Results 41 to 50 of about 18,321 (309)

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines, 2020
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao, Ping Song, Huiling Gai, Yi Li, Chunpeng Ai, Dianzhong Wen   +5 more
doaj   +1 more source

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Advanced Electronic Materials, 2023
In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achieving high‐speed and ...
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi   +5 more
doaj   +1 more source

Synergies of electrochemical metallization and valance change in all-inorganic perovskite quantum dots for resistive switching

, 2018
The in‐depth understanding of ions' generation and movement inside all‐inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited.
Ziyu Lv, Wang, Zhanpeng, Jinrui Chen, Liao, Qiufan, Wang, Yan, Roy, Vellaisamy A.L., Zongxiang Xu, Haiquan Shan, Yan Wang, Chen, Jinrui, Yu-Jia Zeng, Shan, Haiquan, Zhou, Li, Li Zhou, Vellaisamy A. L. Roy, Yu‐Jia Zeng, Qiufan Liao, Xu, Zongxiang, Xiaoli Chen, Zeng, Yu-Jia, Zhanpeng Wang, Su‐Ting Han, Su-Ting Han, Lv, Ziyu, Han, Su-Ting, Zhou, Ye, Ye Zhou, Chen, Xiaoli   +27 more
core   +1 more source

Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Results in Physics, 2020
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj   +1 more source

Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices [PDF]

Journal of the Korean Physical Society, 2016
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 ...
Yun, Min Ju, Kim, Sungho, Kim, Hee-Dong
openaire   +2 more sources

Resistive Switching of GaAs Oxide Nanostructures [PDF]

Materials, 2020
The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm−3.
Vadim Avilov, Nikita Polupanov, Roman Tominov, Maxim Solodovnik, Boris Konoplev, Vladimir Smirnov, Oleg Ageev   +6 more
openaire   +2 more sources

Therapeutic Apheresis in Nigeria: A Multi‐Center Summary of Abstracts From the Inaugural Nigerian Society for Apheresis Scientific Meeting

Therapeutic Apheresis and Dialysis, EarlyView.
ABSTRACT Background Therapeutic apheresis (TA) is an established treatment modality for hematologic, neurologic, and immunologic disorders, yet access remains severely limited in sub‐Saharan Africa. Donor apheresis, including platelet apheresis collection from healthy donors, represents an important complementary modality supporting blood product ...
Nosa Bazuaye, Chimezie Okwuonu, Evelyn Idam, Folasade Adelekan‐Popoola, Shakirat Gold‐Olufadi, Olufunto Olufela Kalejaiye, Abdullateef Ogala, Zinnah Aloziem, Blossom Amamchukwu, Patience Elimia, Mkpoikanabasi Obot‐Obot, Henry Mbakwe, Praises Maduagwuna, Olatunji Akinrodoye, Chiamaka Anyanwu, Benjamin Anyanwu, Adedamola Akinsiku, Oluwatoyin A. Akinsiku, Muzamil O. Hassan, Fatiu A. Arogundade, Olalekan E. Ojo, Homayemem Weli, Jesupelumi Adenihun, Aderemi Adelaja, Ebun Bamgboye, Olalekan Olatise, Ade E. Faponle, Ayoola Odeyemi, Michael Muoka, Stephen Asaolu, Qudrat Busari, Blessing Dawudu, Michael Naiyeju, Rasheed A. Balogun   +33 more
wiley   +1 more source

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Frontiers in Nanotechnology, 2023
The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman, A. Jaman, A. S. Goossens, A. S. Goossens, J. J. L. van Rijn, L. van der Zee, T. Banerjee, T. Banerjee   +7 more
doaj   +1 more source

Resistive‐switching and current‐conduction mechanisms in F8BT polymer resistive switch

Micro & Nano Letters, 2016
Poly[(9,9‐di‐n‐octylfluorenyl‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,8‐diyl)] (F8BT) polymer has been investigated to elucidate the resistive‐switching properties in a sandwiched structure of indium tin oxide (ITO)/F8BT/aluminium (Al). An active layer of F8BT polymer was deposited on the ITO‐coated polyethylene terepthalate through spin coating ...
Muhammad N. Awais, Maria Mustafa, Muhammad N. Shehzad, Umer Farooq, Mirza T. Hamayun, Kyung H. Choi   +5 more
openaire   +1 more source

Resistance Switching in Polycrystalline C12A7 Electride

Micromachines, 2022
The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e−) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy. The electride state was confirmed by conductivity measurements and EPR using a characteristic signal from F+—like ...
Ivan D. Yushkov, Gennadiy N. Kamaev, Vladimir A. Volodin, Pavel V. Geydt, Aleksandr V. Kapishnikov, Alexander M. Volodin   +5 more
openaire   +3 more sources