Results 21 to 30 of about 76,331 (301)

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air [PDF]

, 2014
An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices
Chang, Yao-Feng, Chen, Yen-Ting, Fowler, Burt W., Lee, Jack C., Wang, Yanzhen, Xue, Fei, Zhou, Fei   +6 more
core   +1 more source

Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

AIP Advances, 2012
Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou, Hock Guan Ong, Lu You, Weigang Chen, Hui Ding, Hiroshi Funakubo, Lang Chen, Junling Wang   +7 more
doaj   +1 more source

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Journal of Materiomics, 2018
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu, Lai-Mun Wong, Shijie Wang, Kaiyang Zeng   +3 more
doaj   +1 more source

Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

Materials Research Express, 2021
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj   +1 more source

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

IEEE Journal of the Electron Devices Society, 2021
A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN ...
L. Begon-Lours, M. Halter, Y. Popoff, Z. Yu, D. F. Falcone, D. Davila, V. Bragaglia, A. La Porta, D. Jubin, J. Fompeyrine, B. J. Offrein   +10 more
doaj   +1 more source

Switching Power Universality in Unipolar Resistive Switching Memories [PDF]

Scientific Reports, 2016
AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin, Jung, Kyooho, Kim, Yongmin, Jo, Yongcheol, Cho, Sangeun, Woo, Hyeonseok, Lee, Seongwoo, Inamdar, A. I., Hong, Jinpyo, Lee, Jeon-Kook, Kim, Hyungsang, Im, Hyunsik   +11 more
openaire   +3 more sources

CuO/ZnO memristors via oxygen or metal migration controlled by electrodes

AIP Advances, 2016
We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors.
Yong Huang, Zihan Shen, Ye Wu, Meiqiu Xie, Yanqiang Hu, Shufang Zhang, Xiaoqin Shi, Haibo Zeng   +7 more
doaj   +1 more source

Characterization and modeling of resistive switching phenomena in IGZO devices

AIP Advances, 2022
This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the ...
G. Carvalho, M. E. Pereira, C. Silva, J. Deuermeier, A. Kiazadeh, V. Tavares   +5 more
doaj   +1 more source

Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Results in Physics, 2019
With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li, Bai Sun, Wentao Hou, Jiao Chen, Pingping Zheng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Guoqiang Fu   +8 more
doaj   +1 more source

Insight into physics-based RRAM models – review

The Journal of Engineering, 2019
This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that ...
Arya Lekshmi Jagath, Chee Hock Leong, T. Nandha Kumar, HaiderA.F. Almurib   +3 more
doaj   +1 more source