Results 41 to 50 of about 8,899 (300)
Resistive switching memory device [PDF]
, 2023 Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode.
core
Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
AIP Advances, 2012 Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou +7 more
doaj +1 more source
Stretchable and Wearable Resistive Switching Random‐Access Memory [PDF]
Advanced Intelligent Systems, 2020 In the era of big data, with the development and application of 5G technology, artificial intelligence technology, and wearable electronics, the acquisition, storage, search, sharing, analysis, and even visual presentation require huge amounts of data in storage and processing at any time. This propounds a strong demand for the stretchable and wearable
Qiuwei Shi +3 more
openaire +2 more sources
, 2019 Nowadays the development of natural biomaterials as promising building polymers for flexible, biodegradable, biocompatible and environmentally friendly electronic devices is of great interest.
Sun, Qijun +7 more
core +1 more source
In-memory computing with resistive switching devices [PDF]
Nature Electronics, 2018 Modern computers are based on the von Neumann architecture in which computation and storage are physically separated: data are fetched from the memory unit, shuttled to the processing unit (where computation takes place) and then shuttled back to the memory unit to be stored. The rate at which data can be transferred between the processing unit and the
Ielmini, Daniele, Wong, H. -S. Philip
openaire +2 more sources
Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
AIP Advances, 2017 Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching ...
Zijin Wu +7 more
doaj +1 more source
Oxides based resistive switching memories
Oxide-based Materials and Devices XII, 2021 This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher density, low power consumption, high speed and reliable memories are needed by manufacturers.
Kalem, Seref +7 more
openaire +3 more sources
Modeling Electrical Switching Behavior of Carbon Resistive Memory [PDF]
IEEE Access, 2020 The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory switching mechanism of amorphous carbon media remains mysterious and thus severely restricted its application prospect.
Qiaofeng Ou +2 more
openaire +2 more sources
, 2018 The in‐depth understanding of ions' generation and movement inside all‐inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited.
Ziyu Lv +27 more
core +1 more source
Hijacking emergency granulopoiesis: Neutrophil ontogeny and reprogramming in cancer
Molecular Oncology, EarlyView.Neutrophils are highly plastic innate immune cells; their functions in cancer extend beyond the tumour microenvironment. This Review summarises current understanding of neutrophil maturation and heterogeneity and highlights tumour‐induced granulopoiesis as a systemic programme that expands immature, immunosuppressive neutrophils via tumour‐derived ...
Gabriela Marinescu, Yi Feng
wiley +1 more source