Transverse barrier formation by electrical triggering of a metal-to-insulator transition
Resistive switching usually occurs by the formation of conducting filaments in the direction of current flow. Here the authors study an intriguing type of volatile metal-to-insulator resistive switching in (La,Sr)MnO3, which occurs by the formation of an
Pavel Salev +8 more
doaj +1 more source
Resistive switching in nanogap systems on SiO2 substrates
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further
Chen +29 more
core +1 more source
Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices [PDF]
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated.
Bard A. J. +5 more
core +1 more source
Hippo pathway at the crossroads of stemness and therapeutic resistance in breast cancer
Dysregulation of the Hippo pathway drives nuclear accumulation of YAP/TAZ, activating stemness‐related transcriptional programs that sustain breast cancer stemness and fuel therapeutic resistance across subtypes, underscoring Hippo signaling as a targetable vulnerability. Figure created and edited with BioRender.com.
Giulia Schiavoni +11 more
wiley +1 more source
A new opportunity for the emerging tellurium semiconductor: making resistive switching devices
Resistive switching devices have great promise for a wide variety of technological applications. Here, Yang et al demonstrate that electrochemically induced tellurium filament can give rise to resistive switching, and show that devices based on this can ...
Yifei Yang +16 more
doaj +1 more source
Exploring the energy landscape of resistive switching in antiferromagnetic Sr(3)Ir(2)O(7)
We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition.
Cao, Gang +5 more
core +1 more source
Digital signal propagation delay in a nano-circuit containing reactive and resistive elements [PDF]
The transient switching delay in a micro/nano-scale circuit containing resistive and reactive elements are sternly affected by the surge in the resistance arising from sub-linear current-voltage (I-V) characteristics limited by the velocity and current ...
Arora, Vijay Kumar +2 more
core +1 more source
E2A selectively regulates TGF‐β–induced apoptosis in KRAS‐mutant non‐small cell lung cancer
Ability to induce apoptosis by TGF‐β is frequently lost in advanced lung adenocarcinoma despite intact TGF‐β signaling. We identify E2A as a mutant KRAS–dependent mediator of resistance to TGF‐β–induced apoptosis. TGF‐β induces E2A via SMAD3 in mutant KRAS cells, and E2A silencing restores apoptosis and enhances radiation response in cell lines ...
Sergei Chuikov +3 more
wiley +1 more source
We analyze cisplatin–DNA adducts (CDAs) and double‐strand breaks (DSBs) in a cell‐cycle‐dependent manner. We find that CDAs form similarly across all cell cycle phases. DSBs arise only in S‐phase. CDAs might not directly impair DSB repair, but S‐phase DSB lesions evolve in the presence of CDAs and disrupt repair in G2, also causing radiosensitization ...
Ye Qiu +10 more
wiley +1 more source
Control of rectifying and resistive switching behavior in BiFeO3 thin films
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition using Au as the top electrode. The resistive switching property of the Au/BiFeO3/Pt stack has been significantly improved by carefully tuning the oxygen pressure ...
Bürger, Danilo +8 more
core +1 more source

