Results 61 to 70 of about 76,331 (301)
Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature
We report an approach to design a metal-insulator-metal (MIM) structure exhibiting multilevel resistive switching. Toward this end, two oxide layers (TiO2 and Al2O3) were combined to form a bilayer structure.
N. Andreeva, A. Ivanov, A. Petrov
doaj +1 more source
Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved.
Johan Vanacken +3 more
core +1 more source
Noise on resistive switching: a Fokker–Planck approach [PDF]
We study the effect of internal and external noise on the phenomenon of resistive switching. We consider a non-harmonic external driving signal and provide a theoretical framework to explain the observed behavior in terms of the related Fokker–Planck ...
Fierens, Pablo Ignacio +2 more
core +2 more sources
Structural biology of ferritin nanocages
Ferritin is a conserved iron‐storage protein that sequesters iron as a ferric mineral core within a nanocage, protecting cells from oxidative damage and maintaining iron homeostasis. This review discusses ferritin biology, structure, and function, and highlights recent cryo‐EM studies revealing mechanisms of ferritinophagy, cellular iron uptake, and ...
Eloise Mastrangelo, Flavio Di Pisa
wiley +1 more source
A mechanism for unipolar resistance switching in oxide non-volatile memory devices
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures.
Baek I. G. +4 more
core +1 more source
Resistive‐switching and current‐conduction mechanisms in F8BT polymer resistive switch
Poly[(9,9‐di‐n‐octylfluorenyl‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,8‐diyl)] (F8BT) polymer has been investigated to elucidate the resistive‐switching properties in a sandwiched structure of indium tin oxide (ITO)/F8BT/aluminium (Al). An active layer of F8BT polymer was deposited on the ITO‐coated polyethylene terepthalate through spin coating ...
Muhammad N. Awais +5 more
openaire +1 more source
Hyperosmotic stress induces PARP1‐mediated HPF1‐dependent mono(ADP‐ribosyl)ation
Sorbitol‐induced hyperosmotic stress rapidly induces reversible mono(ADP‐ribosyl)ation (MARylation) on PARP1 without the signs of genotoxic signaling. We show that PARP1 autoMARylation is HPF1 dependent and forms hydroxylamine‐resistant O‐glycosidic linkages.
Anna Georgina Kopasz +11 more
wiley +1 more source
Stochastic Memristive Devices for Computing and Neuromorphic Applications
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems.
Choi, Shinhyun +4 more
core +1 more source
Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer [PDF]
This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers.
B. R. Mehta +5 more
core +1 more source
Aldehyde dehydrogenase 1A1 (ALDH1A1) is a cancer stem cell marker in several malignancies. We established a novel epithelial cell line from rectal adenocarcinoma with unique overexpression of this enzyme. Genetic attenuation of ALDH1A1 led to increased invasive capacity and metastatic potential, the inhibition of proliferation activity, and ultimately ...
Martina Poturnajova +25 more
wiley +1 more source

