Results 101 to 110 of about 18,321 (309)
Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin +2 more
doaj +1 more source
Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor
Resistance random access memory is regarded as one of the most promising candidates for the future nonvolatile memory applications due to its good endurance, high storage density, fast erase speed and low power consumption. As one of the most important transition-metal oxides, the anatase TiO2 has received intense attention due to its inexpensive cost,
null Yu Zhi-Qiang +4 more
openaire +1 more source
Nanoscale resistive switching memory devices: a review
In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms.
Slesazeck, Stefan, Mikolajick, Thomas
core +1 more source
Tumor B‐cell infiltration in platinum‐treated advanced muscle‐invasive urothelial carcinoma
Bladder tumors with higher pretreatment memory B‐cell infiltration were linked to longer survival after cisplatin chemotherapy, but not carboplatin. These tumors also showed more organized immune structures (tertiary lymphoid structures) and a shared pro‐inflammatory B‐cell‐rich community, suggesting that memory B cells may help identify patients most ...
Konrad Stawiski +10 more
wiley +1 more source
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom +7 more
doaj +1 more source
Resistive Switching in Nanodevices
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized
Raebiger, Hannes +3 more
openaire +2 more sources
Weakening the nuclear envelope: Lamin B receptor in melanoma metastasis
LBR‐driven nuclear fragility supports melanoma invasion. A: Melanocyte presents low LBR (Lamin B Receptor) levels, maintaining nuclear integrity and lamina‐chromatin tethering. B: During malignant progression, upregulation of LBR clusters at the INM (Inner Nuclear Membrane) during confined migration causes local lamina weakening and cholesterol ...
Francesca Lorenzini +1 more
wiley +1 more source
Single‐cell multi‐omics reveals epigenetic heterogeneity across therapy‐adaptive tumor states, including quiescent/dormant, drug‐tolerant persister, and EMT‐like phenotypes. By linking regulatory features with state‐associated biomarkers, these approaches inform biomarker‐guided therapeutic strategies for evolving tumors.
Hee Jung Kim +3 more
wiley +1 more source
Mathematical Modeling of Bipolar Resistive Switching Mechanism
Recently, transition metal oxide materials showing bipolar resistive switching have attracted deep interest. These materials have an application as resistive random access memory (RRAM) which shows advantages over capacitance based RAMs and even other ...
Manasi H. Kulkarni (7977113)
core
Bipolar resistive switching in different plant and animal proteins
We report bipolar resistive switching phenomena observed in different types of plant and animal proteins. Using protein as the switching medium, resistive switching devices have been fabricated with conducting indium tin oxide (ITO) and Al as bottom and ...
M. K. Hota +7 more
core +1 more source

