Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]
, 2010 Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken +9 more
core +2 more sources
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Micromachines, 2020 In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer.
Junhyeok Choi, Sungjun Kim
doaj +1 more source
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source
Characterization and modeling of resistive switching phenomena in IGZO devices
AIP Advances, 2022 This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the ...
G. Carvalho +5 more
doaj +1 more source
ANODIC FORMATION OF HfO2 NANOSTRUCTURE ARRAYS FOR RESISTIVE SWITCHING APPLICATION
, 2020 Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability,
Kamnev, Kirill +7 more
core +1 more source
Switching Power Universality in Unipolar Resistive Switching Memories [PDF]
Scientific Reports, 2016 AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin +11 more
openaire +3 more sources
Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
AIP Advances, 2012 Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou +7 more
doaj +1 more source
Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
doaj +1 more source
Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
Advanced Electronic Materials, 2023 Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain ...
Hongyi Dou +8 more
doaj +1 more source
Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
Materials Research Express, 2021 In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj +1 more source