Results 61 to 70 of about 872 (214)
Advanced Functional Materials, EarlyView.ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
Quantum Dots for Resistive Switching Memory and Artificial Synapse
NanomaterialsMemristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim +2 more
doaj +1 more source
A graphene integrated highly transparent resistive switching memory device
APL Materials, 2018 We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the ...
Sita Dugu +5 more
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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Nanoscale Research Letters, 2019 Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
doaj +1 more source
Recent advances in organic‐based materials for resistive memory applications
InfoMat, 2020 With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory ...
Yang Li +9 more
doaj +1 more source
In-memory computing with resistive switching devices [PDF]
Nature Electronics, 2018 Modern computers are based on the von Neumann architecture in which computation and storage are physically separated: data are fetched from the memory unit, shuttled to the processing unit (where computation takes place) and then shuttled back to the memory unit to be stored. The rate at which data can be transferred between the processing unit and the
Ielmini, Daniele, Wong, H. -S. Philip
openaire +2 more sources
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Scientific Reports, 2017 Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom +7 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan +16 more
wiley +1 more source
AIP Advances, 2020 This study investigates the operation mechanisms of organolead halide perovskite based resistive memory cells and explores the device architectures that could ensure high memory endurance and high fabrication reproducibility.
Xiaojing Wu, Hui Yu, Jie Cao
doaj +1 more source