generate passwords has the problem of a high repetition rate, which leads to a low ...
Xiaozhou Guo   +5 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

Research on Wafer-Level MEMS Packaging with Through-Glass Vias

open access: yesMicromachines, 2018
A MEMS fabrication process with through-glass vias (TGVs) by laser drilling was presented, and reliability concerns about MEMS packaging with TGV, likes debris and via metallization, were overcome.
Fan Yang   +6 more
doaj   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

open access: yesAdvanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand   +5 more
wiley   +1 more source

Home - About - Disclaimer - Privacy