Results 61 to 70 of about 2,200,736 (300)

Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices [PDF]

Journal of the Korean Physical Society, 2016
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 ...
Yun, Min Ju, Kim, Sungho, Kim, Hee-Dong
openaire   +2 more sources

Electrochemically prepared oxides for resistive switching memories

Faraday Discussions, 2019
Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.
A. Zaffora, F. Di Quarto, H. Habazaki, I. Valov, M. Santamaria   +4 more
openaire   +5 more sources

Low-power resistive random access memory by confining the formation of conducting filaments

AIP Advances, 2016
Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang, Tzu-Hsien Shen, Lan-Hsuan Lee, Cheng-Yen Wen, Si-Chen Lee   +4 more
doaj   +1 more source

Data related to the nanoscale structural and compositional evolution in resistance change memories

Data in Brief, 2018
The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a
Taimur Ahmed, Sumeet Walia, Edwin L.H. Mayes, Rajesh Ramanathan, Paul Guagliardo, Vipul Bansal, Madhu Bhaskaran, J. Joshua Yang, Sharath Sriram   +8 more
doaj   +1 more source

Arginine methylation as a regulatory ratchet in cancer: From substrate selection to malignant‐state stabilization

Molecular Oncology, EarlyView.
Arginine methylation can be viewed as a persistence‐prone post‐translational modification regulated by a network of PRMTs. Competitive and compensatory interactions among PRMTs can redistribute methylation across substrate pools shaped by sequence, structural, spatial, and environmental layers, reinforcing RNA‐processing, chromatin, and signaling ...
So Hyun Kwon, Ji Min Lee
wiley   +1 more source

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Scientific Reports, 2017
Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from
Bohee Hwang, Jang-Sik Lee
doaj   +1 more source

Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films

Nanomaterials, 2020
We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition.
Roman V. Tominov, Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Aleksandr A. Fedotov, Evgeny G. Zamburg, Vladimir A. Smirnov, Oleg A. Ageev   +7 more
doaj   +1 more source

Is an Apple an Orange? A Large Language Model Benchmark for Candidate Term Extraction and Subclass Decisions Against Upper Ontologies in Engineering and Materials Science

Advanced Engineering Materials, EarlyView.
Building machine‐readable vocabularies for materials science is slow, expert‐driven work. This study benchmarks 13 large language models on two of its first steps: finding candidate terms in engineering articles and deciding where they belong in a class hierarchy.
Thomas Bjarsch, Maximilian Holland, Klaus Drechsler, Johannes Schilp   +3 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Multistate Resistive Switching Memory for Synaptic Memory Applications [PDF]

Advanced Materials Interfaces, 2016
Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory
Hota, Mrinal Kanti, Hedhili, Mohamed N., Wehbe, Nimer, McLachlan, Martyn A., Alshareef, Husam N.   +4 more
openaire   +2 more sources