Results 101 to 110 of about 76,331 (301)

Electroforming Free Controlled Bipolar Resistive Switching in Al/CoFe2O4/FTO device with Self-Compliance Effect

, 2018
Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and
Khare, Neeraj, Munjal, Sandeep
core   +1 more source

A Robust Adaptive One‐Sample‐Ahead Preview Super‐Twisting Sliding Mode Controller

International Journal of Adaptive Control and Signal Processing, EarlyView.
Block Diagram of the Robust Adaptive One‐Sample‐Ahead Preview Super‐Twisting Sliding Mode Controller. ABSTRACT This article introduces a discrete‐time robust adaptive one‐sample‐ahead preview super‐twisting sliding mode controller. A stability analysis of the controller by Lyapunov criteria is developed to demonstrate its robustness in handling both ...
Guilherme Vieira Hollweg, Paulo Jefferson Dias de Oliveira Evald, Shivam Chaturvedi, Hilton Abilio Gründling, Rodrigo Varella Tambara, Wencong Su   +5 more
wiley   +1 more source

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Carboxylic‐Acid Functionalized Multiwalled Carbon Nanotube‐Alkane‐Based Resistive Temperature Sensor for Cold Chain Applications

Advanced Engineering Materials, EarlyView.
This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera, Philippe Marrec, A. Jorge Parola, Madalena Dionísio, Hugo Águas, Andreia F. M. Santos, Hamed Pourkheirollah, Donald Lupo, César A. T. Laia   +8 more
wiley   +1 more source

Effects of Sm₂O₃ and V₂O₅ Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen   +2 more
doaj   +1 more source

Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor

Acta Physica Sinica, 2018
Resistance random access memory is regarded as one of the most promising candidates for the future nonvolatile memory applications due to its good endurance, high storage density, fast erase speed and low power consumption. As one of the most important transition-metal oxides, the anatase TiO2 has received intense attention due to its inexpensive cost,
null Yu Zhi-Qiang, null Liu Min-Li, null Lang Jian-Xun, null Qian Kai, null Zhang Chang-Hua   +4 more
openaire   +1 more source

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

Advanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham, Chenyu Wen, Mohammad Hadi Khaksaran, Won‐Yong Lee, Javier Cruz, Klas Hjort, Dongping Wu, Shi‐Li Zhang   +7 more
wiley   +1 more source

Resistive Switching in Nanodevices

, 2015
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized
Raebiger, Hannes, Padilha, Antonio Claudio M., Rocha, Alexandre R., Dalpian, Gustavo M.   +3 more
openaire   +2 more sources

Handbook of Establishing and Maintaining Oxygen‐Free Atmospheres

Advanced Engineering Materials, EarlyView.
This study presents a practical framework for creating oxygen‐free atmospheres at ambient pressure using silane‐doped inert gases. The results show that ultra‐low oxygen levels and strongly reduced water content can be achieved through controlled silane dosing, drying systems, and sensor monitoring.
Sascha Jan Zimmermann, René Gustus, Lienhard Wegewitz, Wolfgang Maus‐Friedrichs   +3 more
wiley   +1 more source

Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory

Scientific Reports, 2017
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom, Banseok You, Karam Cho, Hyun Young Jung, Junsu Park, Changhwan Shin, Byeong-Kwon Ju, Jong-Woong Kim   +7 more
doaj   +1 more source