Results 41 to 50 of about 76,331 (301)
, 2009 We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu +7 more
core +1 more source
High speed chalcogenide glass electrochemical metallization cells with various active metals [PDF]
, 2018 We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al).
A Baset Gholizadeh +12 more
core +2 more sources
Mechanism for bipolar resistive switching in transition metal oxides
, 2010 We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale.
Acha, C. +5 more
core +1 more source
Results in Physics, 2020 Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj +1 more source
Tuning the resistive switching properties of TiO2-x films [PDF]
, 2015 We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively
Ghenzi, Néstor +5 more
core +2 more sources
Resistive Switching of GaAs Oxide Nanostructures [PDF]
Materials, 2020 The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm−3.
Vadim Avilov +6 more
openaire +2 more sources
Mapping the evolution of mitochondrial complex I through structural variation
FEBS Letters, EarlyView.Respiratory complex I (CI) is crucial for bioenergetic metabolism in many prokaryotes and eukaryotes. It is composed of a conserved set of core subunits and additional accessory subunits that vary depending on the organism. Here, we categorize CI subunits from available structures to map the evolution of CI across eukaryotes. Respiratory complex I (CI)
Dong‐Woo Shin +2 more
wiley +1 more source
Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)
Frontiers in Nanotechnology, 2023 The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman +7 more
doaj +1 more source
Computational Capacity and Energy Consumption of Complex Resistive Switch Networks [PDF]
, 2015 Resistive switches are a class of emerging nanoelectronics devices that exhibit a wide variety of switching characteristics closely resembling behaviors of biological synapses.
Alireza Goudarzi +4 more
core +4 more sources
Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices [PDF]
Journal of the Korean Physical Society, 2016 The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics were observed, and the set and reset states were measured to be as low as 7 uA and 4 uA, respectively, at VREAD = 1 ...
Yun, Min Ju, Kim, Sungho, Kim, Hee-Dong
openaire +2 more sources