Results 31 to 40 of about 9,065 (265)

Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

Scientific Reports, 2021
Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on
Christiane Ader, Andreas Falkenstein, Manfred Martin   +2 more
doaj   +1 more source

Resistive Switching in Graphene Oxide

Frontiers in Materials, 2020
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics.
Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez   +8 more
doaj   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines, 2020
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao, Ping Song, Huiling Gai, Yi Li, Chunpeng Ai, Dianzhong Wen   +5 more
doaj   +1 more source

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Advanced Electronic Materials, 2023
In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achieving high‐speed and ...
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi   +5 more
doaj   +1 more source

Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Results in Physics, 2020
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj   +1 more source

Clinical, Histopathological, and Molecular Characterization of Pediatric MN1::ZNF341‐Associated Cancer

Pediatric Blood &Cancer, EarlyView.
ABSTRACT A lethal round‐cell malignancy with an MN1::ZNF341 fusion has recently been reported in three infants. Here, we describe four further tumors, three in newborns (including monozygotic twins), and one in an adolescent. Detailed clinical, radiological, and histopathological data differentiate these tumors from their main mimics, neuroblastoma and
Thomas R. W. Oliver, Dyanne Rampling, Barbara Walkowiak, Nathaniel D. Anderson, Manas Dave, Henry Lee‐Six, Sadie Baskind, Pooja Balasubramanian, Glenn Anderson, Conor Parks, Toochi Ogbonnah, Emilia R. Robertson, Simon Hannam, Rohan Verma, John C. Achermann, Liina Palm, Neil Sebire, Thomas Jacques, Tom Watson, Carryl Dryden, Karin Straathof, Mette Jorgensen, Olga Slater, Sam Behjati, Sarita Depani, J. Ciaran Hutchinson   +25 more
wiley   +1 more source

Occurrence of Extramedullary Relapses in Pediatric Acute Lymphoblastic Leukemia After Treatment With Blinatumomab

Pediatric Blood &Cancer, EarlyView.
ABSTRACT We report a retrospective single‐center analysis of pediatric patients with relapsed or refractory B‐cell precursor acute lymphoblastic leukemia focusing on relapses outside of the typical locations, bone marrow, central nervous system, or testes.
Johanna Kunz, Martin Ebinger, Michaela Döring, Markus Mezger, Ursula Holzer, Rupert Handgretinger, Peter Lang, Manon Queudeville   +7 more
wiley   +1 more source

Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films

AIP Advances, 2015
Resistive switching oxides are investigated at great length as promising candidates for the next generation of non-volatile memories. It is generally assumed that defects have a strong impact on the resistive switching properties of transition metal ...
N. Raab, C. Bäumer, R. Dittmann
doaj   +1 more source

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

Frontiers in Nanotechnology, 2023
The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman, A. Jaman, A. S. Goossens, A. S. Goossens, J. J. L. van Rijn, L. van der Zee, T. Banerjee, T. Banerjee   +7 more
doaj   +1 more source