Results 31 to 40 of about 76,331 (301)

Direct Observation of the Electrically Triggered Insulator-Metal Transition in V_{3}O_{5} Far below the Transition Temperature

Physical Review X, 2022
Resistive switching is of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V_{3}O_{5}, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition above ...
Coline Adda, Min-Han Lee, Yoav Kalcheim, Pavel Salev, Rodolfo Rocco, Nicolas M. Vargas, Nareg Ghazikhanian, Chung-Pang Li, Grant Albright, Marcelo Rozenberg, Ivan K. Schuller   +10 more
doaj   +1 more source

Back-end-of-line a-SiOxCy:H dielectrics for resistive memory

AIP Advances, 2018
Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories ...
J. Fan, O. Kapur, R. Huang, S. W. King, C. H. de Groot, L. Jiang   +5 more
doaj   +1 more source

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Materials Research Express, 2020
Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail, Sobia Ali Khan, Mehr Khalid Rahmani, Junhyeok Choi, Zahida Batool, Anwar Manzoor Rana, Sungjun Kim   +6 more
doaj   +1 more source

Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

Scientific Reports, 2021
Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on
Christiane Ader, Andreas Falkenstein, Manfred Martin   +2 more
doaj   +1 more source

First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]

, 2011
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck, Besland, Besland, Cario, Chapert, Dubost, Elissalde, Goux, Huai, Huai, Kim, Liu, Mangin, Modera, Nishimura, Stadelmann, Szot, Vaju, Vaju, Waser   +19 more
core   +3 more sources

Resistive Switching in Graphene Oxide

Frontiers in Materials, 2020
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics.
Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez   +8 more
doaj   +1 more source

Shock-waves and commutation speed of memristors [PDF]

, 2016
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a ...
Dobrosavljević, V., Levy, Pablo, Marlasca, Fernando Gomez, Rozenberg, Marcelo, Tang, Shao, Tesler, Federico   +5 more
core   +3 more sources

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines, 2020
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao, Ping Song, Huiling Gai, Yi Li, Chunpeng Ai, Dianzhong Wen   +5 more
doaj   +1 more source

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Advanced Electronic Materials, 2023
In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achieving high‐speed and ...
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi   +5 more
doaj   +1 more source