Results 61 to 70 of about 123,696 (336)
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices [PDF]
, 2014 Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated.
Bard A. J. +5 more
core +1 more source
Hijacking emergency granulopoiesis: Neutrophil ontogeny and reprogramming in cancer
Molecular Oncology, EarlyView.Neutrophils are highly plastic innate immune cells; their functions in cancer extend beyond the tumour microenvironment. This Review summarises current understanding of neutrophil maturation and heterogeneity and highlights tumour‐induced granulopoiesis as a systemic programme that expands immature, immunosuppressive neutrophils via tumour‐derived ...
Gabriela Marinescu, Yi Feng
wiley +1 more source
Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Advances in Condensed Matter Physics, 2015 HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu +4 more
doaj +1 more source
, 2021 Bio-organic, as one of the sustainable and bioresorbable materials, has been used as an active thin film in producing resistive switching random access memory (RRAM) due to its specialized properties.
K. Cheong +3 more
semanticscholar +1 more source
A Robust Adaptive One‐Sample‐Ahead Preview Super‐Twisting Sliding Mode Controller
International Journal of Adaptive Control and Signal Processing, EarlyView.Block Diagram of the Robust Adaptive One‐Sample‐Ahead Preview Super‐Twisting Sliding Mode Controller. ABSTRACT This article introduces a discrete‐time robust adaptive one‐sample‐ahead preview super‐twisting sliding mode controller. A stability analysis of the controller by Lyapunov criteria is developed to demonstrate its robustness in handling both ...
Guilherme Vieira Hollweg +5 more
wiley +1 more source
Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses
, 2013 Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core +1 more source
Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory [PDF]
, 2019 Mixed halide perovskite materials are actively researched for solar cells with high efficiency. Their hysteresis which originates from the movement of defects make perovskite a candidate for resistive switching memory devices.
Gu, CW, Hwang, BH, LEE, DONGHWA, Lee, JS
core +1 more source
Deterministic Detection of Single Ion Implantation
Advanced Engineering Materials, EarlyView.Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead +6 more
wiley +1 more source
Low-power resistive random access memory by confining the formation of conducting filaments
AIP Advances, 2016 Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang +4 more
doaj +1 more source
Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor
Nanomaterials, 2022 Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their ...
Tangyou Sun +9 more
doaj +1 more source