Results 31 to 40 of about 490,893 (298)
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
IEEE Journal of the Electron Devices Society, 2021 A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN ...
L. Begon-Lours +10 more
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CuO/ZnO memristors via oxygen or metal migration controlled by electrodes
AIP Advances, 2016 We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors.
Yong Huang +7 more
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Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold. [PDF]
Adv Sci (Weinh)Two-dimensional (2D) materials are highly promising as resistive switching materials for neuromorphic and in-memory computing owing to their fascinating properties derived from their low thickness.
Ghomi S +12 more
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Resistive switching memory device [PDF]
, 2023 Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode.
core
Insight into physics-based RRAM models – review
The Journal of Engineering, 2019 This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that ...
Arya Lekshmi Jagath +3 more
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Physical Review X, 2022 Resistive switching is of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V_{3}O_{5}, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition above ...
Coline Adda +10 more
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Results in Physics, 2019 With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li +8 more
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Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
AIP Advances, 2018 Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories ...
J. Fan +5 more
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Materials Research Express, 2020 Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail +6 more
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Scientific Reports, 2021 Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on
Christiane Ader +2 more
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