Results 91 to 100 of about 8,899 (300)

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth [PDF]

, 2018
Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices.
ji-min song, Lee, JS
core   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Advanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim, Nahyun Kim, Seok Hee Hong, Ho Jin Lee, Jin Suk Oh, Jae Seong Park, Tae Geun Kim   +6 more
wiley   +1 more source

Resistive Switching of Plasma–Treated Zinc Oxide Nanowires for Resistive Random Access Memory

Nanomaterials, 2016
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs.
Yunfeng Lai, Wenbiao Qiu, Zecun Zeng, Shuying Cheng, Jinling Yu, Qiao Zheng   +5 more
doaj   +1 more source

Unraveling the origin of resistive switching behavior in organolead halide perovskite based memory devices

AIP Advances, 2020
This study investigates the operation mechanisms of organolead halide perovskite based resistive memory cells and explores the device architectures that could ensure high memory endurance and high fabrication reproducibility.
Xiaojing Wu, Hui Yu, Jie Cao
doaj   +1 more source

Nonvolatile resistive switching memory based on monosaccharide fructose film

, 2021
In this paper, we report resistive random-access memory (RRAM) based on a monosaccharide—fructose for nonvolatile memory in biocompatible and green electronics.
Xing, Yuan, Cheong, Kuan Yew, Yuan Xing, Zhao, Feng, Kuan Yew Cheong, Sueoka, Brandon, Brandon Sueoka, Feng Zhao   +7 more
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

Advanced Functional Materials, EarlyView.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen, Chi Cong Nguyen, Tran Bach Dang, Phuoc Thien Phan, Jordan Thorpe, Michael Listyawan, Nhat Minh Doan, Sinuo Zhao, Hongru Chen, Trung Thien Hoang, Mingsheng Xu, Jisheng Han, Thanh Nho Do, Adam Hill, Timothée Mouterde, Hoang‐Phuong Phan   +15 more
wiley   +1 more source

Unipolar resistive switching and mechanism in Gd-doped-TiO2-based resistive switching memory devices

, 2011
Gd-doped-TiO2-based resistive switching random-access memory (RRAM) devices with MOM structure of top metal electrode (W, Ti)/Gd-doped-TiO2/Pt/Ti/SiO2/Si were fabricated, and resistive switching characteristics were investigated.
Liu, L. F., X Zhang, Y Wang, J F Kang, Kang, J. F., Zhang, X., D D Han, Han, D. D., Liu, X. Y., L F Liu, Y S Chen, Wang, Y., X Y Liu, Chen, Y. S.   +13 more
core   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices

, 2022
Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure.
Swapan Majumdar (2277838), Surajit Sarkar (8671000), Farhana Yasmin Rahman (13133565), Debajyoti Bhattacharjee (829884), Syed Arshad Hussain (1609729), Hritinava Banik (10530738)   +5 more
core   +1 more source