Results 11 to 20 of about 18,321 (309)
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory [PDF]
Materials, 2017 Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar ...
Sungjun Kim +5 more
openaire +4 more sources
Multistate resistive switching in silver nanoparticle films [PDF]
Science and Technology of Advanced Materials, 2015 Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications.
Eric J Sandouk +2 more
doaj +2 more sources
Optoelectronic Switching Memory Based on ZnO Nanoparticle/Polymer Nanocomposites [PDF]
, 2023 Optoelectronic switching memories are emerging as practical candidates for applications of optically tunable neuromorphic computing systems and artificial vision systems.
Lowe, Chris +3 more
core +1 more source
Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold. [PDF]
Adv Sci (Weinh)Two-dimensional (2D) materials are highly promising as resistive switching materials for neuromorphic and in-memory computing owing to their fascinating properties derived from their low thickness.
Ghomi S +12 more
europepmc +2 more sources
Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Advanced Electronic Materials, 2023 Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency.
Yang Li +7 more
doaj +1 more source
Scientific Reports, 2021 TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj +1 more source
Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
openaire +1 more source
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Micromachines, 2020 In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer.
Junhyeok Choi, Sungjun Kim
doaj +1 more source
Nanomaterials, 2021 In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Sobia Ali Khan +5 more
doaj +1 more source
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source