Results 91 to 100 of about 123,696 (336)

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source

Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM

Materials Research Express, 2022
Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes.
Jiaping Li, Xin Zhou, Liu Xu, Jiale Wang, Binhe Wu, Chunrui Wang   +5 more
doaj   +1 more source

High-Quality Single-Crystalline β-Ga₂O₃ Nanowires: Synthesis to Nonvolatile Memory Applications

Nanomaterials, 2021
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories.
Chandrasekar Sivakumar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin, Mon-Shu Ho   +5 more
doaj   +1 more source

Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications [PDF]

A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior.
Lee, JS, Un-Bin Han
core   +1 more source

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

, 2018
The human brain can perform advanced computing tasks, such as learning, recognition, and cognition, with extremely low power consumption and low frequency of neuronal spiking.
D. Ielmini
semanticscholar   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Bridging the gap between nanowires and Josephson junctions: a superconducting device based on controlled fluxon transfer across nanowires [PDF]

, 2018
The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and low power ...
Berggren, Karl K., Butters, Brenden A., Colangelo, Marco, McCaughan, Adam N., Onen, Murat, Toomey, Emily   +5 more
core   +2 more sources

Nanoscale Mapping of Plasmonic Charge Transport in Nano‐Resonators Based on Resistive Switching Materials

Advanced Functional Materials, EarlyView.
In this strategy, a conductive nano‐probe is employed to induce nanoscale phase transitions and map the nanoscale conductivity and trap density of GST films. By utilizing the contrasting properties of phase‐change states, nano‐resonators are fabricated that exhibit plasmonic conduction and dramatically different transport characteristics.
Sunwoo Bang, Seunghyo Park, Shashank Shekhar, Yuhyeon Oh, Seunghun Hong   +4 more
wiley   +1 more source

Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

AIP Advances, 2012
Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAMs. This study revealed that one of the main factors causing variation is the presence of multiple filaments in each memory cell.
Hayato Tanaka, Kentaro Kinoshita, Masataka Yoshihara, Satoru Kishida   +3 more
doaj   +1 more source