Results 31 to 40 of about 18,321 (309)

Insight into physics-based RRAM models – review

The Journal of Engineering, 2019
This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that ...
Arya Lekshmi Jagath, Chee Hock Leong, T. Nandha Kumar, HaiderA.F. Almurib   +3 more
doaj   +1 more source

Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Results in Physics, 2019
With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li, Bai Sun, Wentao Hou, Jiao Chen, Pingping Zheng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Guoqiang Fu   +8 more
doaj   +1 more source

Direct Observation of the Electrically Triggered Insulator-Metal Transition in V_{3}O_{5} Far below the Transition Temperature

Physical Review X, 2022
Resistive switching is of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V_{3}O_{5}, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition above ...
Coline Adda, Min-Han Lee, Yoav Kalcheim, Pavel Salev, Rodolfo Rocco, Nicolas M. Vargas, Nareg Ghazikhanian, Chung-Pang Li, Grant Albright, Marcelo Rozenberg, Ivan K. Schuller   +10 more
doaj   +1 more source

Back-end-of-line a-SiOxCy:H dielectrics for resistive memory

AIP Advances, 2018
Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories ...
J. Fan, O. Kapur, R. Huang, S. W. King, C. H. de Groot, L. Jiang   +5 more
doaj   +1 more source

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Materials Research Express, 2020
Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail, Sobia Ali Khan, Mehr Khalid Rahmani, Junhyeok Choi, Zahida Batool, Anwar Manzoor Rana, Sungjun Kim   +6 more
doaj   +1 more source

Transition between bipolar and abnormal bipolar resistive switching in amorphous oxides with a mobility edge

Scientific Reports, 2021
Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on
Christiane Ader, Andreas Falkenstein, Manfred Martin   +2 more
doaj   +1 more source

Effect of controlled humidity on resistive switching of multilayer VO2 devices

, 2021
Resistive switching in lateral devices using vanadium oxide sheets is reported. The devices undergo an electric field induced insulator-to-metal transition (E-IMT).
Viannie, LR, Thamankar, R, Raja, V, Sonar, P, Molina-Reyes, J, Hadiyal, K, Nath, AK   +6 more
core   +1 more source

Resistive Switching in Graphene Oxide

Frontiers in Materials, 2020
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics.
Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez   +8 more
doaj   +1 more source

Resistive damping implementation as a method to improve controllability in stiff ohmic RF-MEMS switches [PDF]

, 2013
This paper presents in detail the entire procedure of calculating the bias resistance of an ohmic RF-MEMS switch, controlled under resistive damping (charge drive technique).
Nilavalan, R, Spasos, M
core   +1 more source

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source