Results 61 to 70 of about 8,899 (300)
Analysis on switching mechanism of graphene oxide resistive memory device [PDF]
Recently, a flexible resistive switching memory device using graphene oxide was successfully demonstrated. In this work, the new findings on the switching mechanism of the graphene oxide memory are presented through a comprehensive study on the switching
Kim, Sang Ouk +7 more
core +1 more source
Soft Mechanical‐Electrical Logic Using Liquid Metal‐Filled 3D‐Printed Architectures
We present 3D‐printed soft mechanical–electrical logic elements that use liquid metal–filled silicone tubes actuated by thermoplastic polyurethane/polylactic acid (TPU/PLA) architectures to produce Boolean operations. Complementary normally open and normally closed unit cells perform repeatable binary transitions and can be combined into more complex ...
Christoph Lehmann +2 more
wiley +1 more source
Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from
Bohee Hwang, Jang-Sik Lee
doaj +1 more source
Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov +7 more
doaj +1 more source
Coarse‐grained (left) and atomistic (right) models of the shape memory polymer ESTANE ETE 75DT3 are shown schematically. The two representations bridge molecular detail and mesoscopic description. Both models capture shape memory behavior, linking segmental mobility and conformational relaxation of anisotropic chains to macroscopic recovery, and ...
Fathollah Varnik
wiley +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit.
Sanchali Mitra +2 more
doaj +1 more source
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Silicon compatible Sn-based resistive switching memory
Comprehensive criterion for electrode metal selection applicable to cationic filamentary devices enables a CMOS compatible Sn-based resistive switching memory.
Kiran Sasikumar +13 more
core +1 more source
Laser‐Induced Graphene from Waste Almond Shells
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source

