Results 21 to 30 of about 9,065 (265)
Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films
Journal of Materiomics, 2018 Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials promising for the next-generation memory-resistance random access memory (ReRAM).
Wanheng Lu +3 more
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Characterization and modeling of resistive switching phenomena in IGZO devices
AIP Advances, 2022 This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the ...
G. Carvalho +5 more
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Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
Materials Research Express, 2021 In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
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Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
IEEE Journal of the Electron Devices Society, 2021 A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN ...
L. Begon-Lours +10 more
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CuO/ZnO memristors via oxygen or metal migration controlled by electrodes
AIP Advances, 2016 We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors.
Yong Huang +7 more
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Results in Physics, 2019 With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li +8 more
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Physical Review X, 2022 Resistive switching is of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V_{3}O_{5}, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition above ...
Coline Adda +10 more
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Insight into physics-based RRAM models – review
The Journal of Engineering, 2019 This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that ...
Arya Lekshmi Jagath +3 more
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Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
AIP Advances, 2018 Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories ...
J. Fan +5 more
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Materials Research Express, 2020 Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail +6 more
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