Results 81 to 90 of about 18,321 (309)

Ion transport-related resistive switching in film sandwich structures

, 2014
Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years. To utilize the resistive switching memories for high-performance information storage applications, a thorough understanding
Liu, Gang, Shang, Jie, Zhu, Xiao-Jian, Li, Run-Wei   +3 more
core  

INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES

, 2011
Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM).
SHENG-YU WANG, TSEUNG-YUEN TSENG
core   +1 more source

Hippo pathway at the crossroads of stemness and therapeutic resistance in breast cancer

Molecular Oncology, EarlyView.
Dysregulation of the Hippo pathway drives nuclear accumulation of YAP/TAZ, activating stemness‐related transcriptional programs that sustain breast cancer stemness and fuel therapeutic resistance across subtypes, underscoring Hippo signaling as a targetable vulnerability. Figure created and edited with BioRender.com.
Giulia Schiavoni, Antonella Palmese, Stefano Scalera, Laura Cipriani, Davide Mascolo, Patrizia Vici, Teresa Arcuri, Lorena Filomeno, Eriseld Krasniqi, Giovanni Blandino, Giulia Bon, Marcello Maugeri‐Saccà   +11 more
wiley   +1 more source

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays

Scientific Reports, 2017
In this study, the resistive switching scheme using TiO2 nanorod arrays synthesized by a large-scale and low-cost hydrothermal process was reported. Especially, the nonlinear I–V characteristics of TiO2 nanorod arrays with a nonlinearity of up to ~10 ...
Chi-Hsin Huang, Ta-Shun Chou, Jian-Shiou Huang, Shih-Ming Lin, Yu-Lun Chueh   +4 more
doaj   +1 more source

Unipolar resistive switching and mechanism in Gd-doped-TiO2-based resistive switching memory devices

, 2011
Gd-doped-TiO2-based resistive switching random-access memory (RRAM) devices with MOM structure of top metal electrode (W, Ti)/Gd-doped-TiO2/Pt/Ti/SiO2/Si were fabricated, and resistive switching characteristics were investigated.
Liu, L. F., X Zhang, Y Wang, J F Kang, Kang, J. F., Zhang, X., D D Han, Han, D. D., Liu, X. Y., L F Liu, Y S Chen, Wang, Y., X Y Liu, Chen, Y. S.   +13 more
core   +1 more source

E2A selectively regulates TGF‐β–induced apoptosis in KRAS‐mutant non‐small cell lung cancer

Molecular Oncology, EarlyView.
Ability to induce apoptosis by TGF‐β is frequently lost in advanced lung adenocarcinoma despite intact TGF‐β signaling. We identify E2A as a mutant KRAS–dependent mediator of resistance to TGF‐β–induced apoptosis. TGF‐β induces E2A via SMAD3 in mutant KRAS cells, and E2A silencing restores apoptosis and enhances radiation response in cell lines ...
Sergei Chuikov, Shiva Krishna Katkam, Zhefan Wang, Venkateshwar G. Keshamouni   +3 more
wiley   +1 more source

Gate-sizing-based single Vdd test for bridge defects in multi-voltage designs

, 2010
The use of multiple voltage settings for dynamic power management is an effective design technique. Recent research has shown that testing for resistive bridging faults in such designs requires more than one voltage setting for 100% fault coverage ...
Harrod, Peter, Harrod, P, Khursheed, Syed Saqib, Saqib Khursheed, Bashir M. Al-Hashimi, Chakrabarty, Krishnendu, Krishnendu Chakrabarty, Al-Hashimi, Bashir, Chakrabarty, K, Al-Hashimi, BM, Khursheed, S, Peter Harrod   +11 more
core   +1 more source

Studying the switching variability in redox-based resistive switching devices

, 2020
The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and ...
Jungemann, Christoph, Abbaspour, E., Jungemann, C., Menzel, Stephan, Abbaspour, Elhameh   +4 more
core   +1 more source

Cell‐cycle‐specific lesion evolution rather than inhibition of double‐strand‐break repair underpins cisplatin radiosensitization

Molecular Oncology, EarlyView.
We analyze cisplatin–DNA adducts (CDAs) and double‐strand breaks (DSBs) in a cell‐cycle‐dependent manner. We find that CDAs form similarly across all cell cycle phases. DSBs arise only in S‐phase. CDAs might not directly impair DSB repair, but S‐phase DSB lesions evolve in the presence of CDAs and disrupt repair in G2, also causing radiosensitization ...
Ye Qiu, Xixi Lin, Emil Mladenov, Veronika Mladenova, Jürgen Thomale, Ali Sak, Yao Wang, Yunxuan Deng, Eleni Gkika, Martin Stuschke, George Iliakis   +10 more
wiley   +1 more source

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Advanced Science, 2018
Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through ...
Xing Wu, Kaihao Yu, Dongkyu Cha, Michel Bosman, Nagarajan Raghavan, Xixiang Zhang, Kun Li, Qi Liu, Litao Sun, Kinleong Pey   +9 more
doaj   +1 more source