Results 41 to 50 of about 123,696 (336)

Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films.

ACS Applied Materials and Interfaces, 2020
Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices.
Bing Sun, Xinle Li, T. Feng, S. Cai, Teresa L. Chen, Chenhui Zhu, Jian Zhang, Dong Wang, Yi Liu   +8 more
semanticscholar   +1 more source

First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]

, 2011
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck, Besland, Besland, Cario, Chapert, Dubost, Elissalde, Goux, Huai, Huai, Kim, Liu, Mangin, Modera, Nishimura, Stadelmann, Szot, Vaju, Vaju, Waser   +19 more
core   +3 more sources

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

ACS Applied Materials and Interfaces, 2020
The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga2O3/ZnO composite film as the dielectrics was investigated.
Xing Li, Jian-Guo Yang, Hongping Ma, Yu-Hang Liu, Zhigang Ji, Wei Huang, X. Ou, David-Wei Zhang, H. Lu   +8 more
semanticscholar   +1 more source

Multistate resistive switching behaviors for neuromorphic computing in memristor

Materials Today Advances, 2021
Conventional Von Neumann computing systems encounter increasing challenges in the big-data era due to the constraints by the separated data storage and processing. Resistive random-access memory provides dual functionalities of data storage and computing
B. Sun, S. Ranjan, G. Zhou, T. Guo, Y. Xia, L. Wei, Y.N. Zhou, Y.A. Wu   +7 more
doaj   +1 more source

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

Advanced Electronic Materials, 2018
Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang, Han‐Hyeong Choi, Sung Hoon Paik, Jai Kyeong Kim, Seungjun Chung, Jong Hyuk Park   +5 more
doaj   +1 more source

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Nanoscale Research Letters, 2022
Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses.
Chandreswar Mahata, Muhammad Ismail, Myounggon Kang, Sungjun Kim   +3 more
doaj   +1 more source

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM [PDF]

, 2017
The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed
Brunell, IF, Chalker, PR, Dawson, K, Dhanak, VR, Gibbon, JT, Guo, Y, Hall, S, Li, H, Potter, RJ, Robertson, J, Sedghi, N, Zhang, JF, Zhang, W   +12 more
core   +1 more source

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory [PDF]

, 2015
Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps.
Byun, Kwangsub, Chang, Yao-Feng, Fowler, Burt, Lee, Jack C., Zhou, Fei   +4 more
core   +1 more source

Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

AIP Advances, 2012
Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou, Hock Guan Ong, Lu You, Weigang Chen, Hui Ding, Hiroshi Funakubo, Lang Chen, Junling Wang   +7 more
doaj   +1 more source

Advanced physical modeling of SiOx resistive random access memories [PDF]

, 2016
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen, Buckwell, Mark, Gao, David, Kenyon, Anthony, Mehonic, Adnan, Montesi, Luca, Sadi, Toufik, Shluger, Alexander, Wang, Liping   +8 more
core   +1 more source