Scientific Reports, 2021 TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
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Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Advanced Electronic Materials, 2023 Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency.
Yang Li +7 more
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Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]
, 2017 Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu +71 more
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Nanomaterials, 2021 In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Sobia Ali Khan +5 more
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Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
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Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory [PDF]
, 2019 A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements.
Deswal, Sweety +3 more
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Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Micromachines, 2020 In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer.
Junhyeok Choi, Sungjun Kim
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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
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How ligands affect resistive switching in solution-processed HfO2 nanoparticle assemblies [PDF]
, 2018 Advancement of resistive random access memory (ReRAM) requires fully understanding the various complex, defect-mediated transport mechanisms to further improve performance.
Wang, Jiaying +6 more
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Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
Advanced Electronic Materials, 2023 Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain ...
Hongyi Dou +8 more
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