Results 11 to 20 of about 9,065 (265)
Tuning the resistive switching in tantalum oxide-based memristors by annealing
AIP Advances, 2020 A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a ...
Yang Li +10 more
doaj +1 more source
Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
Advanced Electronic Materials, 2023 Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency.
Yang Li +7 more
doaj +1 more source
Scientific Reports, 2021 TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
doaj +1 more source
Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
openaire +1 more source
Nanomaterials, 2021 In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias ...
Sobia Ali Khan +5 more
doaj +1 more source
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Micromachines, 2020 In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer.
Junhyeok Choi, Sungjun Kim
doaj +1 more source
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic System
Advanced Materials Interfaces, 2023 To efficiently develop an extremely intensive storage memory, the resistive random‐access memory (RRAM), which operates by producing and rupturing conductive filaments, is essential.
Seyeong Yang +8 more
doaj +1 more source
Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties
Advanced Electronic Materials, 2023 Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain ...
Hongyi Dou +8 more
doaj +1 more source
Switching Power Universality in Unipolar Resistive Switching Memories [PDF]
Scientific Reports, 2016 AbstractWe investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices.
Kim, Jongmin +11 more
openaire +3 more sources
Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
AIP Advances, 2012 Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application.
Xi Zou +7 more
doaj +1 more source